• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
• /
• v.12B no.1
• /
• pp.37-43
• /
• 2002

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5㎾ prototype boost converter operating at 40KHz.

• Proceedings of the KIPE Conference
• /
• 2003.11a
• /
• pp.95-98
• /
• 2003

A ZVT PWM Boost Converter is proposed to reduce current stresses and conduction losses of main switch in a conventional circuit. By attaching resonant inductor Lr1 in parallel with capacitor Cr, the resonant circulating current is diverted to the additional component and then the main switch is subjected to minimum current stresses same as those in their PWM counterparts. Moreover, the operation of the auxiliary switch in a half wave mode to prevent reverse resonant energy from freewheeling can be able to lessen the conduction losses. The operation principles of the proposed converters are analyzed using the PWM boost converter topology as an example. Theoretically analysis and experimental results verify the validity of the boost converter topology with the proposed circuit.

• Journal of Power Electronics
• /
• v.1 no.2
• /
• pp.71-77
• /
• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of DC to DC PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of DC to DB PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype converter operating at 40 kHz.

• Journal of information and communication convergence engineering
• /
• v.3 no.4
• /
• pp.179-183
• /
• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.13 no.4
• /
• pp.311-318
• /
• 2008

This paper proposes synchronous bidirectional DC-DC converter applying soft-switching technique. The proposed converter integrates two advantages which are conduction loss minimization and switching loss elimination by applying interleaved synchronous buck and ZVT-cell with a single resonant inductor. ZVS is guaranteed for wide load range in CCM(Continuous Conduction Mode) as well as wide output voltage range by current injection method. Also, reverse recovery effects of body diode can be minimized. In addition, it is possible to significantly reduce diode drop voltage occurred during dead time of conventional synchronous buck converter. The validity of the proposed converter is verified through experimental results.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.25 no.3
• /
• pp.204-212
• /
• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.27 no.2
• /
• pp.85-91
• /
• 2022

This study proposes a high efficiency bridgeless Power Factor Correction (PFC) converter with improved common mode noise characteristics. Conventional PFC has limitations due to low efficiency and enlarged heat sink from considerable conduction loss of bridge diode. By applying a Common Mode (CM) coupled inductor, the proposed bridgeless PFC converter generates less conduction loss as only a small magnetizing current of the CM coupled inductor flows through the input diode, thereby reducing or removing heat sink. The input diode is alternately conducted every half cycle of 60 Hz AC input voltage while a negative node of AC input voltage is always connected to the ground, thus improving common mode noise characteristics. With the aim to improve switching loss and reverse recovery of output diode, the proposed circuit employs Critical Conduction Mode (CrM) operation and it features a simple Zero Current Detection (ZCD) circuit for the CrM. In addition, the input current sensing is possible with the shunt resistor instead of the expensive current sensor. Experimental results through 480 W prototype are presented to verify the validity of the proposed circuit.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1111-1113
• /
• 1995

To improve latch up characteristics of IGBT, this paper proposed new structure with reverse channel. IGBT proposed by this paper were designed on SOI substrate, $p^+$-substrate, and $n^+$-substrate, respectively. As a result of the simulation, we had achieved high latch up voltage and high conduction current density at IGBT with proposed structure. Latch up voltage of Conventional IGBT was 2.5V but IGBT with proposed structure was latched up at $5{\sim}94V$, respectively. And was showed high conduction current desity($10^4{\sim}10^7A/cm^2$)

• Proceedings of the KIPE Conference
• /
• 2011.11a
• /
• pp.44-45
• /
• 2011

Research on photovoltaic (PV) generation is taking a lot of attention due to its infinity and environment-friendliness with decrease of price per PV cell. While central inverters connect group of PV modules to utility grid in which maximum power point tracking (MPPT) for each module is difficult, micro inverter is attached on each module so that MPPT for individual modules can be easily achieved. Moreover, energy generation and consumption efficiency can be much improved by employing direct current (DC) distribution system. In this paper, a digitally controlled PV micro converter interfacing PV to DC distribution system is proposed. Boundary conduction mode (BCM) is utilized to achieve zero voltage switching (ZVS) of active switch and eliminate reverse recovery problem of passive switch. A 120W prototype boost PV micro converter is implemented to verify the feasibility and experimental results show higher than 98% efficiency at peak power and 97.29% of European efficiency.

• Proceedings of the KIPE Conference
• /
• 2005.07a
• /
• pp.549-551
• /
• 2005

Bidirectional DC/DC converters allows transfer of power between two dc sources, in either direction. Due to their ability to reverse the direction of flow of power, they are being increasingly used in many applications such as battery charger/dischargers, dc uninterruptible power supplies, electrical vehicle motor drives, aerospace power systems, telecom power supplies, etc. This paper proposes a new bidirectional Sepic/zeta converter. It has low swicthing loss and low conduction loss due to auxiliary communicated circuit and synchronous rectifier operation, respectively. Because of positive and buck/boost-like DC voltage transfer function(M=D/1-D), the proposed converter is very desirable for use in distributed power system . The proposed converter also has both transformerless version and transformer one.