• Title/Summary/Keyword: selenium(Se)

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Characterization of the a-Se Film for Phosphor based X-ray light Modulator (형광체 기반 X선 광 변조기를 위한 비정질 셀레늄 필름 특성)

  • Kang, Sang-Sik;Park, Ji-Koon;Cho, Sung-Ho;Cha, Byung-Youl;Shin, Jung-Wook;Lee, Kun-Hwan;Mun, Chi-Woong;Nam, Sang-Hee
    • Journal of Biomedical Engineering Research
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    • v.28 no.2
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    • pp.306-309
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    • 2007
  • PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

EFFECTS OF VITAMIN E AND SELENIUM SUPPLEMENTATION TO DIETS CONTAINING AFLATOXIN B1 ON THE CONTENTS OF LIVER LIPIDS AND VARIOUS BLOOD PARAMETERS IN RATS

  • Choi, Y.K.;Jung, K.K.;Chae, K.Y.;Jang, I.;Lee, B.D.;Nahm, K.H.
    • Asian-Australasian Journal of Animal Sciences
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    • v.8 no.4
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    • pp.379-385
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    • 1995
  • Ninety Wistar male rats were used to study the effects of vitamin E and Se supplementation to diets containing aflatoxin $B_1$ on the contents of liver lipids and various blood parameters. Two levels of dietary aflatoxin (0 and 1 ppm), 3 levels of vitamin E (30, 60 and 120 IU/kg), and 3 levels of Se (0.1, 1 and 2 ppm) were used to design a $2{\times}3{\times}3$ factorial experiment. Rats, weighing about 200 g, were randomly allotted to 18 cages, 5 rats per cage. The aflatoxin significantly (p < .05) decreased growth rate, feed intake and feed efficiency. Aflatoxin increased the glucose level and decreased the cholesterol level in blood significantly. Levels of blood triglyceride, total protein, and albumin were not affected by aflatoxin, vitamin E or Se. Activities of blood alanine aminotransferase (ALT) and aspartate aminotransferase (AST) were significantly increased by aflatoxin; however, the glutathione peroxidase (GSH-Px) activity in the blood was decreased by aflatoxin even in the presence of Se. The vitamin E supplementation decreased the AST activity significantly, while GSH-Px activity increased significantly as the levels of dietary Se increased. The levels of total cholesterol and free cholesterol in the liver were significantly lower in rats receiving aflatoxin, while the extra vitamin E supplementation increased these hepatic cholesterol levels. It was concluded that the extra dietary vitamin E or Se supplementation might partially alleviate some of the harmful effects of aflatoxin in rats.

Development of Surface Cleaning Techniques for Analysis of Electronics Structure in CuInSe2, CuGaSe2 Solar Cell Absorber Layer (태양전지용CuInSe2와 CuGaSe2 흡수층의 전자구조해석을 위한 표면 청정기술 개발)

  • Kim, Kyung-Hwan;Choi, Hyung-Wook;Kong, Sok-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.125-129
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    • 2005
  • Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

Uptake of Some Toxic Elements by Wild Plants in Siwaqa Area/Central Jordan

  • Bzour, Asma Fayyad;Khoury, Hani Nicola;Oran, Sawsan Attalah
    • Applied Microscopy
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    • v.47 no.3
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    • pp.148-156
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    • 2017
  • The wide distribution of redox-sensitive elements (RSE) as arsenic (As), cadmium (Cd), selenium (Se), and strontium (Sr) in the top soil of Siwaqa area are related to the weathering action of alkaline surface and groundwater on the parent rocks. The bioavailability, distribution, sorption, and ecotoxicity of As, Cd, Se, and Sr, of the wild plants and top soils in the study area were investigated. A total number of 23 surface soil samples and 23 plant samples were collected and analyzed for the most toxic elements. The uptake of elements by plants was dependent on the plant species and the concentration of elements in the soil. For example, Sr was the highest concentration in soil samples and plants, while Se was the lowest concentration in soil samples and pants. For the plants, the results showed that Bellevalia sp. had the highest elements uptake, while Allium rothii had the lowest elements uptake. The results of this work provide a valuable knowledge for understanding the bioavailability of some toxic elements in the soil and plants of Central Jordan. The results are expected to be of great help for the Jordanian Uranium Mining Company during their environmental risk assessments.

Time of Fight Resonace Investigation of Amorphous Selenium Films (비정질 셀레늄 필름의 공명 비행시간 조사)

  • Park, J.K.;Park, S.K.;Lee, D.G.;Choi, J.Y.;Ahn, S.H.;Eun, C.K.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.501-504
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    • 2001
  • We used time-of-flight method to analyze transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-flight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 400 ${\mu}m$ thickness on coming glass using thermoevaporation method and built Au electrode with 300nm, $2{\varphi}$ on both sides of a-Se, As a result of this experiment, electron and hole transit time was each $229.17{\mu}s$ and $8.73{\mu}s$ at $10V/{\mu}m$ electric field and Drift mobility was each $0.00174 cm^{2}/V{\cdot}s$, $0.04584cm^{2}/V{\cdot}s$.

