• Title/Summary/Keyword: second magnetization peak

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The vortex dynamics in $Bi_2$$Sr_2$Ca$Cu_2$$O_8$single crystals unirradiated and with low-density columnar defect (저밀도 원통형 결함이 $Bi_2Sr_2CaCu_2O_8$ 단결정의 볼텍스 동역학에 미치는 영향)

  • Lee, T.W.;Lee, C.W.;Shim, S.Y.;Ha, D.H.;Kim, D.H.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.36-40
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    • 2001
  • We have studied vortex dynamics in$ Bi_2$$Sr_2$$CaCu_2$O$_{8}$single crystals of unirradiated and irradiated samples by using 100 $\times$ $100\mu\textrm{m}^2$Hall sensor. Doses equivalent magnetic fields are 20 G, 100 G and 1 kG. In the magnetization measurement, a second magnetization peak (SMP) was observed in unirradiated, 20 G dose and 100 G dose samples in contrast to 1 kG dose sample. In the unirradiated sample, the SMP was observed in the range of 18 K ~ 35 K and the amplitude of the SMP decreased with increasing temperature. With increase of the irradiation dose, temperature region and sharpness of the SMP were reduced. In the magnetic relaxation measurement, we observed that the normalized relaxation rate S decreased with increasing the irradiation dose. Our results suggest that the vortex dynamics is not greatly affected by low-density columnar defects.s.

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Thickness Dependence of Microwave Permeability in CoFeHfO Thin Films (CoFeHfO 박막 재료의 두께에 따른 마이크로파 투자율 특성)

  • Lee, Young-Suk;Kim, Cheol-Gi;Kim, Dong-Young
    • Journal of the Korean Magnetics Society
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    • v.20 no.6
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    • pp.228-233
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    • 2010
  • The microwave permeability was measured in order to analyze the thickness dependence of loss properties in CoFeHfO thin films with varying thickness of t = 57~1368 nm. A single resonance peak (P1) at 2.95 GHz was appeared in the samples with thickness less than 405 nm, while second resonance peak (P2) at 547MHz was additionally appeared in the samples with thickness greater than 405 nm. The P2 was originated by the angle distribution of the easy axis, which was confirmed from the measured results of the change of imaginary permeability with applied magnetic field in the sample of 1368 nm thickness and low field torque curves. If the second peaks can be reduced by minimizing the angle distribution of the easy axis, the CoFeHfO thin films with thickness greater than 400 nm can be used for the compact microwave devices operated at up to 2 GHz ranges.