• Title/Summary/Keyword: secondary ion mass

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Determination of Copper in Uniformly-Doped Silicon Thin Films by Isotope-Dilution Inductively Coupled Plasma Mass Spectrometry

  • Park, Chang;Cha, Myeong;Lee, Dong
    • Bulletin of the Korean Chemical Society
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    • v.22 no.2
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    • pp.205-209
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    • 2001
  • Uniformly-doped silicon thin films were fabricated by ion beam sputter deposition. The thin films had four levels of copper dopant concentration ranging between 1 ${\times}$1019 and 1 ${\times}$ 1021 atoms/cm3 . Concentrations of Copper dopants were determined by the isotope dilution inductively coupled plasma mass spectrometry (ICP-MS) to provide certified reference data for the quantitative surface analysis by secondary ion mass spectrometry (SIMS). The copper-doped thin films were dissolved in a mixture of 1 M HF and 3 M HNO3 spiked with appropriate amounts of 65 Cu. For an accurate isotope ratio determination, both the detector dead time and the mass discrimination were appropriately corrected and isobaric interference from SiAr molecular ions was avoided by a careful sample pretreatment. An analyte recovery efficiency was obtained for the Cu spiked samples to evaluate accuracy of the method. Uncertainty of the determined copper concentrations, estimated following the EURACHEM Guide, was less than 4%, and detection limit of this method was 5.58 ${\times}$ 1016 atoms/cm3.

Application of multimodal surfaces using amorphous silicon (a-Si) thin film for secondary ion mass spectrometry (SIMS) and laser desorption/ionization mass spectrometry (LDI-MS)

  • Kim, Shin Hye;Lee, Tae Geol;Yoon, Sohee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.384.1-384.1
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    • 2016
  • We reported that amorphous silicon (a-Si) thin film provide sample plate exhibiting a multimodality to measure biomolecules by secondary ion mass spectrometry (SIMS) and laser desorption/ionization mass spectrometry (LDI-MS). Kim et al.1 reported that a-Si thin film were suitable to detect small molecules such as drugs and peptides by SIMS and LDI-MS. Recently, bacterial identification has been required in many fields such as food analysis, veterinary science, ecology, agriculture, and so on.2 Mass spectrometry is emerging for identifying and profiling microbiology samples from its advantageous characters of label-free and shot-time analysis. Five species of bacteria - S. aureus, G. glutamicum, B. kurstaki, B. sphaericus, and B. licheniformis - were sampled for MS analysis without lipid extraction in sample preparation steps. The samples were loaded onto the a-Si thin film with a thickness of 100 nm which did not only considered laser-beam penetration but also surface homogeneity. Mass spectra were recorded in both positive and negative ionization modes for more analytical information. High reproducibility and sensitivity of mass spectra were demonstrated in a mass range up to mass-to-charge ratio(m/z) 1200 by applying the a-Si thin film in mentioned above MS. Principle component analysis (PCA) - a popular statistical analysis widely used in data processing was employed to differentiate between five bacterial species. The PCA results verified that each bacterial species were readily distinguished and differentiated effectively from our MS approach. It shows a new opportunity to rapid bacterial profiling and identification in clinical microbiology. More details will be discussed in the presentation.

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Surface Mass Imaging Technique for Nano-Surface Analysis

  • Lee, Tae Geol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.113-114
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    • 2013
  • Time-of-flight secondary ion mass spectrometry (TOF-SIMS) imaging is a powerful technique for producing chemical images of small biomolecules (ex. metabolites, lipids, peptides) "as received" because of its high molecular specificity, high surface sensitivity, and submicron spatial resolution. In addition, matrix-assisted laser desorption and ionization time-of-flight (MALDI-TOF) imaging is an essential technique for producing chemical images of large biomolecules (ex. genes and proteins). For this talk, we will show that label-free mass imaging technique can be a platform technology for biomedical studies such as early detection/diagnostics, accurate histologic diagnosis, prediction of clinical outcome, stem cell therapy, biosensors, nanomedicine and drug screening [1-7].

