• 한국세라믹학회지
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• 제43권1호
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.342.2-342.2
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• 2014

IZO, ITO, ITO 등의 투명전극들 중 Indium Tin Oxide (ITO) 다른 전극에 비해 높은 광투과도와 낮은 저항으로 인하여 다양한 부분에서 널리 이용되고 있다. 본 연구에서는 우수한 투과도의 멀티 layer 단열 창호를 위한 film 개발을 위해 RF magnetron system을 이용하여 Sodalime Glass와 polyethylene terephthalate (PET) substrate에 ITO를 증착함으로써 전기적 광학적 특성을 조사하였다. 실험은 power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다. Power는 100 Watt 늘려가며 진행하였고 O2 유량의 변화에 따라 투과도와 면저항, 굴절률 특성이 달라짐을 확인할 수 있었다. O2의 유량에 따라 면저항이 줄어들다가 어느 정도 이상이 되면 급격히 증가함을 확인할 수 있었다. Working Pressure 변화에 따른 전기적 광학적 특성 또한 확인 하였다.

• 수산해양기술연구
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• 제29권4호
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• pp.272-278
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• 1993

The trimethylamine-sensing characteristics of ZnO based thin film semiconductors and the sensitivity enhancement by squttering conditions have been investigated to develop a new type sensor for detecting fish freshness. The sensor fabricated with a 300nm of ZnO thin film with 4 wt% Al sub(2) O sub(3) and 1 wt% TiO sub(2) exhibited the highest sensitivity of 155 at 30$0^{\circ}C$ of working temperature and to the 240 ppm TMA gas. Deposition of ZnO thin film using a RF magnetron sputter was carried out at a pressure of 10 super(-2) Torr in pure oxygen gas with an RF power of 100W. The sensor exhibited a large response to the actual gases produced by a mackerel at an early stage of decomposition.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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• pp.393-394
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• 2007

In this study, to minimize the above effect Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as Ar/$O_2$ gas ratios, RF power, substrate temperature, chamber prsssure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, rocking curve and Alpha-step were performed. SAW filters were fabricated to evaluate the feasibility of ZnO thin film as a piezoelectrical materials and the processes of ZnO SAW filters using etch and lift-off were compared.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.131-135
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• 2003

Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, $\theta/2\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity, and surface roughness highly depended on $Ar/O_2$ gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of $9{\times}10^7{\Omega}cm$ was obtained at a working pressure of 10 mTorr with $Ar/O_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with $Ar/O_2$=50/50 showed the excellent roughness value of $28.7{\AA}$.

• 한국진공학회지
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• 제19권1호
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• pp.58-65
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• 2010

먼저 RF 마그네트론 스퍼터링법을 이용하여 사파이어 기판 위에 AlN 박막을 증착하였다. AlN 공급원으로는 분말소결된 AlN 타겟을 적용하였다. 플라즈마 파워를 50에서 110 W로 증가시켰을 때 AlN 층의 두께는 선형적으로 증가하였다. 그러나 동작압력을 3에서 10 mTorr로 증가시켰을 때는 동작기체인 아르곤 양이 증가함에 따라 AlN 타겟으로부터 스퍼터링되어 나온 AlN 입자들의 평균자유행정의 거리가 감소하기 때문에 AlN 층의 두께는 약간 감소하였다. 질소 기체를 아르곤과 섞어주었을 때는 질소의 낮은 스퍼터링 효율에 의해서 AlN의 두께는 크게 감소하였다. 다음으로는 ZnO 형판 위에 AlN를 증착하였다. 그러나 700도 이상의 열처리에 의해서 AlN와 ZnO의 계면이 약간 분리되어 계면의 열적 안정성이 낮다는 결과를 얻었다. 게다가 스퍼터링으로 증착한 AlN 박막의 나쁜 결정성으로 인하여 700도에서 MOCVD의 반응기 기체인 수소와 암모니아에 의해서 AlN 밑의 ZnO 층이 분해되는 현상도 관찰하였다. 그리고 900도 이상에서는 ZnO가 완전히 분해되어 AlN 박막이 완전히 분리되었다.