• Journal of the Institute of Electronics Engineers of Korea SP
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• v.48 no.5
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• pp.1-9
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• 2011

This paper presents a novel scratch detection and removal approach for old film images in wavelet-domain. Various scratch detection and removal algorithms have been proposed for past decades. However, accurate scratch detection and removal with a moderate amount of computing effort is still a problem because of trade off between the quality of the film and computational load. For overcoming this problem, we first decompose an input image using a 3-level wavelet transform, and then remove the scratch by shrinking wavelet coefficients using linear interpolation. Experimental results show that the proposed algorithm can efficiently detect and remove the scratch in damaged films, and also be incorporated into old film restoration systems.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.162-169
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• 2008

Film restoration is to detect the location and extent of defected regions from a given movie film, and if present, to reconstruct the lost information of each regions. It has gained increasing attention by many researchers, to support multimedia service of high quality. Among artifacts, scratch is the most frequent degradation. In this paper, an automatic film line scratch removal system is developed that can detect and restore all kind of scratches. For this we use the spatial information of scratches: The scratch in old films has lower or higher brightness than neighboring pixels in its vicinity and usually appears as a vertically long thin line. Our systems consists of scratch detection and scratch restoration. The scratches of various types are detected by neural network based texture classifier and morphology-based shape filter and then the degraded regions are restored using bilinear interpolation. To assess the validity of the Proposed method, it has been tested with all kinds of scratches, and then experimental results show that the proposed approach is robust to various scratches and efficient to apply a real film removal system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.59-59
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• 2009

현재 CMP분야는 광역 평탄화 반도체 소자의 집적화 및 소형화가 진행됨에 따라서 CMP 공정의 중요성은 날로 성장하고 있다. 하지만 이러한 CMP공정은 불가피하게도 scratch, pit, CMP residue와 같은 defect들을 발생시키고 있으며, 점점 선폭이 작아짐에 따라, 이러한 defect들이 반도체 수율에 미치는 영향은 심각해지고 있다. Defect들 중에 특히 scratch는 반도체에 치명적인 circuit failure를 일으키게 된다. 또한 반도체 내구성과 신뢰성을 감소시키게 되고, 누전전류를 증가시키는 등 바람직하지 못한 현상들이 생기게 된다. 본 연구에서는 scratch 와 같은 deflect들을 효율적으로 검출, 분석하고, scratch를 감소시키는데 그 목적이 있다. 본 실험을 위해 8" TEOS wafer와 commercial oxide slurry 및 friction polisher (Poli-500, G&P tech., Korea)를 사용하여 CMP 공정을 진행하였으며, CMP 공정조건은 각각 80rpm/80rpm/1psi(Platen speed/Head speed/Pressure)에서 1분 동안 연마를 한 후 scratch 발생 경향을 살펴보았다. CMP 후 wafer위에 오염되어 있는 slurry residue들을 제거하기 위해 SC-1, HF 세정을 이용하여 최적화된 post-CMP 공정기술을 제안하였다. Scratch 검출 및 분석을 위해 wafer surface analyzer (Surfscan 6200, Tencor, USA)와 optical microscope (LV100D, Nicon, Japan)를 사용하였다. CMP 공정 변수들에 따른 scratch 발생정도를 비교하였으며, scratch 발생 요인들에 따른 scratch 형태 및 발생정도를 살펴보았다. 최적화된 post-CMP 세정 조건은 메가소닉과 함께 SC-1 세정을 실시하여 slurry residue들을 제거한 후, HF 세정을 실시하여 잔여 오염물들을 제거하고 검출이 용이하도록 scratch를 확장시킬 수 있도록 제안하였으며, 100%의 particle removal efficiency (PRE)를 얻을 수 있었다. 실제 CMP 공정후 post-CMP 세정 단계별 scratch 개수를 측정한 결과, SC-1 세정 후 약 220개의 scratch가 검출되었으며, 검출되지 않았던 scratch가 HF 세정 후 확장되어 드러남에 따라 약 500개의 scratch 가 검출되었다.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.134-140
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• 2002

