• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.5
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• pp.416-422
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• 2012

This paper proposes a low power-loss current measurement using a resistor and bypass switch. Conventional current sensing method using a resistor has a disadvantage of power loss which degrades the efficiency of the entire systems. On the other hand, proposed measurement technique operating with bypass-switch connected in parallel with sensing resistor can reduce power loss significantly the current sensor. The propose measurement works for discrete-time sampling of current sensing. Even while the analog-digital conversion does not occur at the controller, the sensing voltage across the sensor still causes ohmic conduction loss without information delivery. Hence, the bypass switch bypasses the sensing current with a small amount of power loss. In this paper, a 90[W] prototype hardware has been implemented for photovoltaic MPPT experimental verification of the proposed low power-loss current measurement technique. From the results, it can be seen that PV power observation is successfully done with the proposed method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.2
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• pp.107-111
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• 2018

In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.196-200
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• 2007

In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.349-353
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• 2016

Recently, research on bolometer-type uncooled infrared image sensor which is made for industrial applications has been increasing. In general, it is difficult to calibrate fixed pattern noise (FPN) of bolometer array. In this paper, average-current calibration algorithm is presented for reducing bolometer resistance offset. A resistor which is produced by standard CMOS process, on the average, has a deviation. We compensate for deviation of each resistor using average-current calibration algorithm. The proposed algorithm has been implemented by a chip which is consisted of a bolometer pixel array, average current generators, current-to-voltage converters (IVCs), a digital-to-analog converter (DAC), and analog-to-digital converters (ADCs). These bolometer-resistor array and readout circuit were designed and manufactured by $0.35{\mu}m$ standard CMOS process.

• Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
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• v.9 no.1
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• pp.11-16
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• 1998

Background and Objectives : Electrolarynx has been used as one of the methods of rehabilitation for the laryngectomees. Previous electrolarynx could not alter frequency and intensity simultaneously. This institute developed an electrolarynx named "Evada" using FSR(force sensing resistor) sensor, which can control the frequency(and/or intensity) simultaneously. This study was performed for the normal control and laryngectomees with three types of electrolarynx (Evada, Servox-inton, Nu-vois) to reveal functional characteristics of Evada Materials and Methods : five laryngectomees and five normal adults were made to express there sentences(discriptive sentence, "You stay here" ; question sentence, "You stay here？" ; exclamation sentence, "You!! stay here!"), using three types of electrolarynx. Frequency change and intensity change from first and last vowel was calculated in three sentences and analyzed statistically by paired T-test. Results : The frequency change in the question sentence and exclamation sentence was more prominent in Evada than in Servox-inton and Nu-vois. The intensity change in the question sentence and exclamation sentence was also more prominent in Evada than in Servox-inton and Nu-vois. Conclusions : Evada could control frequency and intensity simultaneously and control degree of frequency(and/or intensity) according to the pressing force into the button. Evada could adjust continuously frequency and intensity during conversation. So, Evada is better in producing intonation and contrastive stress than Nu-vois and Servox-inton.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.148-149
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• 2008

As infrared light is radiated, the CMOS Readout IC (ROIC) for the microbolometer type infrared sensor detects voltage or current when the resistance value in the bolometer sensor varies. One of the serious problems in designing the ROIC is that resistances in the bolometer and reference resistor have process variation. This means that each pixel does not have the same resistance, causing serious fixed pattern noise problems in sensor operations. In this paper, Reference resistor compensation technique was proposed. This technique is to compensate the reference resistance considering the process variation, and it has the same reference resistance value as a bolometer cell resistance by using a comparator and a cross coupled latch.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.56-60
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• 2021

Recently, technologies for internet of things have been rapidly advanced with development of network. Also interest in smart healthcare that informs about motion information of users has been growing. In this paper, a system that is monitoring the weight on both feet by using aduino and FSR(Force Sensitive Resistor) Sensor is implemented. A 4-channel sensor driver module was implemented to measure a more accurate weight value. It is monitoring the weight on both feet by the using an application for either your PC or mobile device. Mobile applications can contribute to reducing human damage by sending messages along with location in emergency situations, such as injuries caused by falls during outdoor activities.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.119-122
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• 2009

As infrared light radiates, the CMOS Readout IC (ROIC) for the microbolometer typed infrared sensor detects voltage or current which is caused by the variation of resistance in the bolometer sensor. A serious problem we may have in designing the ROIC is the value of bolometer and reference resistors will be changed due to process variation. Since each pixel does not have the same value of resistance, fixed pattern noise problems happen during the sensor operations. In this paper, we propose a novel technique to compensate the fluctuation of reference resistance with taking account of process variation. By using a comparator and a cross coupled latch, we will make the value of reference resistor same as the bolometer's.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1027-1032
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• 1996

The auto-illumination controller for office, residence, and so on was studied. The system consists of parts of a power supply, a signal oscillator, a lamp controller and two kinds of sensor. The lamp controller has two thyristors triggered by the IR sensor(SCRI) and CdS sensor(SCR2) respectively, When the illuminance around this system is higher than operating value of its sensor, lamp is turned off automatically. Otherwise, the light of lamp gets dim by CdS sensor. In case IR sensor senses the body heat of people around itself, the illuminance of the lamp gets maximum. The illuminance of the lamp can be changed dimmly by control of the variable resistor (RV) connected with SCR2 in series. The turning - on time of the lamp can be also controlled using a variable resistor(Rt) connected with a signal oscillator in parallel. Changing resistance Rt changes the time constant(.tau.), which triggers the gate of SCR2. Though people left the surrounding of lamp, the lamp keeps light for a while.