• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.89-89
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• 2003

• Laser Solutions
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• v.8 no.1
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• pp.39-44
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• 2005

We report experimental results on the periodic patterning using a Ti:sapphire femtosecond laser (800nm, 100fs, 1kHz). Periodic structures with reproducible basic patterns are produced both on the surface and inside transparent materials. Period patterning for the application to display panel is widely investigated. Also, the submicron dot and line patterns are fabricated inside fused silica glass, which is important for the formation of diffraction grating in integrated optical circuit. finally, we demonstrate the utility of the femtosecond laser application to optical memory by fabricating the three-dimensional dot patterns.

• Progress in Superconductivity
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• v.9 no.2
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• pp.188-192
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• 2008

We investigated the size effect on quench development in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current, and immersed in liquid nitrogen during the experiment. After the initial rapid rise, the resistance increased moderately and then slowly. In 4 inch-diameter meander lines, the period during which the resistance increased moderately was considerably longer than in 2 inch-diameter line. Moderate increase of resistance was originated from quench propagation. The film temperature was about 180 K at the point when the propagation was completed. The rate of resistance increase after the quench completion was not affected by the film size.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.82-82
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• 2011

본 연구에서는 이온빔 스퍼터링 방법으로 증착한 Cr2O3, Ta2O5, HfO2 산화물박막의 구조적 특성변화를 관찰하였다. 금속박막에서 표면이 산화되는 문제를 해결하기위하여 산화물 박막을 증착시켰다. 이온빔 스퍼터링으로 박막 증착 시 산화물 타겟을 사용할 때 발생되는 전하의 영향을 상쇄하기 위하여 neutralizer를 사용하였다. 박막 증착 후 XRR (X-ray Reflectometer)을 이용하여 박막의 두께, 거칠기 및 밀도를 확인하였으며, AFM (Atomic Force MicroScope)을 통하여 증착한 박막표면 거칠기 측정을 하여 XRR로 얻은 데이터와 비교하여 살펴보았다. 또한 XPS (X-ray photoelectron spectroscopy)측정을 통해 제조된 박막의 화학적 결합상태를 확인하였다. 여러 가지 조건변화와 기판의 차이에 따라 제작된 산화물 박막 중 실리콘 기판을 사용하여 증착시킨 박막은 XRR측정시 반사율 곡선에서 자연 산화막에 의한 영향이 나타났다. 반면 glass나 sapphire에 증착시킨 산화물 박막은 실리콘기판에서 나타난 자연 산화막의 영향을 받지 않음을 확인하였다. 기판과 산화물 박막사이에 계면층에 나타나는 영향을 최소화시킴으로써 양질의 박막을 제작할 수 있을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.423-423
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• 2012

ZnO, SnO2, In2O3:Sn와 같은 투명하고 전도성이 있는 박막은 panel display, 전자발광소자, 박막트랜지스터, 태양전지 등의 전극물질로서 폭넓게 사용되고 있다. 이러한 전극 물질을 이용하는 광전자소자의 성능을 개선하기 위해서는 가시광선영역에서 광투과율이 높고, 전기전도도가 좋아야 한다. 최근 ZnO, SnO2, In2O3, MgO, Ga2O3 등으로 이루어진 3원 또는 다원화합물로 제조된 산화물 박막이 새로운 투명한 전도성 박막으로 많은 관심을 끌고 있다. 본 연구에서는 Ga2O3 박막을 radio-frequency magnetron sputtering 방법을 이용하여 증착하였다. 기존에 사용되던 ceramic target을 개선하여 powder target을 사용하였다. 반응가스는 순수하게 Ar 가스만 사용하였고, Sapphire(0001) 기판을 사용하였다. 초기에는 flat한 layered 구조로 증착이 이루어졌으나, 증착시간이 20분이 지나면서부터는 밤송이 모양을 가지는 나노구조체가 생성되기 시작하였고, 이후 나노 밤송이의 밀도가 점차 증가하였다. Ga2O3 나노 밤송이의 특성에 대하여 발표할 예정이다.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.598-605
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• 2003

The optimized conditions for the cross-sectional TEM sample preparation using tripod polisher and ion-beam miller was confirmed by AFM and TEM. For the TEM observation of interfaces including InGaN layers like InGaN/GaN MQW structures, the sample preparation by the only tripod polishing was useful due to the reduction of artifacts. On the other hand, in case of the thick nitride films like ELO, PE, and superlattice, both tripod polishing and controlled ion-beam milling were required to improve the reproducibility. As a result, the ion-beam milling with the $60^{\circ}$modulation showed the minimum height difference between film and sapphire interface and the ion-beam milling of the $80^{\circ}$modulation showed the broad observable width.

• Laser Solutions
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• v.15 no.2
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• pp.1-5
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• 2012

Gelatin is used as a model for soft biological tissues in studying laser interaction with the soft tissues. In this work, we analyze the interaction between gelatin and excimer and Ti:Sapphire femtosecond laser under various conditions, especially by varying the laser, laser fluence and pulse number. The results show that swelling of the surface and ablation depth can be controlled by adjusting the process parameters.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.83-87
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• 2005

We enhanced the color of blue sapphires and rubies successfully by using a oxygen-propane torch flame annealing, which had not been employed so far. We confirmed that about 1 mm-thick de-coloring of the corundum samples were available with 60 minutes flame annealing through eye evaluation, color coordination characterization, and methylene iodide immersion observation. We also suggest that the color centers such as $[Fe_{Al}^{\cdot}]$ may transform into transparent $[Fe_{Al}^{x}],\;[Cr_{A1}^{x}]$ sites with $[V_o^']$ generation at the elevated temperature in oxygen-rich atmosphere by diffusion mechanism. Our results implied that the longer diffusion time and the higher oxygen partial pressure might lead to the better de-coloring enhancement in corundum gem stones.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.103-106
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• 2000

ZnO is a wide-bandgap II-IV semiconductor and has a variety of potnetial applications. ZnO exhibits good piezoelectric, photoelectric and optical properties, and is a good candidate for an electroluminescence device. ZnO films have been deposited on (001) sapphire by PLD technique. Nd:YAG pulsed laser was operated at a wavelength of $\lambda=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C\; to\;700^{\circ}C$ films showed strong UV emission by increasing the partial oxygen pressure. We have investigated the relationship between partial oxygen pressure and the intensity of UV emission.