• Title/Summary/Keyword: rf-electrode

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Multi-hole RF CCP 방전에서 방전 주파수가 미치는 영향

  • 이헌수;이윤성;서상훈;장홍영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.145-145
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    • 2011
  • Recently, multi-hole electrode RF capacitively coupled plasma discharge is being used in the deposition of microcrystalline silicon for thin film solar cell to increase the speed of deposition. To make efficient multi-hole electrode RF capacitively coupled plasma discharge, the hole diameter is to be designed concerning the plasma parameters. In past studies, the relationship between plasma parameters such as pressures and gas species, and hole diameter for efficient plasma density enhancement is experimentally shown. In the presentation, the relationship between plasma deriving frequency and hole diameter for efficient multi-hole electrode RF capacitively coupled plasma discharge is shown. In usual capacitively coupled plasma discharge, plasma parameter, such as plasma density, plasma impedence and plasma temperature, change as frequency increases. Because of the change, the optimum hole diameter of the multi-hole electrode RF capacitively coupled plasma for high density plasma is thought to be modified when the plasma deriving frequency changes. To see the frequency effect on the multi-hole RF capacitively coupled plasma is discharged and one of its electrode is changed from a plane electrode to a variety of multi-hole electrodes with different hole diameters. The discharge is derived by RF power source with various frequency and the plasma parameter is measured with RF compensated single Langmuir probe. The shrinkage of the hole diameter for efficient discharge is observed as the plasma deriving frequency increases.

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Capacitively Coupled Plasma Source를 이용한 Etcher의 상부 전극 온도 변화에 따른 Etch 특성 변화 개선 (Improvement of Repeatability during Dielectric Etching by Controlling Upper Electrode Temperature)

  • 신한수;노용한;이내응
    • 한국진공학회지
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    • 제20권5호
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    • pp.322-326
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    • 2011
  • 상부 전극에 RF power 가 직접 인가되는 capacitively coupled plasma source를 이용한 oxide layer etching 공정은 현재 반도체 제조 공정에서 매우 유용하게 사용되고 있는 방식이다. 그러나 디바이스의 사이즈가 점점 작아지면서 공정을 진행하기 위한 RF power도 커지고, plasma ignition 되는 electrode 사이의 간격도 점점 좁아지는 기술적 변화가 이루어지고 있다. 이러한 H/W의 변화에 따라 예상치 못한 문제들로 공정을 적용하는데 많은 문제점이 발생하고 있는데, 공정 진행 시에 plasma의 영향으로 인한 electrode의 온도 변화도 그 중 하나이다. 이러한 온도 변화로 인해 wafer to wafer의 공정 진행 결과가 서로 다르게 나타나게 하는 문제가 야기되고 있다. 아래의 내용에서는 상부 electrode의 온도 변화에 따른 etch 특성을 연구하고, 이를 개선할 수 있는 방법에 대해 논하고자 한다.

박막 태양전지용 투명 전극을 위한 Ga 도핑된 ZnO의 RF 전력에 따른 구조 및 전기 특성 변화 (Effect of RF Power on Structural and Electrical Properties of Ga-Doped ZnO for Transparent Electrode of Thin Film Solar Cells)

  • 손창식
    • 한국재료학회지
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    • 제21권4호
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    • pp.202-206
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    • 2011
  • We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.

Effects of 27.12 MHz Radio Frequency on the Rapid and Uniform Tempering of Cylindrical Frozen Pork Loin (Longissimus thoracis et lumborum)

