• 한국표면공학회지
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• 제39권1호
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• pp.1-8
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• 2006

In this study, effect of sputtering after plasma nitriding and before PVD coating on the microstucture, microhardness, surface roughness and the adhesion strength of CrN thin films were investigated. Experimental results showed that this sputtering process not only removed surface compound layer which formed during a plasma nitriding process but also induced an alteration of the surface of plasma nitrided substrate in terms of microhardness distribution and surface roughness, which in turn affected the adhesion strength of PVD coatings. After sputtering, microhardness distribution showed general decrease and the surface roughness became increased slightly. The critical shear stress measured from the scratch test on the CrN coatings showed an approximately twice increase in the binding strength through the sputtering prior to the coating and this could be attributed to a complete removal of compound layer from the plasma nitrided surface and to an increase in the surface roughness after sputtering.

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• Journal of Yeungnam Medical Science
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• 제18권1호
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• pp.75-84
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• 2001

1997년 1월부터 2001년 4월까지 영남대학교 의과대학 부속병원 소아과에 이물질을 삼켜 내원한 15세 이하의 환아를 대상으로 성별 및 연령에 따른 발생빈도, 발생시간, 이물질의 크기와 종류 및 위장관내의 위치, 임상증상, 이물질에 의한 위내시경 소견, 이물질의 제거 혹은 자연 배출되기까지의 기간, 치료 방법 등을 조사 분석하였다. 성별 분포는 총 37례 중 남아가 25예(67.5%) 여아가 12예(32.5%)였으며, 남녀비는 2.1:1이였다. 연령별 분포는 1세 이상 2세 미만이 7예(19%)로 가장 많았다. 이물질을 삼킨 시간별 분포는 오후 3시와 4시경이 11예로 가장 많았으며 대부분이 오후에 발생하였다. 이물질의 종류로는 동전이 20예(54%), 손목에 끼는 팔찌자석, 바둑알, 탄력붕대를 고정하는 클립, 열쇠고리, 빨래집게에 부착된 C형의 클립이 각각 1예였다. 위장관내 이물질의 위치는 위장이 16예(43.2%)로 가장 많았으며 상부식도가 12예(32.5%), 소장이 5예(13.5%), 하부식도가 4예(10.8%)였다. 병원에 도착 당시의 임상증상은 무증상이 22예(59.4%)로 가장 많았으며, 구토가 7예(19.0%), 상복부 통증이 3예(8.1%), 오심과 연하곤란이 각각 2예(5.4%), 복통이 1예(2.7%)였다. 치료방법으로 이물질을 삼킨 총 37예 중 20예(54.0%)에서 내시경으로 이물질이 제거되었으며, 3예(8.1%)에서는 이물질의 자연 배출이 확인되었고, 수술적 제거를 시행한 경우는 없었다. 이물질을 삼킨 후 제거될 때까지의 시간은 12예(52.2%)가 12시간 이내에 제거되었으며, 4예(17.4%)가 24시간 이내에 제거되었고, 가장 긴 기간은 7일이었다. 내시경으로 이물질이 제거된 환아에서의 내시경 소견은 15예에서는 정상 소견이었으며, 5예에서 이물질에 의한 이상소견이 있었다. 상부 위장관 이물질을 제거하기 위해 내시경을 시행한 경우 안전하게 이물질을 제거할 수 있었으며 내시경을 시행함에 따른 부작용이나 합병증은 없었다. 따라서 소아에서 상부위장관 이물질의 제거에는 위내시경이 안전한 방법으로 생각되어진다.

• Tribology and Lubricants
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• 제35권6호
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• pp.330-336
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• 2019

Conditioning is a process involving pad surface scraping by a moving metallic disk that is electrodeposited with diamond abrasives. It is an indispensable process in chemical-mechanical planarization, which regulates the pad roughness by removing the surface residues. Additionally, conditioning maintains the material removal rates and increases the pad lifetime. As the conditioning continues, the pad profile becomes unevenly to be deformed, which causes poor polishing quality. Simulation calculates the density at which the diamond abrasives on the conditioner scratch the unit area on the pad. It can predict the profile deformation through the control of conditioner dwell time. Previously, this effect of the diamond shape on conditioning has been investigated with regard to microscopic areas, such as surface roughness, rather than global pad-profile deformation. In this study, the effect of diamond shape on the pad profile is evaluated by comparing the simulated and experimental conditioning using two conditioners: a) random-shaped abrasive conditioner (RSC) and b) uniform-shaped abrasive conditioner (USC). Consequently, it is confirmed that the USC is incapable of controlling the pad profile, which is consistent with the simulation results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.114-114
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• 2008

