• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.438-444
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• 2017

In this work, the effects of hydrogen reduction on the microstructure and thermoelectric properties of $(GeTe)_{0.85}(AgSbTe_2)_{0.15}$ (TAGS-85) were studied by a combination of gas atomization and spark plasma sintering. The crystal structure and microstructure of TAGS-85 were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The oxygen content of both powders and bulk samples were found to decrease with increasing reduction temperature. The grain size gradually increased with increasing reduction temperature due to adhesion of fine grains in a temperature range of 350 to $450^{\circ}C$. The electrical resistivity was found to increase with reduction temperature due to a decrease in carrier concentration. The Seebeck coefficient decreased with increasing reduction temperature and was in good agreement with the carrier concentration and carrier mobility. The maximum power factor, $3.3{\times}10^{-3}W/mK^2$, was measured for the non-reduction bulk TAGS-85 at $450^{\circ}C$.

• Applied Microscopy
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• v.47 no.3
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

• Journal of IKEEE
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• v.20 no.2
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• pp.174-176
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• 2016

In this study, we maximize the temperature difference between the ends of a HgTe nanoparticle(NP) thin film on a thermoelectric platform with a through-substrate via. The thermoelectric characteristics of the HgTe NP thin film show p-type behavior and its Seebeck coefficient is $290{\mu}V/K$. In addition, we demonstrate the possibility of wearable thermoelectric devices transforming body heat into electricity from through-substrate via thermoelectric platforms on human skin.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.71-76
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• 2004

The power consumption of TEC for Laser diode cooling was predicted by 3-D FEM simulation and verified by experiment. The operating conditions such as power consumption of Laser diode, set temperature, ambient temperature, resistance of thermal path was considered to estimate the TEC power consumption. Using 3-D FEM simulation, the relation between TEC configuration defined by the pellet dimension and the number and power consumption was investigated for low power consumption scheme. As a result, as the thermal resistance of the pellet increased, the power consumption decreased.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.10
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• pp.60-67
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• 2006

This paper presents the temperature control in aluminum plate with Peltier module. From the experimental work, Peltier module is used to control the temperature of small aluminum plate for both heating and cooling with the control of current and fan ON/OFF. And current control of Peltier module was accomplished by PWM method. As a result of experiments, it is proper that operate cooling fan only while cooling duration and there exist a proper cooling current to drop temperature rapidly. It takes about 125sec to control temperature of aluminium plate between $30^{\circ}C$ and $70^{\circ}C$ and about 70sec between $40^{\circ}C$ and $60^{\circ}C$, in ambient temperature $28^{\circ}C{\sim}29^{\circ}C$ while cooling fan is operated only cooling duration. With the cooling current, temperature control of aluminum plate was accomplished more rapidly in comparison without cooling current. Future aim is to realize more rapid temperature control and develop SMHA(special metal hydride actuator) by using Peltier module as a heating and cooling source.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1333-1340
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• 2002

The objective of this study is to develop a thermoelectric generation system which converts unused energy from close-at-hand sources such as garbage incineration heat and industrial exhaust etc. into electricity. This paper presents applicability of a commercially available thermoelectric generator f3r waster heat recovery. The test facility consists of water heater, pump, thermoelectric module and aluminium tubes and hot and cold water is used as heat source and sink fluids. It is shown that the three components of thermoelectric research exist in manufacturing a thermoelectric generator. The first component is fabrication of thermoelectric materials, the second is manufacturing of thermoelectric generator with 32 thermoelectric modules. The last one is characteristic measuring of thermoelectric generator with 32 thermoelectric modules of two types, cooling and power purpose. It was found that the rate of cold and hot water is 25 and 37 liter per minute and the maximum power of thermoelectric generator is 28Watts and its efficiency is 1.04%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.661-661
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• 2013

열전재료는 열-전기가 상호 가역적으로 변하는 재료로서, 에너지 변환소재 분야에서 널리 각광받고 있다. 열전재료의 성능은 무차원 열전성능지수(dimensionless figure of merit, $ZT={\alpha}^2{\sigma}T/{\kappa}$)로 평가된다. 여기서 ${\alpha}$는 제벡계수(Seebeck coefficient), ${\sigma}$는 전기전도도(electrical conductivity), ${\kappa}$는 열전도도(thermal conductivity), T는 Kelvin 온도를 나타낸다. 500 K에서 800 K까지의 중온 영역에서 우수한 열전특성을 보이는 $Mg_2X$ (X=Si, Ge, Sn)와 이들의 고용체는 성분원소가 독성이 없고, 매장량이 많아 친환경 열전재료로 각광받고 있다. $Mg_2X$ 고용체 중 $Mg_2Si-Mg_2Sn$ 고용체는 Si와 Sn의 큰 원자량 차이로 인해 낮은 열전도도와 높은 성능지수(ZT)를 얻을 것이라 예상되며 열전발전 소자로서의 응용이 기대된다. Sb가 도핑된 $Mg_{2+x}Si_{0.7}Sn_{0.3}Sb_y$ (x=0, 0.1, 0.2, y=0, 0.01) 고용체를 고상합성과 기계적 합금화로 합성한 후, 진공 열간압축 성형을 통해 성공적으로 제조하였다. X선 회절분석으로 상합성과 고용체 형성 여부를 확인하였고, Mg의 과잉첨가와 Sb 도핑에 따른 열전특성의 변화를 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.143-144
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• 2006

Thermoelectric properties of $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ clathrates were investigated in the temperature range between 323K and 923K. Both clathrates were fabricated by the arc-melting method. Homogeneous single phases were observed in the annealed clathrates. Electrical resistivities for both clathrates were increased as the temperature increased up to 823K. The sign of the Seebeck coefficients for both clathrates was negative, which means that the major carriers were electrons. The maximum values of ZT for $Sr_8Ga_{16}Ge_{30}$ and $Ba_8Ga_{16}Ge_{30}$ were 0.86 at 773K and 0.76 at 923K, respectively.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.292-296
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• 2006

Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of $300{\sim}400^{\circ}C$ were carried out during 10 minutes under the reducing atmosphere (Ar with 10% $H_2$). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of $Bi_2Te_3$ films. Recrystallization of $Bi_2Te_3$ phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at $400^{\circ}C$ (about $-128{\mu}V/K$ and $9{\times}10^{-4}\;W/K^2m$, respectively). With further higher temperature ($500^{\circ}C$), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.