• Title/Summary/Keyword: screen thickness

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.579-580
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) Precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately 60fm. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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The fabrication of electrodes with low resistance and fine pattern for PDP

  • Cho, Soo-Je;Ryu, Byung-Gil;Park, Myung-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.107-108
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    • 2000
  • We propose the method which is possible to fabricate the electrodes with the fine pattern and low resistance by photolithography and electroplating. The widths of pattern fabricated were 30, 50, 70 and 100um and the thickness could be up to $10{\mu}m$. The resistivity of the copper electrode electroplated was below $2.0{\mu}{\Omega}$ cm which is about half of photosensitive silver electrode. Dielectric layer was coated on the electrodes by screen printing and the pores harmful to the discharge were not formed after heat treatment. In the viewpoint of resistance and patterning, this method has much higher potential for large area display than other methods like screen printing, photosensitive conductive paste method and sputtering.

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.1245-1246
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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Structural properties of PZT multilayer thick films of improved densification (PZT 후막의 치밀성 향상에 따른 PZT 다층 후막의 구조적 특성)

  • Yun, Sang-Eun;Lee, Sung-Gap;Park, Sang-Man;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1705-1706
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    • 2006
  • Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

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The Structural properties of PZT ceramic with preparation coating timing (코팅횟수에 따른 PZT세라믹의 구조적 특성)

  • Kang, Jeong-Min;Lee, Hyun-Moo;Lee, Sung-gap;Bae, Seon-Gi
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.64-66
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    • 2004
  • $Pb(Zr_{0.3},Ti_{0.7})O_3$, $Pb(Zr_{0.3},Ti_{0.3})O_3$ powders were prepared by the sol-gel method and PZT heterolayered thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ration were studied. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around $864^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The PZT heterolayered thick film sintered at $1050^{\circ}C$ for 10min showed the average grain size $1{\sim}1.4{\mu}m$. The average thickness of PZT heterolayered thick films, obained by $3{\sim}6times$ of screen-printing, was approximately $60{\sim}110{\mu}m$.

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The electric properties of PZT thick film by pressure variation (프레스 압력 변화에 따른 PZT 후막의 전기적 특성)

  • Kang, Jeong-Min;Cho, Hyun-Moo;Lee, Sung-Gap;Lee, Sang-Heon;Park, Sang-Man
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.177-179
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    • 2004
  • $Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

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Dielectric Properties of $Pb(Zr_xTi_{1-x})O_3$ Heterolayered Thick Films with Variation of Sintering Conditions (소결조건에 따른 $Pb(Zr_xTi_{1-x})O_3$ 이종층 후막의 유전특성)

  • Lee, Sung-Gap;Lee, Jong-Deok;Park, Sang-Man
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.359-360
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    • 2005
  • PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the excess PbO. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80{\mu}m$.

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Efficiency Analysis of Spiral Structured Twist Screen (식품분말 진동선별기 개선을 위한 구조물 효율 분석)

  • Park, In-soon;Na, En-soo;Jang, Dong-soon;Paek, Young-soo
    • Food Engineering Progress
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    • v.14 no.2
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    • pp.85-91
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    • 2010
  • In the food process, twist screen is widely used to divide particles on the basis of size. As screen equipped in the twist screen perfoms an important part in the particle size distribution mechanism, the contact area of screen and particles, retention time of particles on the screen, mesh and string thickness of screen and the flow pattern of particles on the screen are major points of the separation efficiency. To improve the separation efficiency, increase the retention time and control the flow pattern of particles, screen frame dam and spiral blockage are installed on the sieve of twist screen ${\emptyset}$ 1200 and ${\emptyset}$ 1500. Twist screen ${\emptyset}$ 1500 with frame dam treated similar separation capacity, 37% higher separation ratio and less non-separated particles of product output 1 than general twist screen. Twist screens with frame dam and spiral blockage showed less treatment capacity, three times higher division ratio and entire separation than general twist screen.

Improvement of Open Circuit Voltage (OCV) depending on Thickness of GDC Electrolyte of LT-SOFCs (저온형 SOFC용 GDC 전해질 두께에 따른 Open Circuit Voltage 향상)

  • Ko, Hyun-Jun;Lee, Jong-Jin;Hyun, Sang-Hoon
    • Journal of the Korean Ceramic Society
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    • v.47 no.2
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    • pp.195-198
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    • 2010
  • It has been considered to apply GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) for low-temperature SOFC electrolytes because it has higher ionic conductivity than YSZ at low temperature. However, open circuit voltage with using GDC ($Gd_{0.1}Ce_{0.9}O_{1-X}$) electrolyte in SOFCs, becomes lower than using YSZ (8 mol% Yttria stabilized Zirconia) electrolyte because GDC has electronic conductivity. In this work, the effect of changing GDC electrolyte thickness on the open circuit voltage has been investigated. Ni-GDC anode-supported unit cells were fabricated as follows. Mixed NiO-GDC powders were pressed and pre-sintered at $1200^{\circ}C$. And then, GDC electrolyte material was dip-coated on the anode and sintered at $1400^{\circ}C$. Finally the LSCF-GDC cathode material was screen-printed on the electrolyte and sintered at $1000^{\circ}C$. Electrolyte thickness was controlled by the number of dip-coating times. Open circuit voltage was measured depending on electrolyte thickness at $650^{\circ}C$ and found that the thicker GDC electrolyte was, the better OCV was.

A Study on Powder Electroluminescent Device through Structure and Thickness Variation (구조 및 두께 변화에 따른 후막 전계발광 소자에 관한 연구)

  • Han, Sang-Mu;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1379-1381
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    • 1998
  • Powder electroluminescent device (PELD) structured conventionally dielectric and phosphor layer, between electrode and their layer fabricated by screen printing splaying or spin coating method. To promote performance of PELDs, we approached the experiments for different structure and thickness variation of PELD. Thickness variation($30{\mu}m{\sim}130{\mu}m$) was taken. To investigate electrical and optical properties of PELDs, EL spectrum, transferred charge density using Sawyer-Tower's circuit brightness was measured. Variation of structure in PELDs was as follows: WK-1 (ITO/BaTiO3/ZnS:Cu/Silver paste), WK-2 (ITO/BaTiO3/ZnS:Cu/BaTiO3/ZnS:Silver paste), WK-3 (ITO/BaTiO3/ZnS:Cu/BaTiO3/Silver paste), WK-4(ITO/BaTiO3+ZnS:Cu/Silver paste) As a result, structure of the highest brightness appeared WK-4 possessed 60 ${\mu}m$ thickness. The brightness was 2719 cd/$m^2$ at 100V, 400Hz.

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