• Mass Spectrometry Letters
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• v.7 no.2
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• pp.41-44
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• 2016

Secondary ion mass spectrometry (SIMS) is a promising tool to measure isotope ratios of individual uranium particles in environmental samples for nuclear safeguards. However, the analysis requires prior identification of a small number of uranium particles that coexist with a large number of other particles without uranium. In the present study, this identification was performed by scanning electron microscopy - energy dispersive X-ray analysis with automated particle search mode. The analytical results for an environmental sample taken at a nuclear facility indicated that the observation of backscattered electron images with × 1000 magnification was appropriate to efficiently identify uranium particles. Lower magnification (less than × 500) made it difficult to detect smaller particles of approximately 1 μm diameter. After identification, each particle was manipulated and transferred for subsequent isotope ratio analysis by SIMS. Consequently, the isotope ratios of individual uranium particles were successfully determined without any molecular ion interference. It was demonstrated that the proposed technique provides a powerful tool to measure individual particles not only for nuclear safeguards but also for environmental sciences.

• Journal of Microbiology and Biotechnology
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• v.23 no.7
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• pp.932-941
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• 2013

This work aimed to classify Aspergillus (8 species, 28 strains) by using a secondary metabolite profile-based chemotaxonomic classification technique. Secondary metabolites were analyzed by liquid chromatography ion-trap mass spectrometry (LC-IT-MS) and multivariate statistical analysis. Most strains were generally well separated from each section. A. lentulus was discriminated from the other seven species (A. fumigatus, A. fennelliae, A. niger, A. kawachii, A. flavus, A. oryzae, and A. sojae) with partial least-squares discriminate analysis (PLS-DA) with five discriminate metabolites, including 4,6-dihydroxymellein, fumigatin, 5,8-dihydroxy-9-octadecenoic acid, cyclopiazonic acid, and neosartorin. Among them, neosartorin was identified as an A. lentulus-specific compound that showed anticancer activity, as well as antibacterial effects on Staphylococcus epidermidis. This study showed that metabolite-based chemotaxonomic classification is an effective tool for the classification of Aspergillus spp. with species-specific activity.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Bulletin of the Korean Chemical Society
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• v.22 no.5
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• pp.481-487
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• 2001

Surface films formed prior to bulk reduction of lithium have been studied at gold, platinum, and copper electrodes in rigorously dried propylene carbonate solutions using electrochemical quartz crystal microbalance (EQCM) and secondary ion mass spectrometry experiments. The results indicate that the passive film formation takes place at a potential as positive as about 2.0 V vs. Li/Li+ , and the passive film thus formed in this potential region is thicker than a monolayer. Quantitative analysis of the EQCM results indicates that electrogenerated lithium reacts with solvent molecules to produce a passive film consisting of lithium carbonate and other compounds of larger molecular weights. The presence of lithium carbonate is verified by SIMS, whereas the lithium compounds of low molecular weights, including lithium hydroxide and oxide, are not detected. Further lithium reduction takes place underneath the passive film at potentials lower than 1.2 V with a voltammetric current peak at about 0.6 V.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Analytical Science and Technology
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• v.10 no.5
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• pp.1087-1104
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.159-159
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.168-168
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• 1996

• Journal of environmental and Sanitary engineering
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• v.20 no.4 s.58
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• pp.9-20
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• 2005

The purpose of the study was characteristics of secondary pollutants of $PM_{10}$ collected in pocheon between August 2002 and June 2003. The ambient concentrations of $PM_{10}$ mass, 9 water-soluble anions and cations, and 13 bulk composition trace elements were determined from filter samples collected by $PM_{10}$ high volume air sampler(UV-15H, Graseby-Anderson Co., USA). During this period average $PM_{10}$ mass concentration was $83.8{\mu}g/m^3(49.8{\mu}g/m^3\~111.6{\mu}g/m^3)$ in Pocheon. Mechanism for transformation of secondary pollutants by soluble ion components is divided into two categories; $NaNO_3$ type by the reaction of sea salt and $HNO_3$ in the atmosphere, and nitrate salt or phosphate salt type such as $(NH_4)_2SO_4,\;NH_4NaSO_4,\;and\;(NH_4)_2SO_4(2NH_4O_3)$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.