• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1111-1117
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• 2008

A transformer type superconducting fault current limiter (SFCL) is one of the fault current limiters which have been proposed to reduce the fault current in the transmission lines. This paper proposes the new circuit configuration of a transformer type SFCL and also investigates the operating characteristics of the transformer type SFCL containig the resistor in the tertiary winding. The proposed SFCL contains the resistor in the tertiary winding. The newly inserted resistor can divert the power which the High-Tc superconducting has to bear. Because the resistor in the tertiary winding relieves the power of the High-Tc superconducting, it is possible that the proposed transformer type SFCL can decrease the more larger fault current than the conventional SFCL with the same High-Tc superconducting. And the cost of the proposed transformer type SFCL can be reduced.

• 대한전자공학회논문지SD
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• 제45권4호
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• pp.72-77
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• 2008

본 논문에서는 Embedded resistor 적용을 위한 오개닉 기판 위에 캐버티(Cavity) 공정에 의해서 형성된 균일한 두께를 갖는 저항체의 제조 방법과 저항편차에 대해서 조사했다. 기존의 스크린 프린팅에 의해서 발생하는 PCB의 위치에 따른 저항값의 편차를 개선하기 위하여 캐버티 공정을 소개했다. 원하는 모양과 부피를 갖는 저항은 스크린 프린팅과 페이스트를 이용하여 cavity 공정에 의해 정확하게 형성되어 졌다. 이 방법은 PCB의 생산 공정시간을 줄일 수 있고, 스크린 프린팅의 정밀도에 의한 큰 영향 없이 빠르게 공정 조건을 배치할 수 있으므로써 생산량을 개선시킬 수 있다.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.107-111
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• 2018

In this study, we designed the temperature coefficient of resistance (TCR) and heat radiation properties of shunt fixed resistors by adjusting the atomic composition of a metal alloy resistor, and fabricated a resistor that satisfied the designed properties. Resistors with similar atomic composition of copper and nickel showed low TCR and excellent shunt fixed resistor properties such as short-time overload, rated load, humidity load, and high temperature load. Finally, we expect that improved sensor accuracy will be obtained in current-distribution-type shunt fixed resistor for IoT sensors by designing the atomic composition of the metal alloy resistor proposed in this work.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2103-2105
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• 2005

Metal film type of resistor have been tested to invest maximum usable power at the pulsed high voltage and pulsed high current. Experiments were carried out using capacitor charging power supply and dump switch. Pulsed amplitude were varied from 1kV to 25kV. The peak current reached was 1kA. Datasheet are given for the limited pulsed power and energy for metal film type of resistor in nanosecond and microsecond time range. The experimental investigation of the threshold loading of the resistor in the high current and voltage pulsed mode has shown that the process of destruction of resistor has specific features for each mode. The mechanisms of failure and destruction of resistors under action of high-voltage and high-current pulses are discussed.

• 한국초전도ㆍ저온공학회논문지
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• 제6권1호
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• pp.48-52
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• 2004

Breakdown characteristics of insulator-liquid nitrogen ($LN_2$) composite insulation for resistor type High $T_c$/ superconducting fault current limiter (HTSFCL) under ac and impulse voltage in $LN_2$ has been studied using model electrode systems. Electrodes for model electrode systems were made of SUS 304 contacted fiberglass reinforced plastic (FRP) and Au coated sapphire. The breakdown characteristics of model electrode systems were investigated experimentally for FRP thickness ranging from 1 mm to 5 mm. surface distance ranging from 2.5 mm to 7 mm and electrode gap ranging from 1 to 5 mm. The experimental data suggested that the breakdown voltage of model electrode systems in $LN_2$ is highly dependent on the surface distance, electrode gap as well as on the FRP thickness. Also, we had observed discharge traces and puncture due to high-voltage 60-Hz AC stress.

• 센서학회지
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• 제27권1호
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.376-380
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• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.189-192
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• 1998

In this paper, we analyzed Microwave-DC conversion efficiency for the rectennas and it's position change. Rectenna consist of a two major parts, receiveing antenna and rectifying circuits. We made two types of 2.45C rectennas which the dipole and the patch antenna. Rectifying circuit is a GaAs-schottky diode with a large forward current and reverse breakdown voltage. The results of RF-DC conversion efficiency for two rectennas, patch type has 75.6% efficiency with 400$\Omega$ load resistor and dipole type has 69.75% efficiency with 360$\Omega$ load resistor. When the rectennas has optimal load resistor, Rectenna efficiency shows of $\pm10%$ at $70^{\circ}$~$110^{\circ}$ position.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.27-34
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• 1995

The analysis of nonlinear equivalent circuit and the resonance characteristics of input current and output voltage were simulated, and their electrical properties are discussed in the transverse-type piezoelectric ceramic transformer. The nonlinear resonance characteristics of input current and output voltage showed by the thermal effect due to a higher driving current, the nonlinearity increased greatly as driving current increased. When load resistor was 100[M.ohm.], the nonlinear coefficient was -1.3. The nonlinear resonance curve of input current and output voltage for a variation of input voltage and load resistor agreed with the discussed theory. The output voltage increased nearly proportioned to input voltage when load resistors were below 50[M.ohm.], the voltage step-up ratio decreased when a load resistor was 100[M.ohm.] and their maximum value was 950.

• 대한기계학회논문집
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• 제16권12호
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• pp.2407-2414
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• 1992

본 연구에서는 정온도 열선식 공기유량계의 전체적인 회로를 구성한 다음, 여 기에 간단한 온도보상시스템을 첨가함으로써 유동온도의 변화에 관계없이 일정한 출력 이 나오도록 하고, 이에 관련된 온도보상시스템의 메카니즘을 규명하고자 한다. 온 도보상시스템은 여러 가지가 알려져 있으나, Drubka(1977)가 열선브릿지에 단지 온도 센서(thermistor)를 삽입하고, 과열비(overheat ratio), 열선의 냉저항과 작동 중의 저항차, 열선의 브릿지상단에서의 출력 중 한 가지를 일정하게 유지시켜 온도보상을 수행하는 방법을 제안하였다. Takagi(1985)는 위의 방법 중 과열비를 일정하게 유지 시키는 방법을 택하고, 출력으로 브릿지상단의 전압이 아닌 열선에 흐르는 전류를 감 지함으로써 더욱 더 간단한 온도보상시스템을 제안하였다. 본 연구는 바로 이 방법 을 채용하여 온도보상을 수행한다.