• Journal of the Semiconductor & Display Technology
• /
• v.17 no.4
• /
• pp.97-100
• /
• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.262-269
• /
• 2008

The residual gas analyzer (RGA) is employed for the process control of a vacuum system by measuring residual gases in it. This review paper introduces operating principles of the RGA and problems that can be encountered during use, together with their possible solutions.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.68 no.1
• /
• pp.102-107
• /
• 2019

This paper proposes a method to improve the mass spectral detection performance of the residual gas analyzer. By improving the mode estimation method for setting the threshold value and improving the additive noise elimination method, it is possible to detect mass spectrums having low peak values of the threshold level difficult to distinguish from noise. Ion signal blocks for each mass index with noise removed by the improved method are effective for eliminating invalid ion signals based on the linear and quadratic fittings. The mass spectrum can be obtained from the quadratic fitted curves for the reconstructed ion signal block using only the valid ion signals. In addition, the resolution of the mass spectrum can be improved by correcting the error caused by the shift of the spectral peak position. To verify the performance of the proposed method, computer simulations were performed using real ion signals obtained from the residual gas analysis system under development. The simulation results show that the proposed method is valid.

• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.91-98
• /
• 2007

The Korea Research Institute of Standards and Science (KRISS) has developed a residual gas analyzer (RGA) calibration system and measured gas sensitivities for two different types QMSs using nitrogen, argon, and helium. Different gas sensitivities were identified according to mass and pressure, so it was revealed that the gas sensitivity correction is necessary for proper use of mass spectrometers.

• Journal of the Semiconductor & Display Technology
• /
• v.23 no.2
• /
• pp.129-134
• /
• 2024

This study aims to talk about the necessity of solving the PFC gas emission problem raised by the recent development of the semiconductor industry and the remote plasma source method monitoring system used in the semiconductor industry. The 'monitoring system' means that the researchers applied machine learning to the existing monitoring technology and modeled it. In the process of this study, Residual Gas Analyzer monitoring technology and linear regression model were used. Through this model, the researchers identified emissions of at least 12700mg CO2 to 75800mg CO2 with values ranging from ion current 0.6A to 1.7A, and expect that the 'monitoring system' will contribute to the effective calculation of greenhouse gas emissions in the semiconductor industry in the future.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.104.2-104.2
• /
• 2013

A residual gas analyzer (RGA) system has been developed in this laboratory. Characteristics of the RGA system parts such as ion source, quadrupole mass filter and sensitivity are introduced. Some efforts have been made to improve performance of the two types of ion sources, open ion source (OIS) and closed ion source (CIS). A metal mesh was placed onto the electron beam entrance of the CIS anode tube to block the filament field penetration. Sensitivity of the CIS ion sources with and without the mesh was compared by mass spectra of SF6 gas (97% He base) introduced into the CIS anode through a needle valve. About ten-times improvement in the RGA sensitivity was observed for the CIS with the mesh in the electron entrance. Computer simulation showed an axi-symmetric anode potential distribution and improved focusing of the electron beam inside the anode tube with the mesh.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.50-50
• /
• 2000

당사는 1970년 제우스 콤 상사로부터 출발하여 1988년 12우러 주식회사 제우스로 법인 전환한 후 현재 한국반도체 산업협회 및 회원으로 등록 활동하고 있다. 이번 발표에서는 회사에 대한 소개와 함께 취급품목을 설명하고자 한다. 취급품목은 Ion beam sources(CSC), E-beam evaporator & E-beam source(Temescal), Residual Gas Analyzer(SPECTRA), Cryopump & Waterpump(CTI-Cryogenics), Thickness Monitor & Controller, Electrical Feedthrough, RTP system, Thin Film Analyzer, PECVD, RIE 등이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.51-51
• /
• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.217-217
• /
• 2009

• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.1-8
• /
• 2008

We analyzed the characteristics of water leakage from cooling components of the storage ring in the Pohang Light Source. The water leaks led localized pressure bumps and abnormal pressure changes. The leakage also changed the residual gas compositions depending not only on the position between leakage place to gas analyzer but also on on/off switching of ion pump and electron beam. We found that the residual gas analysis of $CH_4$, CO, NO was useful in determining water leaks.