• Korean Journal of Ichthyology
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• v.35 no.1
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• pp.44-49
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• 2023

A single specimen of the genus Bothus (family Bothidae) was collected for the first time at the intertidal zone of Moseulpo Port, Daejeong-eup, Seogwipo-si, Jejudo Island, on 14 August 2022. The specimen was identified as Bothus pantherinus in having following morphological traits: dark spots and ring-shaped patterns near eyes and the pectoral fins, one distinct spot in the center of the lateral line, 75 lateral line scales, and seven hourglass shaped supracranial pterygiophores. As a result of analyzing 603 bp of mitochondrial DNA COI sequences, our specimen was perfectly matched to those of B. pantherinus registered in NCBI. It has been known that the species is widely distributed throughout the Indo-Pacific Ocean from Red Sea to Hawaiian (32 degrees north to 32 degrees south), but this study revealed that its distribution expanded to the waters of Jejudo Island (33 degrees north), Korea. We propose its new Korean name "Beot-kkoch-mu-nui-dung-geul-neob-chi".

• Journal of The Korean Astronomical Society
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• v.50 no.6
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• pp.167-178
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• 2017

We present a study of the inexplicit connection between radio jet activity and ${\gamma}$-ray emission of BL Lacertae (BL Lac; 2200+420). We analyze the long-term millimeter activity of BL Lac via interferometric observations with the Korean VLBI Network (KVN) obtained at 22, 43, 86, and 129 GHz simultaneously over three years (from January 2013 to March 2016); during this time, two ${\gamma}$-ray outbursts (in November 2013 and March 2015) can be seen in ${\gamma}$-ray light curves obtained from Fermi observations. The KVN radio core is optically thick at least up to 86 GHz; there is indication that it might be optically thin at higher frequencies. To first order, the radio light curves decay exponentially over the time span covered by our observations, with decay timescales of $411{\pm}85$ days, $352{\pm}79$ days, $310{\pm}57$ days, and $283{\pm}55$ days at 22, 43, 86, and 129 GHz, respectively. Assuming synchrotron cooling, a cooling time of around one year is consistent with magnetic field strengths $B{\sim}2{\mu}T$ and electron Lorentz factors ${\gamma}$ ~ 10 000. Taking into account that our formal measurement errors include intrinsic variability and thus over-estimate the statistical uncertainties, we find that the decay timescale ${\tau}$ scales with frequency ${\nu}$ like ${\tau}{\propto}{\nu}^{-0.2}$. This relation is much shallower than the one expected from opacity effects (core shift), but in agreement with the (sub-)mm radio core being a standing recollimation shock. We do not find convincing radio flux counterparts to the ${\gamma}$-ray outbursts. The spectral evolution is consistent with the 'generalized shock model' of Valtaoja et al. (1992). A temporary increase in the core opacity and the emergence of a knot around the time of the second ${\gamma}$-ray event indicate that this ${\gamma}$-ray outburst might be an 'orphan' flare powered by the 'ring of fire' mechanism.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.10
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• pp.33-46
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• 2015

In this paper, we predicts the analog and digital circuit performance of FinFETs that are scaled down following the ITRS(International technology roadmap for semiconductors). For accurate prediction of the circuit performance of scaled down devices, accurate parasitic resistance and capacitance analytical models are developed and their accuracies are within 2 % compared to 3D TCAD simulation results. The parasitic capacitance models are developed using conformal mapping, and the parasitic resistance models are enhanced to include the fin extension length($L_{ext}$) with respect to the default parasitic resistance model of BSIM-CMG. A new algorithm is developed to fit the DC characteristics of BSIM-CMG to the reference DC data. The proposed capacitance and resistance models are implemented inside BSIM-CMG to replace the default parasitic model, and SPICE simulations are performed to predict circuit performances such as $f_T$, $f_{MAX}$, ring oscillators and common source amplifier. Using the proposed parasitic capacitance and resistance model, the device and circuit performances are quantitatively predicted down to 5 nm FinFET transistors. As the FinFET technology scales, due to the improvement in both DC characteristics and the parasitic elements, the circuit performance will improve.