• Title/Summary/Keyword: rf-electrode

Search Result 419, Processing Time 0.035 seconds

Ferroelectrical Properties of SBT Capacitors with various Annealing Atmosphere (다양한 열처리 분위기에 따른 SBT 커패시터의 강유전체 특성)

  • Cho, Choon-Nam;Oh, Young-Choul;Kim, Jin-Sa;Choi, Woon-Shik;Kim, Chung-Hyeok;Park, Young-Pil;Hong, Jin-Woong;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.05d
    • /
    • pp.72-76
    • /
    • 2003
  • The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

  • PDF

Properties wRh Ca Substitutional Contents of $SrTiO_{3}$ Ceramic Thin Film ($SrTiO_{3}$ 세라믹 박막의 Ca 치환량에 따른 특성)

  • Kim Jin-Sa;Oh Yong-Cheol;Cho Choon-Nam;Shin Cheol-Gi;Song Min-Jong;Choi Woon-Shik;Park Min-Sun;Kim Chung-Hyeok
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.54 no.9
    • /
    • pp.397-402
    • /
    • 2005
  • The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

The effect of dye coloring temperature on the dye-sensitized solar cells (염료감응형 태양전지의 염료 착색 온도의 영향에 관한 연구)

  • Lee, Kyoung-Jun;Seo, Hyun-Woong;Son, Min-Kyu;Kim, Jeong-Hoon;Kim, Hee-Je
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2008.05a
    • /
    • pp.422-424
    • /
    • 2008
  • A serious problem of the 21st century is the supply of energy resources. Reserves of fossil fuels are facing depletion: renewable energy resources must be developed in this era. Dye sensitizedsolar cells(DSC) have been very economical and easy method to convert solar energy to electricity. DSC can reach low costs in future outdoor power applications. However, to commercialize the DSC, there are still many shortages to overcome. When the DSC is commercialized in the near future, the productivity is an important factor. In the process of soaking in a dye, it usually takes $12\sim24$ hours. In this study, we varied the dye coloring temperature from $0^{\circ}C$ to $60^{\circ}C$. At the temperature of $40^{\circ}C$, DSC cell showed the best performance. We also expect the reduction of the time soaking in a dye. Counter electrode surface of DSC is deposited by RF magnetron sputtering under the conditions of Ar $2.8{\times}10^{-3}$ torr, RF power of 120W and substrate temperature of $100^{\circ}C$.

  • PDF

Ferroelectric and Leakage current Properteis of SBT Capacitor with post-annealing Temperature (후속 열처리에 따른 SBT 캐패시터의 강유전 특성과 누설전류 특성)

  • 오용철;조춘남;김진사;신철기;박건호;최운식;김충혁;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.07a
    • /
    • pp.668-671
    • /
    • 2001
  • The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.

  • PDF

Electric Properties of SBT Thin Films with various Annealing Conditions (다양한 열처리 조건에 따른 SBT 박막의 전기적 특성)

  • Cho, C.N.;Kim, J.S.;Oh, Y.C.;Shin, C.G.;Park, G.H.;Choi, W.S.;Kim, C.H.;Hong, J.U.;Lee, J.U.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.589-592
    • /
    • 2002
  • The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

  • PDF

Electrical characteristic of PZT thin film deposit by Rf-magnetron sputtering as Pb excess ratio of target (Sputtering법으로 성장한 PZT 박막의 Target의 Pb Excess에 따른 전기적 특성에 관한 연구)

  • Lee, Kyu-Il;Kang, Hyun-Il;Park, Young;Park, Ki-Yeub;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.570-573
    • /
    • 2002
  • Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

  • PDF

Fatigue Properties of SBT capacitor with annealing temperatures (열처리 온도에 따른 Pt/SBT/Pt 커패시터의 피로특성)

  • Cho, C.N.;Kim, J.S.;Oh, Y.C.;Shin, C.G.;Choi, W.S.;Kim, C.H.;Song, M.J.;Lee, J.U.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.09a
    • /
    • pp.5-8
    • /
    • 2001
  • The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

  • PDF

Polarization properties of SBT capacitor with annealing temperatures (열처리에 따른 SBT 캐패시터의 분극특성)

  • Cho, C.N.;Kim, J.S.;Shin, C.G.;Chung, I.H.;Lee, S.G.;Lee, D.G.;Jung, D.H.;Kim, C.H.;Lee, J.U.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.09a
    • /
    • pp.9-12
    • /
    • 2001
  • The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

  • PDF

Frequency response characteristics of PZT pressure sensor using three dimensional LTCC substrates (3차원 LTCC 기판을 이용한 PZT 압력센서의 주파수 응답 특성)

  • Hur, Won-Young;Lee, Kyung-Chun;Hwang, Hyun-Suk;Lee, Tae-Yong;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2010.06a
    • /
    • pp.204-204
    • /
    • 2010
  • A development of device with reduced size and improved sensitivity is highly impotant Pb(Zr,Ti)$O_3$ thin films are widely used both to make actuator and sensor due to their high sensitivity and low cost. In this study, the feasibility of a piezoelectric presssure sensors based on hybrid low-temperaute co-fired ceramic (LTCC) technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. PZT thin films were successfully prepared on between top and bottom Au electrode with LTCC substrates using RF magnetron sputtering. In addition, The frequency response characteristics of the sensor under varing pressure has been analysed. by Network Analyser (HP-8722D). A frequency shift range has been obseved from 1.7GHz to 1.8GHz with a good linearity for applied pressure from 0 psi up to 25 psi.

  • PDF

The effect of dye coloring temperature on the dye-sensitized solar cells (염료감응형 태양전지의 염료 흡착 온도의 영향에 관한 연구)

  • Lee, Kyoung-Jun;Kim, Jeong-Hoon;Hong, Ji-Tae;Son, Min-Kyu;Seo, Hyun-Woong;Kim, Hee-Je
    • Proceedings of the KIEE Conference
    • /
    • 2008.07a
    • /
    • pp.1279-1280
    • /
    • 2008
  • A serious problem of the 21st century is the supply of energy resources. Reserves of fossil fuels are facing depletion: renewable energy resources must be developed in this era. Dye sensitized solar cells(DSC) have been very economical and easy method to convert solar energy to electricity. DSC can reach low costs in future outdoor power applications. However, to commercialize the DSC, there are still many shortages to overcome. When the DSC is commercialized in the near future, the productivity is an important factor. In the process of soaking in a dye, it usually takes 12${\sim}$24 hours. In this study, we varied the dye coloring temperature from 0$^{\circ}C$ to 60$^{\circ}C$. At the temperature of 40$^{\circ}C$, DSC cell showed the best performance. We also conducted the time variant experiment to reduce the manufacturing time. Counter electrode surface of DSC is deposited by RF magnetron sputtering under the conditions of Ar $2.8{\times}10^{-3}torr$, RF power of 120W and substrate temperature of 100$^{\circ}C$.

  • PDF