• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.66-72
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• 2007

This paper describes the characteristics of power loss and leakage currents flowing through new and used 18[kV] zinc oxide(ZnO) surge arrester under the mixed DC and AC voltages. The mixed DC and AC voltage generator of 50[kV] peak was designed and fabricated. The I-V curves of ZnO surge arrester were measured as a function of the voltage ratio K. The I-V curves under the mixed DC and AC voltages lay between the pure DC and AC characteristics, and the cross-over phenomenon in both I-V curves and R-V curves was observed at the low current region. As a result, the increase of DC component in the mixed voltages causes the increase of resistive component of total leakage current of ZnO surge arrester. Also, in the case of same applied voltage, the leakage current flowing through the used ZnO surge arrester was higher than that of the new ZnO surge arrester.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.277-281
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• 2007

We investigated fault current limitation characteristics of the resistive superconducting fault current limiter (SFCL) which consisted of a Bi-2212 bulk coil and a shunt coil. The Bi-2212 bulk coil and the shunt coil were connected in parallel. The Bi-2212 bulk coil was placed inside the shunt coil to induce field-assisted quench. The fault test was conducted at an input voltage of $200V_{rms}$ and fault current of $12kA_{rms}\;and\;25kA_{rms}$. The fault conditions were asymmetric and symmetric, and the fault period was 5 cycles. The test results show that the SFCL successfully limited the fault current of $12kA_{rms}\;and\;25kA_{rms}$ to below $5.5{\sim}6.9kA_{peak}\;within\;0.64{\sim}2.17$ msec after the fault occurred. Limitation was faster under symmetric fault test condition due to the larger change rate of current. We concluded that the speed of fault current limitation was determined by the speed of current rise rather than the amplitude of a short circuit current. These results show that the Bi-2212 bulk coil is suitable for distribution-class SFCLS.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.171-171
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• 2010

In this work, we investigated the effect of the oxidation temperature on the unipolar and bipolar resistance switching behaviors of the oxidized TiO-x films. TiOx films on Pt electrodes were fabricated by the oxidation of Ti films at $550^{\circ}C$ for 1 to 3 hours. The unipolar and bipolar resistance switching properties were investigated with the oxidation temperature and time. Also, the crystal structure and the physical properties such as chemical bonding states of TiOx layers were characterized in addition to the resistance switching characteristics. The resistance switching behaviors of TiOx films oxidized at above $450^{\circ}C$ and below $650^{\circ}C$ was shown. So, we investigated that the resistance switching behaviors of TiOx films oxidized at $550^{\circ}C$ with the oxidation time from 1 to 3 hour. The memory windows of unipolar switching in the oxidized TiOx films were reduced with increasing the oxidation time, but those of the bipolar switching were slightly enlarged. The enlargement of rutile TiO2 peak with increasing the oxidation time and temperature was studied by X-ray diffraction. An increase of non-lattice oxygen and Ti3+ in the TiOx films with the oxidation times was investigated by X-ray photoemission spectroscopy. It was expected that the uipolar and bipolar resistive switching of the oxidized TiOx film was strongly related with the migration of non-lattice oxygen anions and schottky barrier height, respectively.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.639-640
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• 2006

We investigated fault current limitation characteristics of the resistive superconducting fault current limiter(SFCL) which consisted of a Bi-2212 bulk coil and a shunt coil. The Bi-2212 bulk coil and the shunt coil were connected in parallel. The Bi-2212 bulk coil was placed inside the shunt coil to induce field-assisted quench. The fault test was conducted at an input voltage of 200 $V_{rms}$ and fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$. The fault conditions were asymmetric and symmetric, and the fault period was 5 cycles. The test results show that the SFCL successfully limited the fault current of 12 $kA_{rms}$ and 25 $kA_{rms}$ to below $5.5{\sim}6.9kA_{peak}$ within $0.64{\sim}2.17$ msec after the fault occurred. Limitation was faster under symmetric fault test condition due to the larger change rate of current. We concluded that the speed of fault current limitation was determined by the speed of current rise rather than the amplitude of a short circuit current. These results show that the Bi-2212 bulk coil is suitable for distribution-class SFCLs.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.6 s.171
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• pp.213-221
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• 2005

An insole type local shear force measurement system was developed and local shear stresses in the foot were measured during level walking. The shear force transducer based on the magneto-resistive principle, was a rigid 3-layer circular disc. Sensor calibrations with a specially designed calibration device showed that it provided relatively linear sensor outputs. Shear transducers were mounted on the locations of four metatarsal heads and heel in the insole. Sensor outputs were amplified, decorded in the bluetooth transmission part and then transferred to PC. In order to evaluate the developed system, both shear and plantar pressure measurements, synchronized with the three-dimensional motion analysis system, were performed on twelve young healthy male subjects, walking at their comfortable speeds. The maximum peak pressure during gait was 5.00kPa/B.W at the heel. The time when large local shear stresses were acted correlated well with the time of fast COP movements. The anteroposterior shear was dominant near the COP trajectory, but the mediolateral shear was noted away from the COP trajectory. The vector sum of shear stresses revealed a strong correlation with COP movement velocity. The present study will be helpful to select the material and to design of foot orthoses and orthopedic shoes for diabetic neuropathy or Hansen disease.

• Composites Research
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• v.36 no.5
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• pp.335-341
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• 2023

We proposed a high-temperature circuit-analog radar absorbing structures (CA-RAS), and evaluated radar absorption performance and tensile properties in 350℃ and a hot-wet environment. The CA-RAS was implemented with a glass/cyanate ester composites and a square resistive pattern layer, and reflection loss was measured by 350℃ and after exposure of hot-wet condition using free space measurement. And the tensile strength at 350℃ and after exposure of hot-wet condition was measured according to the ASTM D638. The proposed CA-RAS showed a 4 GHz of -dB bandwidth and -20 dB of a peak value at 350℃. In addition, there was no deterioration in absorption performance after exposure to a hot-wet condition. The tensile strength value of more than 95% compared to the strength of the glass/cyanate ester composite was confirmed at 350℃ and after exposure of hot-wet condition. Through this, the applicability of CA-RAS proposed in this study was confirmed as a load bearing structure for stealth weapon exposed to high temperature and hot-wet environment.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.58-63
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• 2022

Graphite has been used as an anode material for lithium-ion batteries for the past 30 years due to its low de-/lithiation voltage, high theoretical capacity of 372 mAh/g, low price, and long life properties. Recently, all-solid-state lithium-ion batteries (ASSLB), which are composed of inorganic solid materials with high stability, have received great attention as electric vehicles and next-generation energy storage devices, but research works on graphite that works well for ASSLB systems are insufficient. Therefore, we induced the performance improvement of ASSLB anode electrode graphite material by removing the amorphous carbon present in the carbon material surface, acting as a resistive layer from the graphite. As a result of X-ray diffraction (XRD) analysis using heat treated graphite in air at 400, 500, and 600 ℃, the full width at half maximum (FWHM) at (002) peak was reduced compared to that of bare graphite, indicating that the crystallinity of graphite was improved after heat treatment. In addition, the discharge capacity, initial coulombic efficiency (ICE) and cycle stability increased as the crystallinity of graphite increased after heat treatment. In the case of graphite annealed in air at 500 ℃, the high capacity retention rate of 331.1 mAh/g and ICE of 86.2% and capacity retention of 92.7% after 10-cycle measurement were shown.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.