• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.105.1-105.1
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• 2016

Many of the complex materials developed today derive their unique properties from the presence of multiple phases or from local variations in elemental concentration. Simply performing analysis of the bulk materials is not sufficient to achieve a true understanding of their physical and chemical natures. Secondary ion mass spectrometer (SIMS) has met with a great deal of success in material characterization. The basis of SIMS is the use of a focused ion beam to erode sample atoms from the selected region. The atoms undergo a charge exchange with their local environment, resulting in their conversion to positive and negative secondary ions. The mass spectrometric analysis of these secondary ions is a robust method capable of identifying elemental distribution from hydrogen to uranium with detectability of the parts per million (ppm) or parts per billion (ppb) in atomic range. Nano secondary ion mass spectrometer (Nano SIMS, Cameca Nano-SIMS 50) equipped with the reactive ion such as a cesium gun and duoplasmatron gun has a spatial resolution of 50 nm which is much smaller than other SIMS. Therefore, Nano SIMS is a very valuable tool to map the spatial distribution of elements on the surface of various materials In this talk, the surface imaging applications of Nano SIMS in KBSI will be presented.

• Mass Spectrometry Letters
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• 제14권4호
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• pp.147-152
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• 2023

The increasing demand for two-dimensional imaging analysis using optical or electronic microscopic techniques has led to an increase in the use of simple one-dimensional and two-dimensional mass spectrometry imaging. Among these imaging methods, secondary-ion mass spectrometry (SIMS) has the best spatial resolution using a primary ion beam with a relatively insignificant beam diameter. Until recently, SIMS, which uses high-energy primary ion beams, has not been used to analyze molecules. However, owing to the development of cluster ion beams, it has been actively used to analyze various organic molecules from the surface. Researchers and commercial SIMS companies are developing cluster ion beams to analyze biological samples, including amino acids, peptides, and proteins. In this study, a water droplet ion beam for surface analysis was realized. Water droplets ions were generated via electrospraying in a vacuum without desolvation. The generated ions were accelerated at an energy of 10 keV and collided with the target sample, and secondary ion mass spectra were obtained for the generated ions using ToF-SIMS. Thus, the proposed water droplet ion-beam device showed potential applicability as a primary ion beam in SIMS.

• 세라미스트
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• 제22권4호
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• pp.357-367
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• 2019

Secondary Ion Mass Spectrometry(SIMS) is an analytical method that measures the distribution and concentration of elements or compounds by analyzing the mass of secondary ions released by irradiating ion beams with energy of hundreds eV to 20 keV on the sample surface. Unlike other similar analytical instruments, SIMS directly detect the elemental ions that constitute a sample, allowing you to accurately identify components and obtain concentration information in the depth direction. It is also a great feature for measuring isotopes and analyzing light elements, especially hydrogen. In particular, with the development of materials science, there is an increasing demand for trace concentration analysis and isotope measurements in the micro-regions of various materials. SIMS has a short history compared to other similar methods; nevertheless, SIMS is still advancing in hardware and is expected to contribute to the development of materials science through research and development of advanced analytical techniques.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• 한국진공학회지
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• 제13권1호
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• pp.22-28
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• 2004

본 논문은 탄탈 박막의 증착시 음의 기판 바이어스에 의한 탄탈 박막내의 불순물 농도변화에 대해서 고찰하였다. 탄탈 박막은 실리콘 기판 위에 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -125 V의 기판 바이어스를 건 상태에서 증착하였다. 탄탈 박막내의 불순물 농도를 관찰하기 위해서 이차이온 질량분석기(secondary ion mass spectrometry)를 이용하였다. 세슘 클러스터 이온에 의한 깊이분석에서, -125 V의 기판 바이어스를 걸어줌으로써 산소, 탄소, 그리고 실리콘 불순물의 농도가 기판 바이어스를 걸지 않은 경우에 비해 상당히 감소한 것을 알 수 있었다. 또한, 세슘 이온빔과 산소 이온빔을 이용한 전체 불순물의 농도분포에서도, 음의 기판 바이어스가 박막 증착시 각각의 불순물 농도에 영향을 준다는 결과를 얻었고 이에 대한 고찰을 하였다.

