• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.819-827
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• 2007

A numerical algorithm for estimating precise backscattering coefficients of rice fields is proposed and its accuracy is verified in this paper. After a bunch of rice plants above water surface is modeled with a bunch of randomly oriented lossy dielectric bodies above an impedance surface and the equivalent volume currents of the lossy dielectrics are computed using the moment method. Then, the scattered fields of a rice field with many bunches are computed with a Monte Carlo method, and consequently the backscattering coefficient of the rice field is computed for various incidence angles and polarizations. Finally, the backscattering coefficient of a rice field is measured at 1.85 GHz using an R-band scatterometer system, and these experimental data are used to verify the numerical algorithm proposed in this paper. It is found that the numerical computation results agree well with the measurement data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.196-203
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• 2015

In order to apply cylindrical periodic array to phased array antenna or frequency selective surface, efficient electromagnetic analysis is required. Finite periodic array is applied in real situation. But, generally, assumed that periodic structure is arranged infinitely, approximate electromagnetic characteristics can be obtained efficiently. But, difference of characteristics between real structure and approximate structure occurs because finite periodic array is approximated to infinite periodic array. Therefore, comparison and analysis of cylindrical infinite array and finite array are required. In this paper, cylindrical infinite periodic array are analyzed using cylindrical Floquet harmonics. Also, cylindrical finite periodic array is analyzed using method of moments (MoM) with thin wire approximation because periodic structures which are composed of strip with narrow width are analyzed. Transmission characteristics and surface currents of infinite and finite periodic structures are compared.

• Economic and Environmental Geology
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• v.27 no.5
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• pp.491-498
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• 1994

The integral equation method is used for magnetotelluric (MT) modeling of a finite inhomogeneity in a two-layered earth. An integral equation relates the incident plane-wave field and the scattering currents in the three-dimensional (3-D) inhomogeneity through the electric tensor Green's function appropriate to a layered earth. This paper describes an effect of overburden and basement on MT responses of 3-D body. The effect of overburden is to reduce the detectability of target, and the reduction of detectability is more apparent for conductive overburden than for resistive one. The effect of basement, on the other hand, may enhance the anomaly due to 3-D body in the upper layer. In case of the resistive basement current perturbations about the body tend to be confined to the more conductive upper layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.8
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• pp.45-53
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• 1999

Electromagnetic scattering by finite number of conducting strips loaded on a grounded dielectric is considered for the TM polarization case from the viewpoints of transmitting(receiving) leaky wave antenna and grating coupler. An integro-differential equation whose unknowns are the induced currents over the strips is derived and solved by use of the method of moments. In order to construct the non-uniform leaky wave structures with specific source(current) distributions over the strips, distances between two adjacent strips and strip width are simultaneously varied along the structure. From some results for the current distributions over the strips and surface wave powers, it is observed that the maximum coupling efficiencies of the appropriately constructed non-uniform leaky wave structures from the viewpoints of both a receiving leaky wave antenna and a grating coupler amount upto 95%, which are about 15% improvements compared with those(80%) of the uniform structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.