• Mass Spectrometry Letters
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• v.11 no.4
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• pp.65-70
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• 2020

Despite its great success in the field of proteomics, mass spectrometry has limited use for determining structural details of peptides, proteins, and their assemblies. Emerging ion mobility spectrometry-mass spectrometry has enabled us to explore the conformational space of protein ions in the gas phase, and further combinations with the gas-phase ion spectroscopy and the collision-induced unfolding have extended its abilities to elucidating the secondary structure and local details of conformational transitions. This review will provide a brief introduction to the combined approaches of IMS-MS with gas-phase ion infrared spectroscopy or collision-induced unfolding and their most recent results that successfully revealed higher-order structural details.

• The Journal of Korean Academy of Prosthodontics
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• v.33 no.2
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• pp.354-357
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• 1995

The secondary ion of titanium from commercially pur titanium implant which installed at Rabbit tibia. Was analyzed by Secondary lon Mass Spectroscopy. And we detected about 3476 ppm ion from $10-50{\mu}m$ distance from interface.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.328-334
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• 2001

The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.55-60
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• 2001

The effect of high energy B ion implantation and initial oxygen concentration upon defect formation and gettering of metallic impurities in Czochralski silicon wafer has been studied by applying DLTS( Deep Level Transient Spectroscopy), SIMS(Secondary ton Mass Spectroscopy), BMD (Bulk Micro-Defect) analysis and TEM(Transmission Electron Microscopy). DLTS results show the signal of the deep levels not only in as-implanted samples but also in low and high temperature annealed samples. Vacancy-related deep levels in as- implanted samples were changed to metallic impurities-related deep levels with increase of annealing temperature. In the case of high temperature anneal, by showing the lower deep level concentration with increase of initial oxygen concentration, high initial oxygen concentration seems to be more effective compared with the lower initial oxygen one.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.91-94
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• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.497-502
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• 2015

The hardenability of boron steel specimens with different molybdenum and chromium contents was investigated using dilatometry and microstructural observations, and then was quantitatively measured at a critical cooling rate corresponding to 90 % martensite hardness obtained from a hardness distribution plotted as a function of cooling rate. Based on the results, the effect of an austenitizing temperature on the hardenability and tensile properties was discussed in terms of segregation and precipitation behavior of boron atoms at austenite grain boundaries. The molybdenum addition completely suppressed the formation of pro-eutectoid ferrite even at the slowest cooling rate of $0.2^{\circ}C/s$, while the chromium addition did at the cooling rates above $3^{\circ}C/s$. On the other hand, the hardenability of the molybdenum-added boron steel specimens decreased with an increasing austenitizing temperature. This is associated with the preferred precipitation of boron atoms since a considerable number of boron atoms could be concentrated along austenite grain boundaries by a non-equilibrium segregation mechanism. The secondary ion mass spectroscopy results showed that boron atoms were mostly segregated at austenite grain boundaries without noticeable precipitation at higher austenitization temperatures, while they formed as precipitates at lower austenitization temperatures, particularly in the molybdenum-added boron steel specimens.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.555-561
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• 2013

The hardenability of low-carbon boron steels with different molybdenum and chromium contents was investigated using dilatometry, microstructural observations and secondary ion mass spectroscopy (SIMS), and then discussed in terms of the segregation and precipitation behaviors of boron. The hardenability was quantitatively evaluated by a critical cooling rate obtained from the hardness distribution plotted as a function of cooling rate. It was found that the molybdenum addition was more effective than the chromium addition to increase the hardenability of boron steels, in contrast to boron-free steels. The addition of 0.2 wt.% molybdenum completely suppressed the formation of eutectoid ferrite, even at the slow cooling rate of $0.2^{\circ}C/s$, while the addition of 0.5 wt.% chromium did this at cooling rates above $3^{\circ}C/s$. The SIMS analysis results to observe the boron distribution at the austenite grain boundaries confirmed that the addition of 0.2 wt.% molybdenum effectively increased the hardenability of boron steels, as the boron atoms were significantly segregated to the austenite grain boundaries without the precipitation of borocarbide, thus retarding the austenite-to-ferrite transformation compared to the addition of 0.5 wt.% chromium. On the other hand, the synergistic effect of molybdenum and boron on the hardenability of boron steels could be explained from thermodynamic and kinetic perspectives.