• Korean Journal of Materials Research
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• v.1 no.2
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• pp.99-104
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• 1991

Trantalum thin films have been prepared by DC sputtering onto As, P, and $BF_2$-implanted ($5{\times}10^15cm^-2$) poly-silicon. The heat treatments by rapid thermal annealing(RTA) have been applied to these samples for the formation of silicides. We have studied the application possibility of Ta-silicide as gate electrode and bit line. The silicide formation and the dopant diffusion after the heat treatment were investigated by various methods, such as four-point probe, X-ray, SEM cross sectional views, ${\alpha}$-step, and SIMS, The tantalum disilicide($TaSi_2$) are formed in the temperature above $800^{\circ}C$, and grown in colummar structure. $TaSi_2$ has a good surface roughness, having range from $80{\AA}\;to\;120{\AA}$, and implanted dopants are incoporated into the $TaSi_2$ layer during the RTA temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.190-191
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• 2006

We have investigated optical properties of Si/graded-$Si_{1-x}Ge_x$/Si heterostructures grown by reduced pressure chemical vapor deposition. Compared to standard condition using Si(100) substrate and growth temperature of $650^{\circ}C$, Si(111) resulted in low growth rate and high Ge mole fraction. Also samples grown at higher temperatures exhibited increased growth rate and reduced Ge mole fraction. The features regarding both substrate temperature and crystal orientation, representing high incorporation of silicon supplied from gas stream played as a key parameter, illustrate that reaction control were prevailed in this process growth condition. Using secondary ion mass spectroscopy and spectroscopic ellipsometry, microscopic changes in atomic components could be analyzed for Si/graded-$Si_{1-x}Ge_x$/Si heterostructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.397-397
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• 2010

Bone is considered as hierarchically organized biocomposites of organic (collagen) and inorganic (hydroxyapatite) materials. The precise structural dependence between hydroxyapatite (HAp, $Ca_{10}(PO_4)_6(OH)_2)$ crystals and collagen fibril is critical to unique characteristics of bone. To meet those conditions and obtain optimal properties, it is essential to understand and control the initial growth mechanisms of hydroxyapatite at the molecular level, such as other nano-structured materials. In this study, collagen fibrils were prepared by adsorbing native type I collagen molecules onto hydrophobic surface. Hydrophobicity was introduced on the Si wafer surface by using PECVD (plasma enhanced chemical vapor deposition) method and cyclohexane as a precursor. Biomimetic nucleation and growth of HAp on the self-assembled collagen nanofibrils were occurred through incubation of the sample in SBF (simulated body fluid). Chemical and morphological evolution of HAp nanocrystals was investigated by surface-sensitive analytical techniques such as ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) and AFM (Atomic Force Microscopy) in the early growth stages (< 24 hrs). The very initial stages (< 12 hrs) of mineralization could be clearly demonstrated by ToF-SIMS chemical mapping of surface. In addition to ToF-SIMS and AFM measurement, scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction analysis were conducted to characterize the HAp layer in the late stages. This study is of great importance in the growth of real bone-like materials with a structure analogous to that of natural bones and the development of biomimetic nanomaterials.

• Nuclear Engineering and Technology
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• v.53 no.5
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• pp.1569-1579
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• 2021

This study aims to provide microstructural characterization for the matrix graphite which molten salt reactors (MSRs) use, and improve resistance to molten salt infiltration of the matrix graphite for fuel elements. Mesocarbon microbeads (MCMB) densified matrix graphite A3-3 (MDG) was prepared by a quasi-isostatic pressure process. After densification by MCMBs with average particle sizes of 2, 10, and 16 ㎛, the pore diameter of A3-3 decreased from 924 nm to 484 nm, 532 nm, and 778 nm, respectively. Through scanning electron microscopy, the cross-section energy spectrum and time-of-flight secondary ion mass spectrometry, resistance levels of the matrix graphite to molten salt infiltration were analyzed. The results demonstrate that adding a certain proportion of MCMB powders can improve the anti-infiltration ability of A3-3. Meanwhile, the closer the particle size of MCMB is to the pore diameter of A3-3, the smaller the average pore diameter of MDG and the greater the densification. As a matrix graphite of fuel elements in MSR was involved, the thermal and mechanical properties of matrix graphite MDG were also studied. When densified by the MCMB matrix graphite, MDGs can meet the molten salt anti-infiltration requirements for MSR operation.

• Journal of the Korean Society for Geothermal and Hydrothermal Energy
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• v.18 no.3
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• pp.7-18
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• 2022

Secondary batteries used in electric vehicles have a potential risk of ignition and explosion. Various safety measures are being taken to prevent these risks. A numerical study was performed using a computational fluid dynamics code on the cases where pressure relief vents that can reduce the blast overpressures of batteries were installed in the through-compression test room, short-circuit drop test room, combustion test room, and immersion test room in facilities rleated to battery used in electric vehicles. This study was conducted using the weight of TNT equivalent to the energy release from the battery, where the the thermal runaway energy was set to 324,000 kJ for the capacity of the lithium-ion battery was 90 kWh and the state of charge (SOC) of the battery of 100%. The explosion energy of TNT (△H_TNT) generally has a range of 4,437 to 4,765 kJ/kg, and a value of 4,500 kJ/kg was thus used in this study. The dimensionless explosion efficiency coefficient was defined as 15% assuming the most unfavorable condition, and the TNT equivalent mass was calculated to be 11 kg. The internal explosion generated in a test room shows the very complex propagation behavior of blast waves. The shock wave generated after the explosion creates reflected shock waves on all inner surfaces. If the internally reflected shock waves are not effectively released to the outside, the overpressures inside are increased or maintained due to the continuous reflection and superposition from the inside for a long time. Blast simulations for internal explosion targeting four test rooms with pressure relief vents installed were herein conducted. It was found that that the maximum blast overpressure of 34.69 bar occurred on the rear wall of the immersion test room, and the smallest blast overpressure was calculated to be 3.58 bar on the side wall of the short-circuit drop test room.

• Journal of the Korean Electrochemical Society
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• v.25 no.1
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• pp.32-41
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• 2022

Various steps in the electrode production process, such as slurry mixing, slurry coating, drying, and calendaring, directly affect the quality and, consequently, mechanical properties and electrochemical performance of electrodes. Herein, a new method of slurry coating is developed: Double-coated electrode. Contrary to single-coated electrode, the cathode is prepared by double coating, wherein each coat is of half the total loading mass of the single-coated electrode. Each coat is dried and calendared. It is found that the double-coated electrode possesses more uniform pore distribution and higher electrode density and allows lesser extent of particle segregation than the single-coated electrode. Consequently, the double-coated electrode exhibits higher adhesion strength (74.7 N m^-1) than the single-coated electrode (57.8 N m^-1). Moreover, the double-coated electrode exhibits lower electric resistance (0.152 Ω cm^-2) than the single-coated electrode (0.177 Ω cm^-2). Compared to the single-coated electrode, the double-coated electrode displays higher electrochemical performance by exhibiting better rate capability, especially at higher C rates, and higher long-term cycling performance. Despite its simplicity, the proposed method allows effective electrode preparation by facilitating high electrochemical performance and is applicable for the large-scale production of high-energy-density electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.101-105
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• 2024

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the D_it.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.