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Cutting Characteristics of Plasma Source Son Implanted Tungsten Carbide Tool (플라즈마 이온주입에 의해 표면 개질한 초경공구의 가공특성)

  • Kang, Seong-Ki;Wang, Duck-Hyun;Kim, Won-Il
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.1
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    • pp.33-40
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    • 2010
  • In this research, the effects for surface Improvement of plasma ion implanted carbide endmill tools were observed by measuring cutting forces and tools wear affecting surface roughness in high speed cutting. From the 2nd ion mass analysis, the oxidation layer was found to be built up by sputtering. The residual gas contamination of oxygen was found to be contained impurities in nitrogen gas. The plasma implanted ion was found to be spreaded, especially the nitrogen was implanted up to 150nm depth as impressed voltage and ion implanting time. It is analyzed as bring surface improvement by spreading deeply forming oxidation on surface. The factors in Analysis of Variance(ANOVA) about mutuality cause reference of cutting force. The cutting force Fx is affected by the interaction of spindle rpm and federate, the cutting force Fy is influenced by spindle rpm and time injected ion, and cutting force Fz is affected by the interaction of impressed voltage and feedrate. Also, it was found that the cutting forces of implanted tools become lower and the surface roughness is improved by the effect of nitrogen according to the implantation.

Study on Electrical Activation of As Ion Implanted Si(100) (As 이온이 주입된 단결정 실리콘(100)의 전기적 활성화 연구)

  • 이동건;문영희;손정식;손정식;김동렬;배인호;김말문;한병국;정광화
    • Journal of the Korean Vacuum Society
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    • v.4 no.1
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    • pp.104-108
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    • 1995
  • Hall 효과 측정을 이용하여 As+이 주입된 다결정 실리콘의 열처리 조건에 따른 활성화 과정을 연구하였다. 주입된 이온의 농도 분포는 SIMS(Secondary Ion Mass Spectroscopy)와 SUPREMIV 모의 실험으로 조사하였다. 열처리 온도가 증가함에 따라 활성층의 전자 면 농도 증가가 뚜렷이 나타났으며, Hall 이동도의 온도 의존성 측정으로 주입된 도우즈에 따라 이온 주입층의 활성화에 필요한 열처리 온도가 달라져야함을 알 수 있었다. 그리고, 접합 손실전류의 감소는 $800^{\circ}C$(30분)의 열처리에서 현저하게 나타났다.

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The Detection of Molecular Ion $CsX^+$(X=Al, Ga, As) for Quantitative SIMS Analysis ($CsX^+$(X=Al, Ga, As) 분자이온을 이용한 SIMS의 정량분석)

  • 김차연;김선미;김성태;지종열
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.121-125
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    • 1992
  • Secondary Ion Mass Spectrometry (SIMS) is widely known as highly sensitive a surface analysis technique. Efforts for quantification have been hindered, however, by the presence of matrix effects. Here we describe a new technique for the quantitative analysis of AlxGa1-xAs. Instead of Al+, Ga+, As+ ions, CsX+ ions (X=Al, Ga, As) have been detected. Intensity of these molecular ions appears to be much less affected by matrix effects. We have successfully accomplished the compositional analysis with standard deviation better than 2 percent.

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Monte Carlo Simulation of Ion Implantation Profiles Calibrated for Various Ions over Wide Energy Range

  • Suzuki, Kunihiro;Tada, Yoko;Kataoka, Yuji;Nagayama, Tsutomu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.1
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    • pp.67-74
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    • 2009
  • Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.

Local Thermal Equilibrium 모델에 의한 이차이온 질량분석의 정량화 방법

  • Gwak, Byeong-Hwa;Gwon, O-Jun
    • ETRI Journal
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    • v.10 no.2
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    • pp.63-69
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    • 1988
  • SIMS(Secondary Ion Mass Spectrometry) 분석 데이터의 정량화 방법으로 이온주입에 의한 실험적 접근법과 LTE(Local Thermal Equilibrium) 모델을 사용한 준이론적 접근법 2가지가 주로 논의되고 있다. 본 고에서는 LTE 모델을 사용, SIMS data를 정량화하는 방법에 대하여 기술하였으며 아울러 BASIC language로 된 간단한 LTE 프로그램을 제시하였다.

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