• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.412-413
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• 2005

This paper describes resonant frequency of the structural behavior of micro-cantilever beam simulated by FEM (Finite Element Method). The resonant characteristics and the sensitivity of cantilever-shaped SOI resonant were measured for the application of chemical sensor. The resonant frequency of the fabricated micro-cantilever system was found to be 5.59kHz when the size of cantilever is $500{\mu}m$ long, $100{\mu}m$ wide and $1{\mu}m$ thick. Generation of resonant frequency measured by Modal Analysis is resulted in length of cantilever. The length was found to be a dominant factor for the selection of required resonant frequency range. On the other side, the width had influenced very little on either the magnitude of resonant frequency or the sensitivity.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.713-716
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• 2013

The device performances of N-channel Tunneling FET have been characterized with different intrinsic length between drain and gate($L_{in}$), drain and source doping, permittivity and oxide thickness when the total effective channel length is constant. N-channel Tunneling FET of SOI structure have been used in characterization. $L_{in}$ was from 30nm to 70nm, dose concentration of drain and source were from $2{\times}10^{12}cm^{-2}$ to $2{\times}10^{15}cm^{-2}$ and from $1{\times}10^{14}cm^{-2}$ to $3{\times}10^{15}cm^{-2}$, permittivity was from 3.9 to 29, and oxide thickness was from 3nm to 9nm. The device performances were characterized by Subthreshold slope(S-slope), On/off ratio, and leakage current. From the simulation results, the leakage current have been reduced for long $L_{in}$ and low drain doping. S-slope have been reduced for high source doping, high permittivity and thin oxide thickness. With considering the leakage current and S-slope, it is desirable that are long $L_{in}$, low drain doping, high source doping, high permittivity and thin oxide thickness to optimize device performance in n-channel Tunneling FET.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.199-203
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• 2008

The effects of surface treatment by $O_2$ plasma on the Bio-FETs were investigated by using the pseudo-MOSFETs on the SOI substrates. After a surface treatment by $O_2$ plasma with different RF powers, the current-voltage and field effect mobility of pseudo-MOSFETs were measured by applying back gate bias. The subthreshold characteristics of pseudo-MOSFETs were significantly degraded with increase of RF power. Additionally, a forming gas anneal process in 2 % diluted $H_2/N_2$ ambient was developed to recover the plasma process induced surface damages. A considerable improvement of the subthreshold characteristics was achieved by the forming gas anneal. Therefore, it is concluded that the pseudo-MOSFETs are a powerful tool for monitoring the surface treatment of Bio-FETs and the forming gas anneal process is effective for improving the electrical characteristics of Bio-FETs.

• Journal of Bio-Environment Control
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• v.24 no.4
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• pp.271-274
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• 2015

The objective of this study was to investigate the effects of composition of nutrient solution on the growth and quality of baby leaf vegetables (tat soi, romaine lettuce, beet, and red radish) hydroponically cultivated in plant factory. The seeds of four vegetable crops were sown in urethane sponges and cultivated for 14 days in a plant factory. Light intensity and photoperiod were $110{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ and 16 h, respectively; and air temperature in photo/darkperiod was maintained at $25/20^{\circ}C$. Tap water was used for irrigation for 7 days after sowing, and then plants were irrigated for 7 days using tap water and the nutrient solutions of Korea Wonshi, Japan Enshi, and Yamazaki for lettuce. At 14 days after sowing, the fresh weight of tah soi was highest in the nutrient solution of Yamazaki for lettuce, and there were no significant differences among nutrient solutions in beet and red radish. When we compared leaf color using Hunter's a value, the nutrient solution of Korea Wonshi and Japan Enshi increased green color in baby leaf vegetables, while the nutrient solution of Yamazaki for lettuce increased red color. Total phenolic content of romaine lettuce was highest in the nutrient solution of Korea Wonshi, but tat soi, beet, and red radish showed no significant differences among nutrient solutions in total phenolic contents. From these results, we suggest that using the nutrient solution of Korea Wonshi can enhance the growth and quality of romaine lettuce and the nutrient solution of Yamazaki for lettuce is appropriate for enhancing the growth and red color of beet and red radish in plant factory.

• Journal of Korean Society for Atmospheric Environment
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• v.23 no.4
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• pp.420-429
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• 2007

In this study, we attempted to evaluate the relationship between air dilution sensory test and instrumental detection method for individual odorous compound. For the purpose of our comparative study, we conducted the analysis of malodor on total of 46 samples collected from both industrial and food waste sectors using the two independent approaches. The results of instrumental analyses were explained after modification to several parameters such as: the sum of odor concentration (SOC), sum of odor quotient (SOQ) and sum of odor intensity (SOI). When we compared dilution ratio values (DRV) of threshold limit (TL) with the modified instrumental data sets, pearson coefficient of SOC, SOQ, and SOI were 0.556 (p=5.83E-05), 0.911 (p=9.64E-19) and 0.847 (p=8.93E-14), respectively. The results of this study thus suggest that the DRV of TL sensitively reflects odor strength measured intuitive.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3279-3281
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• 1999