반도체 device의 성능을 향상시키기 위하여 패턴은 더욱 더 고 집적화 되고 배선 또한 다층배선 구조를 가지게 되었으며 요구되는 선폭 또한 더욱 미세화 되어 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 사용되는 소모품으로는 크게 세 가지의 중요한 부분으로 나눌 수 있다. 그것은 slurry와 pad, conditioner이다. 그중에 pad conditioning 공정은 CMP 공정시 pad의 마모에 따라 감소하는 removal rate(RR)값을 회복시키기 위한 공정으로 마모된 pad의 표면을 활성화 시켜주는 중요한 공정이다. 하지만 pad conditioning 공정을 장시간 진행하게 되면 conditioner 표면에 오염물이 발생하게 되며, 오염물로 인하여 wafer표면에 scratch 및 defect을 발생시키는 원인이 될 수 있다. 이러한 문제점을 보완하기 위하여 conditioner의 표면을 변화시켜 공정중의 오염이 발생하지 않도록 하는 것이 중요하다. 본 논문에서는 oxide CMP 실험을 통하여 conditioner표면에 오염물이 발생함을 확인하였으며 energy dispersive spectroscopy(EDS) 분석을 통하여 주오염물의 성분이 oxide slurry중 silica임을 확인하였다. Conditioner의 표면을 소수성으로 만들기 위하여 self assembled monolayer(SAM) 방법을 이용하여 표면에 코팅을 하였으며, 소수성 박막이 코팅된 conditioner와 코팅되지 않은 conditioner의 비교 실험을 통하여 오염 정도를 비교하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.51-52
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• 2007

This paper compared wired Acoustic Emission (AE) signals with wireless AE signals. According to the material and process condition, each process signal has distinguishable characteristic to show each removal phenomenon. Therefore, wired and wireless AE sensors having different bandwidth are complementary for CMP process monitoring. Especially, the AE sensor was used to investigate abrasive and molecular-scale phenomena during CMP process, which was compatible to acquire high level frequency. In experiment, wireless AE system was used to get signals in rotary system, using bluetooth. But, it is possible to acquire only RMS signals, which can not analyze abrasive and molecular-sale phenomena. Second, wired AE system was installed using mercury slip-ring, which is suitable not only for rotation equipment but also for acquiring original signals. The acquired signals were analyzed by FFT for understanding of abrasive and molecular revel phenomena in CMP process, finally, we verified that two types of AE sensor with different bandwidth were complementary for CMP process monitoring.

• Tribology and Lubricants
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• 제35권5호
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• 대한치과교정학회지
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• 제26권5호
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• pp.613-622
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• 1996

도재브라켓의 제거방법에 따라 법랑질표면에 미치는 영향을 비교 평가하기 위하여 80개의 발거된 소구치를 대상으로 통법에 의해 도재브라켓을 부착시키고 일 주일후 각각 40개의 기계적 방법에 의한 제거군과 전기열전도 방법에 의한 제거군으로 구분하여 도재브라켓의 제거를 유도한 후, 그 탈락양상 및 도재브라켓과 법랑질 표면의 주사선사현미경 관찰을 시행하였으며, 전기열전도 방법에 의한 제거군을 다시 각가 10개씩 고속 tungsten carbide but에 의한 연마군, 저속 sof-lex disc에 의한 연마군, 고속 resin polishing bur에 의한 연마군, 그리고 초음파 치속제거기에 의한 연마군으로 분류하여 잔여레진의 연마를 시행한 후, 잔여레진의 평가에 의해 다음과 같은 결론을 얻었다. 1) 결찰와이어 절단용 겸자를 이용한 도재브라켓의 기계적 제거시, 0.69의 평균 잔여레진 부착지수를 보임으로써 법랑질과 레진 경계부에서 파절이 가장 빈발한 양상을 보였다. 2) 전기열전도 방법을 이용한 도재브라켓의 제거시 2.19의 평균 잔여레진 부착지수를 보임으로써 브라켓과 레진 경계부에서의 파절이 가장 빈발한 양상을 보였다. 3) 기계식 방법으로 도재브라켓의 제거시, 법랑질표면의 주사현미경 관찰소견은 실험군의 $7.5\%$에서 법랑질표면의 탈락과 패임 등의 손상을 보였다. 4) 잔여레진의 제거의 고속 resin polishing bur사용군에서 가장 적은 잔여레진막을 보였다.