• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.291-294
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• 1998

The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.802-807
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• 2001

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.826-829
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.183-187
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_2$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_3$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_2$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_2$ and 16 % Ar with the $CHF_3$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.297-301
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• 2006

Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.291-291
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• 2010

The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].