• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• 열처리공학회지
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• 제32권2호
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• pp.74-78
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• 2019

$Zn_2SnO_4$ thin films were deposited on quartzs substrates by using radio-frequency magnetron sputtering system. Thermal treatments at various temperatures were performed to evaluate the effect of annealing temperatures on the properties of $Zn_2SnO_4$ thin films. Surface morphologies were examined by using field emission-scanning electron microscopy and showed that sizes of grains were slightly increased and grain boundaries were clear with increasing annealing temperatures. The deposited $Zn_2SnO_4$ thin films on quartzs substrates were amorphous structures and no distinguishable crystallographic changes were observed with variations of annealing temperatures. The optical transmittance was improved with increasing annealing temperatures and was over 90% in the wavelength region between 350 and 1100 nm at the annealing temperature of $600^{\circ}C$. The optical energy bandgaps, which derived from the absorbance of $Zn_2SnO_4$ thin films, were increased from 3.34 eV to 3.43 eV at the annealing temperatures of $450^{\circ}C$ and $600^{\circ}C$, respectively. As the annealing temperature was increased, the electron concentrations were decreased. The electron mobility was decreased and resistivity was increased with increasing annealing temperatures with exception of $450^{\circ}C$. These results indicate that heat treatments at higher annealing temperatures improve the optical and electrical properties of rf-sputtered $Zn_2SnO_4$ thin films.

• 대한금속재료학회지
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• 제48권4호
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• pp.320-325
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• 2010

NiO thin films were deposited by radio frequency magnetron sputtering on glass substrates. The processing variables of the oxygen content, sputtering power, and pressure were varied to investigate the electrical properties and surface morphology of NiO films. It was found that the resistivity of NiO films at $1.22{\times}10^2{\Omega}cm$ (2.5% $O_2$ in Ar gas) was greatly reduced to$ 2.01{\times}10^{-1}$ ${\Omega}cm$ (100% oxygen) under a typical sputtering condition of 6 mTorr and 200 watts. In an effort to observe the resistivity variances, the sputtering power was varied from 80 to 200 watts at 6 mTorr with 100% $O_2$. However, the resistivity of the NiO films changed in the range of $10^{-1}-10^{-2}$ ${\Omega}cm$. The dependence on the sputtering power was therefore found to be weak in this experiment. When the sputtering pressure was changed from 3 to 60 mTorr at 200 watts with 100% $O_2$, the resistivity of the NiO films showed the lowest value of $5.8{\times}10^{-3}$ ${\Omega}cm$ at 3 mTorr, which is close to that of commercial ITO films (${\sim}10^{-4}$ ${\Omega}cm$). As the sputtering pressure increased, the resistivity also increased to 4.67 cm at 60 mTorr. The surface morphology of the NiO films was also checked by Atomic Force Microscopy. It was found that the RMS surface roughness values ranged from 0.6 to 1.5 nm and thtthe dependence on the sputtering parameters was weak.

• 대한금속재료학회지
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• 제47권9호
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• pp.591-596
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• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• 대한금속재료학회지
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• 제47권1호
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• pp.44-49
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• 2009

본 연구에서는 2인치 ITO의 타깃으로 ITO박막을 성장시킨 후 RTA 처리로 인한 전기적, 광학적 특성의 변화를 조사하였으며, RTA 처리된 ITO 박막을 이용하여 플라즈마 응용 사인보드를 제작 및 구동하였다. RTA공정으로 열처리한 ITO는 투과도는 증가하며, 비저항은 감소함을 관찰하였으며, 투과도의 증가는 RTA로 인한 결정성의 증가로 인한 결과이고, 비저항의 감소는 결정성의 증가와 더불어 치환형 주석의 원자수가 증가하였다고 사료된다. ITO를 이용하여 사인보드 제작시 방전cell의 압력은 3-5 Torr가 적당함을 알 수 있었으며, 전극 간격을 조절하여 120 V 정도의 낮은 플라즈마 개시 전압을 갖는 플라즈마 응용 사인보드를 성공적으로 제작 할 수 있었다.

• 한국표면공학회지
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• 제54권3호
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• pp.119-123
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• 2021

SnO₂ single layer and SnO₂/Ag/SnO₂ (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO₂ films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×10⁴ Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO₂ films enhances the opto-electrical performance without substrate heating or annealing process.

• 센서학회지
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• 제30권6호
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• pp.446-450
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• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.

• 센서학회지
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• 제30권4호
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• pp.250-254
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• 2021

A highly sensitive and selective non-dispersive infrared (NDIR) carbon dioxide gas sensor requires achieving high transmittance and narrow full width at half maximum (FWHM), which depends on the interface of the optical filter for precise measurement of carbon dioxide concentration. This paper presents the design, simulation, and fabrication of a Fabry-Perot filter based on a distributed Bragg reflector (DBR) for a low-cost NDIR carbon dioxide sensor. The Fabry-Perot filter consists of upper and lower DBR pairs, which comprise multilayered stacks of alternating high- and low-index thin films, and a cavity layer for the resonance of incident light. As the number of DBR pairs inside the reflector increases, the FWHM of the transmitted light becomes narrower, but the transmittance of light decreases substantially. Therefore, it is essential to analyze the relationship between the FWHM and transmittance according to the number of DBR pairs. The DBR is made of silicon and silicon dioxide by RF magnetron sputtering on a glass wafer. After the optimal conditions based on simulation results were realized, the DBR exhibited a light transmittance of 38.5% at 4.26 ㎛ and an FWHM of 158 nm. The improved results substantiate the advantages of the low-cost and minimized process compared to expensive commercial filters.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.