  • Choi, Eun Ji;Park, Hae Woong;Yang, Hui Seon;Kim, Jin Se;Chun, Ho Hyun
    • 한국축산식품학회지
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    • 제37권4호
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    • pp.518-528
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    • 2017
  • Quality characteristics of frozen cylindrical pork loin were evaluated following different tempering methods: 27.12 MHz curved-electrode radio frequency (RF) at 1000 and 1500 W, and forced-air convection (FC) or water immersion (WI) at $4^{\circ}C$ and $20^{\circ}C$. The developed RF tempering system with the newly designed curved-electrode achieved relatively uniform tempering compared to a parallel-plate RF system. FC tempering at $4^{\circ}C$ was the most time-consuming process, whereas 1500 W RF was the shortest. Pork sample drip loss, water holding capacity, color, and microbiological quality declined after WI tempering at $20^{\circ}C$. Conversely, RF tempering yielded minimal sample changes in drip loss, microstructure, color, and total aerobic bacteria counts, along with relatively uniform internal sample temperature distributions compared to those of the other tempering treatments. These results indicate that curved-electrode RF tempering could be used to provide rapid defrosting with minimal quality deterioration of cylindrical frozen meat block products.

상대전극을 스퍼터링 증착한 염료 감응형 태양전지의 새로운 디자인 (The New Design of Dye-Sensitized Solar Cell Adopted by Sputter Deposition of Counter Electrode)

  • 김희제;송건주;전진안;이동윤;김휘영;최진영
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.154-157
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    • 2006
  • The counter electrode widely used in DSCs (Dye-sensitized Solar Cells) is constructed of conducting glass substrates coated with Pt films, where the platium acts as a catalyst. Pt counter electrodes in DSCs are one important component. It is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt counter electrode surface of DSC is deposited by reactive RF magnetron sputtering under the conditions of Ar 5mtorr, RF power of 120w and substrate temperature of $100^{\circ}C$. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. And this paper shows our recent results and technology to fabricate the new designed cell with Pt electrodes deposited by sputtering method. We have achieved fill factor 65% and photoelectric conversion efficiency around 2.6% as the best results of new designed DSCs structure.

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Ru/$RuO_2$전극에 성장한 PZT박막의 특성에 관한연구 (Properties of sputtering PZT thin film on the Ru/$RuO_2$electrode)

  • 강현일;최장현;이종덕;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.717-720
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    • 2001
  • Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

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Influence of RF Magnetron Sputtering Condition on the ZnO Passivating Layer for Dye-sensitized Solar Cells

  • Rhee, Seung Woo;Choi, Hyung Wook
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.86-89
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    • 2013
  • Dye-sensitized solar cells have a FTO/$TiO_2$/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the $TiO_2$/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different $O_2$:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:$O_2$ ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes.

Aging Properties of SBT Thin Films Prepared by RF Magnetron Sputtering Method

  • Cho, C.N.;Kim, J.S.;Oh, Y.C.;Shin, C.G.;Choi, W.S.;Kim, C.H.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.474-475
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    • 2007
  • The $Sr_{0.8}Bi_{2.2}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The aging properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The dielectric constant and leakage current density with Pt electrode is 340 and $6.81{\times}10^{-10}\;A/cm^2$ respectively. The maximum remanent polarization and the coercive electric field with Pt electrode are $12.40{\mu}C/cm^2$ and 30kV/cm respectively.

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BST 박막의 비대칭전극재료에 따른 누설전류특성 (The Leakage Current Properties of BST thin films with Unsymmetrical Electrode Materials)

  • 전장배;김덕규;박영순;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.329-332
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    • 1999
  • In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

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페라이트 형상에 따른 둥근형 무전극 램프의 의존성 (Dependence of Round type electrodeless lamp according to Ferrite shape)

  • 김남군;양종경;이주호;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.465-466
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    • 2007
  • In electrode-less lamp, The key point in creating an efficient light source based on RF discharge is to minimize the RF power loss in the RF coupler which for Anderson's type of RF lamp is due to losses in the ferrite core. This loss depends on the particular ferrite material, its size, geometry, frequency in this kind of inductive lamp shows that the correct choice of discharge current has a crucial effect on the core loss. In this study, we measured Ferrite temperature in normal state, then analyzed electrical and optical characteristics according to ferrite shape. We were able to know that was ferrite of the antenna had relate closely with temperature and luminous of the lamp. Also we appraised temperature and electrical, optical properties during turn on the lamp.

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