• Korean Journal of Materials Research
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• v.10 no.11
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.497-498
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• 2013

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.508-511
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• 2001

Experimental studies of the brittle-ductile transition (BDT) for pre-cracked sapphire single crystals were carried out. The BDT temperature in sapphire single crystals were $1000\pm$$25^{\circ}C$ and 1100$\pm$$25^{\circ}C$ at constant strain rate 3.3$\times$$10^{-5}$/sec and 3.3$\times$$10^{-6}$/sec, respectively. With aid of the BDT model, the activation energy for prism plane slip {1120} <1100> dislocation velocity was in the range of 4.6$\pm$2.3eV This activation energy for dislocation velocity with BDT model was compatible with the result of the dislocation velocity (3.8eV) using the etch-pit techniques.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.337-343
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• 2000

Prism plane slip {11$\bar{2}$0}1/3{$\bar{1}$120} location velocity in sapphire ($\alpha$-Al$_2$O$_3$) single crystals was measured by etch-pit method. The dislocation velocities were measured as a function of temperature and stress between $1150^{\circ}C$ and $1400^{\circ}C$ for engineering stresses in the range 140 to 250 MPa. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be 4.2$\pm$0.4 eV. On the other hand, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 4.5$\pm$0.8. Through this experiments, it was reconfirmed that the basal plane in sapphire single crystals has the 3-fold symmetry.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.466-472
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• 1994

An Argon laser pumped Ti:Sapphire laser has been constructed and self-mode locked. Mode-locking was initiated by a moving mirror mounted on the ball slider and maintained by the self-focusing in the laser crystal and an aperture inside the resonator. A prism pair was used to reduce group velocity dispersion. The bandwidth and the pulse width of the mode-locked pulse were 11 nm, $1000\pm20fs$, respectively. ively.

• Tribology and Lubricants
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• v.32 no.2
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• pp.50-55
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• 2016

Recently, a double-side machining process has been adopted in fabricating a sapphire glass to enhance the manufacturability. Double-side lap grinding (DLG) is one of the emerging processes that can reduce process steps in the fabrication of sapphire glasses. The DLG process uses two-body abrasion with fixed abrasives including pallet. This process is designed to have a low pressure and high rotational speed in order to obtain the required material removal rate. Thus, the temperature is distributed on the DLG platen during the process. This distribution affects the shape of the substrate after the DLG process. The coolant that is supplied into the cooling channel carved in the base platen can help to control the temperature distribution of the DLG platen. This paper presents the results of computational fluid dynamics with regard to the heat transfer in a DLG platen, which can be used for fabricating a sapphire glass. The simulation conditions were 200 rpm of rotational speed, 50℃ of frictional temperature on the pallet, and 20℃ of coolant temperature. The five cases of the coolant flow rate (20~36 l/min) were simulated with a tetrahedral mesh and prism mesh. The simulation results show that the capacity of the generated cooling system can be used for newly developed DLG machines. Moreover, the simulation results may provide a process parameter influencing the uniformity of the sapphire glass in the DLG process.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.430-438
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• 1999

We have utilized soft-aperturing by gain media to develop a high-power tunable Ti:Sapphire laser with sub-40-fs and broad tuning range. The tunable spectral range was only limited by the bandwidth of mirrors. We made use of knife-edge slits near an intra-cavity prism controlled by micro-stepping-motors to tune the center wavelength continuously. The tunability of the center wavelength was ranged from 770 nm to 870 nm, and the measured pulsewidth was sub-40 fs throughout the above spectral range. The shortest pulsewidth was about 17 fs at the center wavelength of 820 nm and the spectral bandwidth was 72 nm. At 5 W pumping power of the Ar-ion laser we obtained average output power of 440 mW~580 mW. For the cw and Kerr-lens mode-lodking conditions, we have evaluated the value of an amplitude modulation to be ${\gamma}=2.5{\times}10^{-8}/W$ from the calculated waists of a Gaussian beam on the Ti:sapphire crystal surface. Using this result we demonstrate that the generation of sub-40-fs Kerr-lens mode-locked pulse can be described by the Ginzberg-Landau model which is a weak pulse shaping model.