• Title/Summary/Keyword: scribing

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Analysis of Characteristics of Half-Cut Solar Cells According to the NDC Process for High-Power Modules (고출력 모듈을 위한 NDC 공정에 따른 Half-Cut 태양전지의 특성 분석)

  • Guemhee Ham;Jeahyeong Lee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.6
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    • pp.637-643
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    • 2024
  • One method to increase the output of solar modules is the application of the Half-cut technique, which requires a scribing process involving direct irradiation of infrared lasers on the solar cells. During this process, the laser melts the surface of the solar cells at high temperatures, enabling mechanical division, but this can lead to output loss due to thermal degradation caused by the laser. To minimize such losses, a low-temperature and low-loss division method has been devised. In this study, we compared the electrical characteristics and leakage currents affecting output degradation between the newly devised low-temperature and low-loss cell division method and the conventional laser division method. Additionally, we conducted a 3-point flexural test to evaluate the mechanical properties of both methods.

Query Slipping Prevention for Trajectory-based Contents Publishing and Subscribing in Wireless Sensor Networks (무선 센서 네트워크에서의 궤도 기반 콘텐츠 발간 및 구독을 위한 질의 이탈 방지)

  • Tscha, Yeong-Hwan
    • Journal of KIISE:Information Networking
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    • v.32 no.4
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    • pp.525-534
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    • 2005
  • This paper is concerned with the query slipping and its prevention for trajectory-based matchmaking service in wireless sensor networks. The problem happens when a query propagating along a subscribe trajectory moves through a publish trajectory without obtaining desired information, even though two trajectories intersect geometrically. There follows resubmission of the query or initiation of another subscribe trajectory Thus, query slipping results in considerable time delay and in the worst, looping in the trajectory or query flooding the network. We address the problem formally and suggest a solution. First, the area where nodes are distributed is logically partitioned into smaller grids, and a grid-based multicast next-hop selection algorithm is proposed. Our algorithm not only attempts to make the trajectory straight but also considers the nodal density of recipient nodes and the seamless grid-by-grid multicast. We prove that the publishing and subscribing using the algorithm eventually eliminate the possibility of the slipping. It toms out that our algorithm dissipates significantly less power of neighbor nodes, compared to the non grid-based method, as greedy forwarding, and the fixed- sized grid approach, as GAF (Geographical Adaptive Fidelity)

A Study on the Sintering of Diamond Composite at Low Temperature Under Low Pressure and its Subsequent Conductive PVD Process for a Cutting Tool (절삭 공구용 다이아몬드 복합체의 저온 저압 소결 합성 및 후속 도전형 박막 공정 특성 연구)

  • Cho, Min-Young;Ban, Kap-Soo
    • Journal of the Korean Society of Industry Convergence
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    • v.23 no.1
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    • pp.25-32
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    • 2020
  • Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH4 and H2 gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

Progress in R&D of coated conductor in M-PACC project

  • Izumi, T.;Ibi, A.;Nakaoka, K.;Taneda, T.;Yoshida, T.;Takagi, Y.;Nakamura, T.;Machi, T.;Katayama, K.;Sakai, N.;Yoshizumi, M.;Koizumi, T.;Kimura, K.;Kato, T.;Kiss, T.;Shiohara, Y.
    • Progress in Superconductivity and Cryogenics
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    • v.16 no.2
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    • pp.1-6
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    • 2014
  • The five-year national project in Japan for R&D of coated conductors and applications, named as the Materials and Power Applications of Coated Conductors (M-PACC) project, was finished at the end of FY2013. The project consists of four sub-themes as cable, transformer, SMES and coated conductors. In the theme of coated conductors, the fabrication process had been developed to satisfy the requirements from the applications such as in-field $I_c$ performance, low AC loss in the long tapes etc. Through the project, the remarkable progress was achieved as follows; a high in-field minimum $I_c$ value over 54A/cm-width under 3T at 77K was realized in a 200m long EuBCO tape with artificial pinning centers of $BaHfO_3$ by the pulsed laser deposition (PLD) technique on the IBAD template. On the other hand, the AC loss reduction was confirmed in the tapes fabricated by both PLD and the metal organic deposition (MOD) techniques by scribing 100m tapes into 10-filamments. Additionally, the mechanism of the delamination phenomenon was systematically investigated and the strength was improved by eliminating the origins of the weak points in the films. Through the development, all targeted goals were accomplished and the several results were appreciated as a world champion data.

Study on Shingled String Interconnection for High Power Solar Module (고출력 슁글드 태양광 모듈 제작을 위한 스트링 연결에 관한 연구)

  • Kim, Juhwi;Kim, Junghoon;Jeong, Chaehwan;Choi, Wonyoung;Lee, Jaehyeong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.6
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    • pp.449-453
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    • 2021
  • Interest and investment in renewable energy have increased worldwide, highlighting the need for renewable energy. Solar energy was the most promising energy of all renewable energy sources, and it has the highest investment value. Because photovoltaics require a certain amount of area for installation, high density and high output performance are required. Shingled module is a promising technology in that they are featured by higher density and higher output compared to the conventional modules. Shingled technology uses a laser scribing to divide solar cells that are to be bonded with electrically conductive adhesive (ECA) to produce and connect strings, which has a higher output in the same area than the conventional modules. In the process of producing solar modules, metal ribbons are used to interconnect cells, but they are also needed for string connections in shingled solar cells. Accordingly, in this study, we researched the interconnection that best suits the connector that joins the string to the string. The module outputs produced under the conditions of the string interconnection were compared and analyzed.

The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method (선택성장영역 크기에 따른 InGaN/GaN 다중양자우물 청색 MOCVD-발광다이오드 소자의 특성)

  • Bae, Seon-Min;Jeon, Hun-Soo;Lee, Gang-Seok;Jung, Se-Gyo;Yoon, Wi-Il;Kim, Kyoung-Hwa;Yang, Min;Yi, Sam-Nyung;Ahn, Hyung-Soo;Kim, Suck-Whan;Yu, Young-Moon;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.5-10
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    • 2012
  • In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.