• 한국진공학회지
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• 제13권2호
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• pp.79-85
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• 2004

본 논문은 구리와 탄탈 박막내에 불순물로써 함유되기 쉬운 수소와 탄소, 그리고 산소 원소에 대해 이차이온 질량분석기(secondary ion mass spectrometry)와 글로우방전 질량분석기(glow discharge mass spectrometry)를 이용하여 분석하였고, 이들의 분석결과에 대해서 고찰하였다. 구리와 탄탈 박막은 실리콘 기판 위에 비질량 분리형 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -50 V(구리 박막) 또는 -125 V(탄탈 박막)의 기판바이어스를 걸은 상태에서 증착하였다. 세슘 이온빔을 이용하여 분석한 SIMS 결과에서, 기판 바이어스를 걸지 않은 경우, 상당히 많은 피크들이 강하게 관찰되었는데 이는 위의 주요불순물들의 결합에 의한 상태로 검출된 것으로 이들 주요불순물들의 조합에 의해 가능한 질량번호를 산출하여 SIMS 결과의 모든 피크들을 해석할 수 있었다. 또한, 박막 내의 주요불순물들의 정량적인 GDMS 분석에 의해 SIMS 결과와의 일치성을 확인할 수 있었다.

• 분석과학
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• 제8권4호
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• pp.715-722
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• 1995

The structural characterization for series of polyesters has been done by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Polymer fragments and intact oligomers composed of large numbers of repeat units have been investigated. Transesterification of polyesters in trifluoroacetic acid (TFA) and chlorodifluoroacetic acid (CFA) was monitored and reaction products were identified using TOF-SIMS. The shapes and intensities of clusters in transesterification spectra show good agreement with the theoretical isotope pattern. TOF-SIMS spectra were used to obtain information about the progress of the transesterification reaction.

• 한국표면공학회지
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• 제29권6호
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• pp.880-883
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• 1996

Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

• Mass Spectrometry Letters
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• 제11권4호
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• pp.65-70
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• 2020

Despite its great success in the field of proteomics, mass spectrometry has limited use for determining structural details of peptides, proteins, and their assemblies. Emerging ion mobility spectrometry-mass spectrometry has enabled us to explore the conformational space of protein ions in the gas phase, and further combinations with the gas-phase ion spectroscopy and the collision-induced unfolding have extended its abilities to elucidating the secondary structure and local details of conformational transitions. This review will provide a brief introduction to the combined approaches of IMS-MS with gas-phase ion infrared spectroscopy or collision-induced unfolding and their most recent results that successfully revealed higher-order structural details.

• 암석학회지
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• 제10권3호
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• pp.222-232
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• 2001

이차이온질량분석기는 고속으로 가속된 일차이온을 고체 시료 표면에 충돌시켜, 이차이온을 발생시킨 후 질량분석 장치를 통해 분석하는 장치이다. 시료에 충돌하는 일차이온빔의 크기를 마이크론 단위까지 줄여 미세영역에 대한 분석이 가능하므로 이온현미분석기라고도 불린다. 이차이온질량분석기의 정밀도와 정확도는 고전적인 질량분석기에 비해 떨어진다. 하지만, 극소량의 시료로 분석이 가능하며, 화학적 전처리 과정 없이 연마편을 이용하여 매우 좁은 영역에서 동위원소의 분포를 연구할 수 있다는 장점이 있다. 지구화학/우주화학 분야에서 이차이온질량분석기의 활용은 최근 급속히 증가하고 있으며, 주로 (1) 수소, 탄소, 산소, 황 등의 안정동위원소 연구, (2) 함 우라늄/토륨 광물의 절대연령측정, (3) 광물 내 미량원소의 분포 연구, (4) 선태양계 광물 발견 및 이들의 동위원소 연구 등에 사용되고 있다.