Chemical mechanical polishing of aluminum and photoresist using colloidal silica-based slurry was experimented. The effects of slurry pH, silica concentration, and oxidizer ($H_2O_2$) concentration on surface roughness and removal rate were studied. The optimum slurry conditions for reduction of micro-scratch were investigated. The optimum chemical mechanical polishing with the colloidal silica-based slurry was compared with conventional chemical mechanical polishing with alumina-based slurry. Chemical mechanical polishing of the aluminum with the colloidal silica-based slurry showed improved result but chemical mechanical polishing of the photoresist did not. The improved result was comparative with that of chemical mechanical polishing with filtered alumina-based slurry which one of desirable methods to reduce the micro-scratch.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.46 no.2
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• pp.1-9
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• 2009

In recent years, a film restoration has gained increasing attention by many researchers, to support multimedia service of high quality. In general, an old film is degraded by dust, scratch, flick, and so on. Among these, the common factors are scratch and blotch, so that many researchers have been investigated to restore these degradations. However, the methods in literature have one major limitation: A method is working well in dealing with scratches, however it is poorly working in processing the blotches. The goal of this work is to develop a robust technique to restore images degraded by both scratches and blotches. For this, we use MRF-MAP (Markov random field - maximum a posteriori) framework, so that the restoration problem is considered as the minimization problem of the posteriori energy function. As the minimization is one of complex combinatorial problem, we use distributed genetic algorithms (DGAs) that effectively deal with combinatorial problems. To asses the validity of the proposed method, it was tested on natural old films and artificially degraded films, and the results were compared with other methods. Then, the results show that the proposed method is superior to other methods.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.9
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• pp.165-170
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• 2001

In normal grinding abrasive particles of a grinding wheel rotate on planes parallel to the direction of workpiece fred. which may induce continued scratch lines on ground surface as the workpiece feeds. Instead in helical scan grinding the planes make an angle, called a helical angle, with the feeding direction. Thus scratch lines produced by abrasive particles per one revolution are discontinued which implies that the generation of scratch lines are suppressed by the helical scan grinding. In this study some experimental works have been done on the helical scan grinding of glass to find the effects of grinding conditions on the surface roughness and estimate the optimal grinding conditions. The helical angle, fred rate, material removal rate and the wheel speed are taken as factors for three kinds of grinding wheels i.e., coarse(#140 mesh), medium(#400) and fine(#800) diamond wheels. The experiments are scheduled by Taguchi technique and ANOVA has been carried out for the interpretation of the results. As a result of this study effects of the factors are verified quantitatively showing that the major factors are changed according to the wheel's mesh size and the helical angle is one of the influencing factors on the surface quality.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1682-1687
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• 2003

Die polishing technology is very critical to determine quality and performance of the final products. Generally, the rotation-type tool is used most widely in the polishing process. However it is difficult to make the mirror surface, because the method using the rotation-type tool causes a lot of tiny scratch on the polished surface. This paper proposes a new method using the oscillation-type tool that reduces the scratch and improves the surface roughness. As result. the mirror surface was able to obtain by using the oscillation-type tool. AE is known to be closely related to material removal rate(MRR). As the surface is rougher, MRR gets larger and AE increase. The surface roughness can be indirectly estimated using the AE signal measured during automatic die polishing process. In this study. an AE sensor based monitoring system was developed to investigate the relation the level of AE RMS with the surface roughness during polishing process.

• Journal of Broadcast Engineering
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• v.27 no.2
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• pp.228-239
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• 2022

In this paper, we propose an unmanned vehicle scratch detection deep learning model for car sharing services. Conventional scratch detection models consist of two steps: 1) a deep learning module for scratch detection of images before and after rental, 2) a manual matching process for finding newly generated scratches. In order to build a fully automatic scratch detection model, we propose a one-step unmanned scratch detection deep learning model. The proposed model is implemented by applying transfer learning and fine-tuning to the deep learning model that detects changes in satellite images. In the proposed car sharing service, specular reflection greatly affects the scratch detection performance since the brightness of the gloss-treated automobile surface is anisotropic and a non-expert user takes a picture with a general camera. In order to reduce detection errors caused by specular reflected light, we propose a preprocessing process for removing specular reflection components. For data taken by mobile phone cameras, the proposed system can provide high matching performance subjectively and objectively. The scores for change detection metrics such as precision, recall, F1, and kappa are 67.90%, 74.56%, 71.08%, and 70.18%, respectively.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.