• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.1-5
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• 1997

Highly sensitive pyroelectric IR sensors were fabricated with La-modified $PbTiO_{3}(PLT)$ thin plates compensating for piezoelectric effect. The device was fabricated in a dual form by placing two PLT cells, each of $1{\times}2\;mm^{2}$, side by side with appropriate electrode configuration. The dual element sensor had a signal to noise ratio of about 350 that was much larger than that of single element sensors. Further the dual element sensors exhibited excellent pyroelectric properties such as a large voltage responsivity of 2400 V/W, a pyro-coefficient of $4.6{\times}10^{-8}\;C/cm^{2}K$, a voltage figure of merit of $4.2{\times}10^{-11}\;Ccm/J$, and a small thermal time constant of 8.7 msec. It was confirmed through experiments that the dual element sensor was applicable to detect the two-dimensional moving direction of human beings.

• Journal of Oral Medicine and Pain
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• v.23 no.4
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• pp.403-418
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• 1998

The aim of this study was to measure effects of the following items to pain and pain behavior reaction in patients with chronic orofacial pain. Items that contribute to the first factor(Environmental Influences) measure environmental sources of information that may affect illness behavior; Second factro(Loss of Control) measure appraisals and attributions perceived to influence personal views aobut pain; Third factor(Health Care Avoidance) measures a variety of avoidant behaviors; Fouth factor(Past and Current Experiences) measures experiences with treatment); Fifth factor(Physiological Responsivity) measures physiological parameters that are experienced in association with pain; Sixth factor(Thoughts of Disease Progression) measures thoughts regarding the etiology and progression of disease in relation to pain. 150 patients that were consist of 40 male and 110 female were participated in this study. The obtained results of this study were as follows : 1. Environmental influences and loss of control scales were recorded high score in patients with chronic orofacial pain 2. "Physician's descriptions of what your pain will be like" and "Physician's facial expression when they ask about your pain" items from the environmental influences were recorded high score. These results indicated that responsibility of doctro is very important to the pain reaction behavior of patients. Also, items from thoughts regarding the etiology and progression of disease in relation to pain influenced to the pain reaction. 3. There were significant defferences on the "nurses' descriptions of what you pain will be like", "physician's and nurses' facial expression when they ask about your pain", "TV and radio", and "Literature" items from the environmental influences between male and female patients. 4. There were no significant differences on the each scale between arthrogenous and combitnation group and significant correlated with all 6 scales.

• Korean Journal of Optics and Photonics
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• v.23 no.6
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• pp.241-245
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• 2012

Measurements of the optical activity become very important issues in fields related to polymers, optical communications, astronomy, physics and many more. Hence it need to introduce this subject in our regular curriculum. In this experiment, an inexpensive, reliable, motorized polarimeter system which is suitable for undergraduate courses is constructed with PASCO's well-known Science Workshop 750 and a rotational motion sensor and light sensor, and the system is presented along with its experimental formulas. After responsivity of this system was checked by a half wave plate, and some repetitive experiments with 30% sucrose solution at 543.8 nm were performed. Comparing the experimental result with two calculated values from CRC data[1] showed that the specific rotation of the sucrose sample could be strongly suggested to be around +76 deg.cc/g.dm and it was an amply acceptable result for most undergraduate level courses.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.131-131
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• 2003

Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.420-424
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• 1999

In this paper, an optical switching circuit and several types of all-optical transmitter/receiver circuits which are configured with photodiodes, multiple quantum-well(MQW) optical modulators, and field-effect transistors(FETs) were simulated using PSPICE and their results of these are examined and discussed. 20 $\mu\textrm{m}$ ${\times}$ 20 $\mu\textrm{m}$ of window size was used for the optical modulators and 100 $\mu\textrm{m}$ wide FETs with the transconductance value of 55 mS/mm were used for the simulations. Simulation results clearly show that in order for the high speed operation of the all-optical circuits, the size of each device should be minimized to reduce the parasitic capacitance, the circuits should be designed to operate at the wavelength where the resposivity of photodiodes becomes the maximum peak, and the use of short, high-intensity input optical signal beams is very advantageous.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.1-4
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• 2001

We have fabricated and evaluated a new Si pin photodetector for APF optical link. The fabricated device has the $p^{+}$-guard ring around the metal-semiconductor contact and the web patterned $p^{+}$-shallow diffused region in the light absorbing area. From the measurements of electo-optical characteristics under the bias of -5 V, the junction capacitance of 4 pF and the dark current of 180 pA were obtained. The optical signal current of 1.22 $\mu$A and the responsivity of 0.55 A/W were obtained when the 2.2 $\mu$W optical power with peak wavelength of 670 nm was incident on the device. The fabricated device showed the maximum spectral response in a spectrum of 650-700 nm. It is expected that the fabricated device can be very useful for detecting the optical signal in the application of red light optics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.15 no.2
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• pp.123-131
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• 2004

We reviewed four types of Attachment intervention, 1) programs that seek to enhance sensitivity, 2) programs designed to alter parents' representations, 3) programs that provide and enhance social support, and 4) programs designed to enhance maternal mental health and well-being, and Project STEEP(Steps Toward Effective and Enjoyable Parenting). We have learned from the these studies that the emotional sensitivity and responsivity are very important factors for the development and treatment of Attachment relationships and the needs of the parents should also be addressed. Our recommendation for future attachment intervention is to design programs 1) that have the flexibility to meet participants' needs, 2) that involve other important people in the participants' lives, 3) that focus on fostering individual strengths, 4) that begin early, and 5) that are intensive and sufficiently long.