• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.50-58
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• 2000

A Mach-Zehnder type $Ti:LiNbO_3$ optical modulator with a grooved $SiO_2$ buffer layer, was evaluated in terms of an electrode structure. The finite element method was performed to find out the optinum design parameters of electrodes. characteristic impedance ($Z_o$), MW effective index ($N_{eff}$) and attenuation constant ($a_o$)of fabricated traveling-wave electrodes were measured and compared with those obtained by the simulation expectation. For an optical modulator with 11${\mu}m$thick electrodes and a grooved $SiO_2$ buffer layer, the 3dB bandwidth based on the RF measurement results turned out to be 18GHz.

• Journal of Korean Neurosurgical Society
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• v.37 no.2
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• pp.105-111
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• 2005

Objective: Tremor, either essential tremor or Parkinsonian tremor, has been effectively and safely treated by lesioning the ventral intermediate(Vim) nucleus of the thalamus with or without mircroelectrode recording. The authors evaluate the treatment outcome of sixteen tremor patients who had been treated with thalamotomy without microelectrode. Methods: Between September, 2001, and December, 2003, sixteen tremor patients were treated with thalamotomy without microelectrode recording. Twelve patients suffered from Parkinsonian tremor and four patients were essential tremor patients. The male to female ratio was 1.6 to 1 with median age of 59.6 years (range; 39-74 years). Under local anesthesia, a 3mm hole was made using a hand-held twist drill, and the dura mater was penetrated with a 1.2mm sharp drill beat. Radiofrequency(RF) electrode was placed in the Vim nucleus of thalamus. With intraoperative macrostimulation, RF lesion was made. Postoperative CT scan and/or MR imaging was performed to confirm the localization of the target lesioned. Preoperative and postoperative tremor was evaluated with simple tremor severity scale and the development of complications related with the procedure was closely reviewed at the immediate postoperative period and the last follow-up. Results: It produces immediate relief in up to 98.4% of the patients. There were no development of complications related with procedure, all patients discharged one or two days after surgery. Conclusion: Vim thalamotomy without microelectrode recording is a safe and effective procedure to control the tremor with minimal morbidity. Intraoperative macroelectrode stimulation safely localizes the Vim nucleus target of the thalamus for the treatment of patients with tremor.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• Journal of Advanced Navigation Technology
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• v.25 no.1
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• pp.90-95
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• 2021

In this paper, the design method for a high-sensitivity compact resonator for chipless RFID tags is proposed. Proposed high-sensitivity compact resonator uses an interdigital-capacitor structure instead of a capacitor-shaped strip structure in a conventional ELC resonator. The length of the electrode plate of the IDC structure is longer than that of the conventional capacitor-shaped structure, resulting in a larger equivalent capacitance of the resonator. This can lower the resonant peak frequency of the RCS characteristic. Two resonators with the same length of the square loop and the width of the strip are fabricated on an RF-301 substrate with a thickness of 0.8 mm. The experiment results show that the resonant peak frequency and value of the bistatic RCS for the ELC resonator were 4.305 GHz and -30.39 dBsm, whereas those of the proposed IDC resonator were 3.295 GHz and -36.91 dBsm. Therefore, the size of the resonator is reduced by 23.5% based on the measured resonant peak frequency of the RCS characteristic.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.