• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.1
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• pp.13-17
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• 2006

In this paper, the RCF(Resistive Companion Form) analysis method which is used to analyze small signal stability problems of non-continuous systems including switching devices. The RCF analysis method is mathematically rigorous and computes eigenvalue of the system periodic transition matrix based on discrete system analysis method. As an effect of switching operations, the eigenvalues of the systems are changed and newly unstable oscillation modes may be occurred. As an illustrating example, the oscillation modes of the system with different switching time intervals are computed exactly by the RCF analysis method and the results show that ON/OFF time intervals of switching equipments are important factors to make the system stable or unstable. This result shows that the RCF analysis method is very powerful to analyze small signal stability problems of power systems including switching devices such as FACTS equipments.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.11
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• pp.619-623
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• 2004

We proposed the bridge type superconducting fault current limiter(SFCL) using switching operation of high-Tc superconducting(HTSC) thin film. The proposed bridge type SFCL consists of HTSC thin film, a diode bridge and a dc reactor. The controller for the operation of an interrupter is required in the conventional bridge type SFCL to prevent the continuous increase of fault current after a fault happens. On the other hand, the proposed bridge type SFCL can limit the fault current without the interrupter and the controller for its operation by the resistance generated when the gradually increased fault current exceeds HTSC thin film's critical current. We calculated the time when the gradually increased fault current started to be limited by the resistance generated in HTSC thin film after a fault happened and confirmed that it could be dependent on the amplitude of source voltage. The experimental results well agreed with the calculated ones from simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.180-180
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• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.3
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• pp.363-368
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• 2008

In this paper, the Resistive Companion Form(RCF) analysis method is applied to analyze small signal stability of power systems including thyristor controlled FACTS equipments such as SVC. The eigenvalue sensitivity analysis algorithm in discrete systems based on the RCF analysis method is presented and applied to the power system including SVC. As a result of simulation, the RCF analysis method is proved very effective to precisely calculate the variations of eigenvalues or newly generated unstable oscillation modes after periodic switching operations of SVC. Also the eigenvalue sensitivity analysis method based on the RCF analysis method enabled to precisely calculate eigenvalue sensitivity coefficients of controller parameters about the dominant oscillation mode after periodic switching operations in discrete systems. These simulation results are different from those of the conventional continuous system analysis method such as the state space equation and proved that the RCF analysis method is very effective to analyze the discrete power systems including periodically operated switching equipments such as SVC.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.12-13
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• 2006

In this paper, RCF(Resistive Companion Form) analysis method which is used to analyze small signal stability problems of non-continuous systems including switching device. The RCF analysis method are applied to the power systems with the thyristor controled FACTS equipments such as TCSC. As a result of simulation, the RCF method is very powerful to calculate the oscillation modes exactly after the switching operations, and useful to analyze the small signal stability of power systems with switching devices such as FACTS equipments. As an applicable example of the RCF method in power system, the one machine infinite bus system including TCSC at generator terminal bus is investigated and the results proved that variations of oscillation modes after periodic switching operations of TCSC can be calculated exactly.

• KIEE International Transactions on Power Engineering
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• v.4A no.2
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• pp.79-83
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• 2004

A new small signal stability analysis method for eigenvalue analysis is presented. This method utilizes the Resistive Companion Form (RCF) for the computation of the transition matrix over a specified time interval, which corresponds to a single cycle operation of the system. This method is applicable to any system, with or without switching element. An illustrative example of the method is presented and the eigenvalues are compared with those of the conventional state space method (analog) in order to demonstrate the accuracy of the proposed eigenvalue analysis method. Also, the variations of oscillation modes that are caused by the switching operation can be precisely analyzed using this method.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.232-232
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.131-131
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• 2008