This paper describes a method of direct wafer bonding using surfaces activated by a radio-frequency hydrogen plasma. The hydrogen plasma cleaning of silicon in the RIE mode was investigated as a pretreatment for silicon direct bonding. The cleaned silicon surface was successfully terminated by hydrogen, The hydrogen-terminated surfaces were rendered hydrophilic, which could be wetted by Dl water rinse. Two wafers of silicon and silicon dioxide were contacted to each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in an $N_2$ atmosphere for 2 h. From the AFM results, it was revealed that the surface became rougher with the increased plasma exposure time and power. The effect of the plasma treatment on the surface chemistry was investigated by the AES analysis. It was shown that the carbon contamination at the surface could be reduced below 5 at %. The interfacial energy measured by the crack propagation method was 122 $mJ/m^2$ and 384 $mJ/m^2$ for RCA cleaning and hydrogen plasm, respectively.

• Journal of the Korean Society for Library and Information Science
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• v.47 no.2
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• pp.181-200
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• 2013

The test instrument utilized to diagnose and evaluate a trainee's ability are necessary for an effective information literacy education. Nevertheless, there is a lack of a standardized test instrument to comprehensively measure students' information literacy. The purpose of this study is to develop a standardized test instrument to evaluate the information literacy of middle school students, and to verify the reliability and validity of the test instrument. For this purpose, this study selected factors that can show the information literacy and developed an information literacy test framework that was designed based on Guilford's SOI model and Meeker's SOI-LA test. The test instrument that was developed through this study is a 30-item Web-based multiple-choice test. This study administrated tests in middle school students (794 students joined), and analyzed difficulty, reliability, discrimination index, validity of tests, and reviewed tests items to qualify the standardized test. The cutoff score was also decided when using these tests as a diagnostic information literacy assessment.

• Journal of Korean Philosophical Society
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• v.131
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• pp.303-330
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• 2014

Les avis des philosophes sur la mort sont $diff{\acute{e}}rentes$ selon leurs visions du monde. Certains essaient de surmonter la peur sur la mort, en $n{\acute{e}}gligeant$ la mort, et certains essaient de vivre le vraie vie par la $m{\acute{e}}ditation$ de la mort. Chez Kierkegaard la notion de la mort se $pr{\acute{e}}sente$ comme key-world $tr{\grave{e}}s$ important, et cela signifie qu'il parle par la mort une vie $s{\acute{e}}rieuse$ et vraie. Pour Kierkegaard la mort signifie d'abord la mort de la vie mondaine ou la $n{\acute{e}}gation$ de soi, cela est en faveur de sa conception de la nature humaine $o{\grave{u}}$ l'homme est fondamentalement un ${\hat{e}}tre$ $probl{\grave{e}}matique$ et ${\grave{a}}$ la fois ceuli qui a un rapport avec $l^{\prime}{\acute{e}}ternel$. Le $d{\acute{e}}sespoir$ de l'homme sur la vie $pr{\acute{e}}sente$ peut devenir 'la maladie qui entraîne la mort' c'est-${\grave{a}}$-dire la mort spirituelle, mais il peut donner aussi une chemin par laquelle l'homme se dirige en tant qu'individu vers l'Absolu. Chez lui ${\hat{e}}tre$ $s{\acute{e}}rieux$ signifie devenir existentiellement par la $n{\acute{e}}gation$ de soi. Et l'absence de la $sinc{\acute{e}}rit{\acute{e}}$ signifie l'absence de soi en tnat $qu^{\prime}{\hat{e}}tre$ spirituel. Ainsi la $pens{\acute{e}}e$ $s{\acute{e}}rieuse$ sur la mort $n^{\prime}{\acute{e}}tant$ autre chose que de penser la mort comme la partie de $l^{\prime}{\hat{e}}tre$ $pr{\acute{e}}sent$, elle devient la source ${\acute{e}}nergique$ qui permet de vivre pleinement le $pr{\acute{e}}sent$ comme $r{\acute{e}}alit{\acute{e}}$ $li{\acute{e}}$ ${\acute{a}}$ $l^{\prime}{\acute{e}}ternit{\acute{e}}$. Sa $pens{\acute{e}}e$ $s{\acute{e}}rieuse$ sur la mort permet d'avoir une conviction religieuse par laquelle l'homme peut penser la mort corporelle comme aventure $li{\acute{e}}e$ ${\grave{a}}$ $l^{\prime}{\acute{e}}ternit{\acute{e}}$ et par laquelle l'homme peut penser aussi la vie $apr{\grave{e}}s$ la mort comme vraie vie que les justes avaient $d{\acute{e}}sir{\acute{e}}s$. Cette $pens{\acute{e}}e$ de Kierkegaard sur la mort signifie le sens $m{\acute{e}}taphysique$ sur la mort au sens $o{\grave{u}}$ elle est une $r{\acute{e}}alit{\acute{e}}$ $v{\acute{e}}cue$, et aussi la $pens{\acute{e}}e$ qui ${\acute{e}}claircit$ la sagesse des philosophes antiques ${\grave{a}}$ la perspective $chr{\acute{e}}tienne$ qui dit philosopher, c'est apprendre ${\grave{a}}$ mourir.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.31-32
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• 2004