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Transport Properties of Conversion Materials for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.250-254
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    • 2007
  • Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

Time of Flight Resonace Investigation of Amorphous Selenium Films (비정질 셀레늄 필름의 공명 비행시간 조사)

  • 박지군;박성광;이동길;최장용;안상호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.501-504
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    • 2001
  • We used time-of-flight method to analyse transport properties of charge carrier which is produced by X-ray exposure. It is the research of charge transport and specific property of trap that is performed in direct digital x-ray image receptor. But the results shows us different measurement value of electron and charge drift mobility and it is difficult to precise analysis about charge transport properties and trap mechanism. We measured transit time and drift mobility of charge carriers using time-of-fight method to evaluate the correlation of a-Se thickness change and electric field. We made a testing glass with a-Se of 470 ${\mu}{\textrm}{m}$ thickness on corning glass using thermoevaporation method and built Au electrode with 300nm, 2$\phi$ on both sides of a-Se. As a result of this experiment, electron and hole transit time was each 229.17 $\mu$s and 8.737 $\mu$s at 10V/${\mu}{\textrm}{m}$ electric field and Drift mobility was each 0.00174 $\textrm{cm}^2$/V.s, 0.04584 $\textrm{cm}^2$/V.s.

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Effects of Selenium and Vitamin E Supplementation on Meat Quality and Shelf-Life in Finishing Pigs (Selenium과 비타민 E의 급여가 비육돈의 육질 특성 및 저장성에 미치는 영향)

  • Kim H.J.;Park J.C.;Chen Y.J.;Yoo J.S.;Lee S.J.;Kim I.C.;Kim Y.H.;Jung H.J.;Park B.C.;Kim I.H.
    • Food Science of Animal Resources
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    • v.26 no.2
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    • pp.197-203
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    • 2006
  • This study was conducted to investigate the effect of seleium (Se) and vitamin E supplementation on meat quality and shelf-life in finishing pigs. A total of eighty ($Landrace{\times}Yorkshire{\times}Duroc$) pigs (74.74 initial BW) were randomly allocated into five treatments with four replications and fed for six weeks. Dietary treatments included 1) CON (basal diet), 2) ISE2 (basal diet+0.2 ppm inorganic Se+100 ppm vitamin E), 3) ISE4 (basal diet+0.4 ppm inorganic Se+100 ppm vitamin E), 4) OSE2 (basal diet+0.2 ppm organic Se+100 ppm vitamin E) and 5) OSE4 (basal diet+0.4 ppm organic Se+100 ppm vitamin E). Cooking loss was decreased in treatment of ISE4 as compared with treatment of CON (p<0.05). Crude fat (%) of OSE2 was higher than those of others (p<0.05). Redness ($a^*$- value) of M. longissimus dorsi was increased in treatment of OSE2 as compared with other treatments after 100 of storage (p<0.05). Thiobarbituric acid reactive substances (TBARS) was decreased in treatment of OSE4 compared with treatments of CON and ISE2 after 10d of storage (p<0.05). In conclusion, Se and vitamin E combination did not significantly affect cooking loss,$a^*$- value and TBARS except for cases.

Evaluation of Kinetic Parameters and Thermal Stability of Melt-Quenched BixSe100-x Alloys (x≤7.5 at%) by Non-Isothermal Thermogravimetric Analysis

  • Ahmad, Mais Jamil A.;Abdul-Gader Jafar, Mousa M.;Saleh, Mahmoud H.;Shehadeh, Khawla M.;Telfah, Ahmad;Ziq, Khalil A.;Hergenroder, Roland
    • Applied Microscopy
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    • v.47 no.3
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    • pp.110-120
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    • 2017
  • Non-isothermal thermogravimetry (TG) measurements on melt-quenched $Bi_xSe_{100-x}$ specimens (x=0, 2.5, 7.5 at%) were made at a heating rate ${\beta}=10^{\circ}C/min$ in the range $T=35^{\circ}C{\sim}950^{\circ}C$. The as-measured TG curves confirm that $Bi_xSe_{100-x}$ samples were thermally stable with minor loss at $T{\leq}400^{\circ}C$ and mass loss starts to decrease up to $600^{\circ}C$, beyond which trivial mass loss was observed. These TG curves were used to estimate molar (Se/Bi)-ratios of $Bi_xSe_{100-x}$ samples, which were not in accordance with initial composition. Shaping features of conversion curves ${\alpha}(T)-T$ of $Bi_xSe_{100-x}$ samples combined with a reliable flow chart were used to reduce kinetic mechanisms that would have caused their thermal mass loss to few nth-order reaction models of the form $f[{\alpha}(T)]{\propto}[1-{\alpha}(T)]^n$ (n=1/2, 2/3, and 1). The constructed ${\alpha}(T)-T$ and $(d{\alpha}(T)/dT)-T$ curves were analyzed using Coats-Redfern (CR) and Achar-Brindley-Sharp (ABS) kinetic formulas on basis of these model functions, but the linearity of attained plots were good in a limited ${\alpha}(T)-region$. The applicability of CR and ABS methods, with model function of kinetic reaction mechanism R0 (n=0), was notable as they gave best linear fits over much broader ${\alpha}(T)-range$.

The Response Characteristics of as Addition Ratio of Arsenic in $CaWO_4/a-Se$ based X-ray Conversion Sensor ($CaWO_4/a-Se$ 구조의 X선 변환센서에서 a-Se의 Arsenic 첨가량에 따른 반응 특성)

  • Kang, Sang-Sik;Suk, Dae-Woo;Cho, Sung-Ho;Kim, Jae-Hyung;Nam, Namg-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.416-419
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    • 2002
  • There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

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