• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1650-1653
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• 2007

We demonstrate fluorescent green organic lightemitting diodes employing a rhenium oxide ($ReO_3$)-doped N,N-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) hole transporting layer (HTL). The devices exhibit significantly reduced driving voltages as well as prolonged lifetime. Details of $ReO_3$ doping effects are described in terms of charge transfer complex and stabilization of HTL morphology.

• Bulletin of the Korean Chemical Society
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• v.24 no.4
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• pp.504-506
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• 2003

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.751-756
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• 2016

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1311-1314
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• 2008

We have developed new electrical dopants of rhenium oxide ($ReO_3$) and cupper iodide (CuI) as p-dopants and rubidium carbonate ($Rb_2CO_3$) as an n-dopant, respectively. $ReO_3$ has advantage of low temperature evaporation (about $300^{\circ}C$) with enhanced device stability. Various kinds of high performance organic light emitting diodes have been realized, including bottom emission, tandem, and top-emission OLEDs.

• Analytical Science and Technology
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• v.22 no.5
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• pp.415-421
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• 2009

A study was performed to investigate the isobaric effects of impurities in isotope measurement of gadolinium by TIMS. Especially, the ratio of $^{155}Gd/^{158}Gd$ showed the higher value than that of natural gadolinium and also decreased as the measuring time increased. This phenomenon is considered to be due to the oxide form of La ($LaO^+$, m/z=155) causing to create a serious bias on the measurement of $^{155}Gd$ abundance by La as an impurity, and due to $LaO^+$ produced more than the $Gd^+$ in the early time which disappears as the time goes on because of lower melting point and ionization potential of La than Gd. Although isobaric effects from Ba($BaO^+$), Ce($CeO^+$), Sm($SmO^+$), La($LaO^+$), and $K_4{^+}$(m/z=156)-cluster were detected even when blank rhenium filaments were used, these could be avoided by preconditioning(baking out) the filament. And we found that the measurement of $GdO^+$ instead of $Gd^+$ is more suitable in avoiding the isobaric effect from impurities such as La, Ce and Ba in the measurement of Gd isotope only in case of absence or extremely low level of Yb, Sm, Dy, Er, Lu.