• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.421.2-421.2
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• 2014

We report on the growth of ZnO nanorods (NRs) grown on graphite and silicon substrates via an all-solution process and characteristics of their heterojunctions. Structural investigations indicated that morphological and crystalline properties were not significantly different for the ZnO NRs on both substrates. However, optical properties from photoluminescence spectra showed that the ZnO NRs on graphite substrate contained more point defects than that on Si substrate. The ZnO NRs on both substrates showed typical rectification properties exhibiting successful diode formation. The heterojunction between the ZnO NRs and the graphite substrate showed a Schottky diode characteristic and photoresponse under ultraviolet illumination at a small reverse bias of -0.1 V. The results showed that the graphite substrate could be a good candidate for a Schottky contact electrode as well as a conducting substrate for electronic and optoelectronic applications of ZnO NRs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.333.1-333.1
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• 2014

이번 연구는 비정질 인듐-갈륨-아연-산화막(IGZO)을 이용한 박막트랜지스터(TFT)의 열처리 분위기에 따른 전기적 특성을 비교하는 것이다. IGZO의 열처리 시 널리 용하는 Air 분위기 뿐만 아니라, 순수한 N2 및 O2 분위기에서 전기적 특성(Ion/Ioff, S.S 기울기 및 V등)이 어떻게 변하는지를 1차적으로 비교 분석하며, 추후 심화 단계로 gate bias stress가 TFT에 미치는 영향을 확인하였다. 우선 열처리 분위기에 따른 특성을 확인하였다. N2분위기의 경우 다른 분위기와 아주 조금의 차이는 있으나 열처리를 하지 않은 경우를 제외한 나머지는 전체적으로 유사하였다. 좀 더 자세히 보면 두번째의 경우 Forward와 Reverse의 경우 전체적으로 모두 유사해 보였고, 특히 N2분위기의 경우 가장 안정적임을 알 수 있었다. 또 Stress Time에 따른 V의 변화량을 측정하였는데 역시 열처리를 하지 않은 경우에는 시간이 지날수록 변화가 크게 나타나 안정성에 문제가 있었다. 하지만 Air, N2, O2분위기에서는 약간의 미세한 차이는 있으나 전체적으로 유사하였다. 마지막으로 IGZO의 특성상 저온열처리를 하는 경우가 많은데 이러한 경우에는 열처리 시간에 따라 Stress Time의 변화에 따른 V차이를 확인하였다. 실험 결과 열처리 시간이 길어질수록 Stress Time에 따른 V의 변화가 작게 나타났다. 이를 통해 저온의 경우 약 5~8시간의 열처리를 한 경우가 안정적이라는 결론을 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.130-132
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• 2001

We have investigated current-voltage (I-V) characteristics of organic light-emitting diodes based on $TPD/Alq_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from $Alq_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.59-64
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• 1994

The Si-SiO$_2$interface trpas of the degraded short-channel SONOSFET memory devices were investigated using the charge pumping techniques. The degradation of devices with write/erase cycle appeared as the increase of the Si-SiO$_2$interface trap density. In order to determine the capture cross-section of the interface trap. I$\_$CP/-V$\_$GL/ characteristic curves were measured at different temperatures. Also, the spatial distributions of Si-SiO$_2$interface trap were examined by the variable-reverse bias boltage method.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.289-292
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• 2005

New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.121-124
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• 2006

It is widely know that one of the most important tasks is the research of plasma for the purpose o nuclear fusion, is to make a stable confinement of high ${\beta}$ value plasma. And, for making the stable confinement, pinch pl-asma produced by reversed field has been mainly studied yet. Magnetic field has been used to hold plasma at high temperature for a long time. Reverse field has shown unstable process. Using ratio frequency, the author could control the instability of the process and formed a stable erversed field. Inthe experiment let a reversed field configuration from by adding-Bias field in advance.

• Korean Journal of Optics and Photonics
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• v.10 no.3
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• pp.254-258
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• 1999

We propose a simple technique to obtain field-induced absorption changes of an electroabsorption waveguide by using photocurrent generated inside a waveguide. Photocurrent proportional to the absorbed power and displaying Fabry-Perot interference fringes were observed and the field-induced absorption changes were derived from the ratio of resonant and anti resonant currents in the photocurrent spectra. The field-induced absorption change of InGaAsP waveguide for 1.5V reverse bias voltage at 1.55 $\mu\textrm{m}$ was determined to be $~157\cm^{-1}$.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.166-170
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• 2012

This paper presents a tunable composite right/left-handed (CRLH) delay line for a delay line discriminator that linearizes modulated frequency sweep in a frequency modulated continuous wave (FMCW) radar transmitter. The tunable delay line consists of 8 cascaded unit cells with series varactor diodes and shunt inductors. The reverse bias voltage of the varactor diode controlled the group delay through its junction capacitance. The measured results demonstrate a group delay of 8.12 ns and an insertion loss of 4.5 dB at 250 MHz, while a control voltage can be used to adjust the group delay by approximately 15 ns. A group delay per unit cell of approximately 1 ns was obtained, which is very large when compared with previously published results. This group delay can be used effectively in FMCW radar transmitters.

• Journal of the Korean Institute of Gas
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• v.8 no.1 s.22
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• pp.18-24
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• 2004

This study issues the component's ratings when low powered do intrinsic safety instrumentations using in flammable atmospheres. Test of reverse bias of zener diode characteristics and ignition characteristics test for power source consist of zener diode and resistor have done using IEC spark test apparatus. With this test, the ratings for zener diode and resistor are calculated and the design method of intrinsically safe power supply system is reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.130-132
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• 2001

We have investigated current-voltage(I-V) characteristics of organic light-emitting diodes based on TPD/Alq$_3$ organics depending on the application of forward-reverse bias voltage. Luminance-voltage characteristics and luminous efficiency were measured at the same time when the I-V characteristics were measured. We have observed that the I-V characteristics shows a current mxima at low voltage, which is possibly not related to the emission from Alq$_3$.