• Journal of the Mineralogical Society of Korea
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• v.22 no.2
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• pp.81-86
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• 2009

The luminescence and fluorescence were investigated by photoluminescence spectroscopy for six gemstones which exhibit color change effect. The shape of luminescence peaks appears different when observed by a photoluminescence spectroscopewith a 514 nm Ar laser source. However, it was not possible to observe the difference in the spectra between the natural and synthetic origins for the same type of gemstones. It was found that the photoluminescence spectrum was related to the crystal structure of the stones. Photoluminescence spectra using a 325 nm He-Cd source reveal that fluorescence is relatively strong for synthetic alexandrite, synthetic color change sapphire and natural alexandrite comparing to the rest of gemstones examined.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• Progress in Superconductivity
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• v.2 no.2
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• pp.92-96
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• 2001

We have fabricated a modified hairpin-type YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) 2-pole microstrip bandpass filter with the center frequency of 5.8 GHz. We designed a hairpin-type filter with interdigital-coupled inner poles to improve the filter performance. Compared to a typical hairpin-type filter of the same size, the center frequency, the bandwidth and the insertion loss appeared smaller by 14.5% ,29.6%, and 0.55 dB, respectively. The dimensions of the filter were 13.7mm ${\times}$3.3 mm. YBCO films deposited on r-cut sapphire buffered with a CeO$_2$thin layer were used fur making the filter.

• Progress in Superconductivity
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• v.3 no.2
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• pp.252-256
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• 2002

We studied YBCO films for current limiting of the resistive type which utilizes a transition from superconducting to normal state caused by exceeding critical current. The films were deposited on sapphire substrates and covered by gold top layer. The current limiting element consists of 2 mm wide YBCO stripes connected in series. A serious problem in using YBCO films for current limiting is inhomogeneities caused by imperfect manufacturing. Therefore simultaneous quench is a difficult problem when elements for current limiting are connected in series. So some researchers have recently proposed using magnetic field and heating for simultaneous quench. We have measured extended exec trim field-current density(E-J) characteristics for current limiting elements of YBCO films in applied magnetic field of 0 - 130 mT. And we have investigated quench characteristics in current limiting elements and between elements of YBCO films in applied magnetic field. The result of the experiments show that the presence of applied magnetic fields induces uniform quench distribution fur the stripes in element at $50V_{rms}$, otherwise non-uniform quenches were observed. And simultaneous quenches between elements were investigated at $150V_{rms}$. We suggest that suppressing the critical current by increased fields due to fault current effectively forced the stripes of higher $J_{c}$(0) to quench, resulting in equalizing quench times.s.s.s.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.209-210
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• 2006

We have successfully termed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. Thanks to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.149-150
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• 2006

We describe a novel method of scanning probe nanofabrication using a AFM(atomic force microscopy) tip with assistance of Femtosecond laser pulses to enhance fabrication capability. Illumination of the AFM tip with ultra-short light pulses induces a strong electric field between the tip and the metal surface, which allows removing metal atoms from the surface by means of field evaporation. Quantum simulation reveals that the field evaporation is triggered even en air when the induced electric field reaches the level of a few volts per angstrom, which is low enough to avoid unwanted thermal damages on most metal surfaces. For experimental validation, a Ti: sapphire Femtosecond pulse laser with 10 fs pulse duration at 800 nm center wavelength was used with a tip coated with gold to fabricate nanostructures on a thin film gold surface. Experimental results demonstrate that fine structures with critical dimensions less than ${\sim}10nm$ can be successfully made with precise control of the repetition rate of Femtosecond laser pulses.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Laser Solutions
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• v.14 no.1
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• pp.1-5
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• 2011

Photo-induced gratings m flexible PDMS (polydimethly siloxane) film are directly written by a high-intensity femtosecond (130fs) Ti: Sapphire laser (${\lambda}_p$ = 800nm). The refractive index modifications with $4\;{\mu}m$ diameters were photo-induced after the femtosecond irradiation with peak intensities of more than $1{\times}10^{11}W/cm^2$. The graded refractive index profile was fabricated to be a symmetric around the center of the point at which femtosecond laser by controlling both laser power and focused depth. The change on refractive index in the laser-modified regions was estimated to be approximately $10^{-3}$. The internal flexible symmetric diffraction gratings in PDMS film was successfully fabricated using a femtosecond laser.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.211-214
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• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.