• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.457-458
• /
• 2007

We investigated a resistor network model for the horizontal AlInGaN LED. Adding the proposed current density dependent relative quantum efficiency, the power simulation can be also obtained. Comparing the simulation and the measurement results for the LED with the size of $350{\mu}m$, the model is reasonable to simulate the forward voltage and the light output power. Using this model we investigated the optimization of the position and the number of the finger electrodes in a given chip area. It shows that the center disposition of the p-finger electrode in p-area is optimal for the voltage and best for the power. And the minimum number of the n-finger electrodes is best for the power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.1
• /
• pp.73-78
• /
• 2008

A resistor network model for the horizontal AlInGaN LED was investigated, The parameters of the proposed model are extracted from the test dies and $350{\mu}m$ LED, The center of the P-area is the optimal position of a P-electrode by the simulation using the model. Also the optimal chip size of the LED for the new target current was investigated, Comparing the simulation and fabrication result, the errors for the forward voltage and the light power are average 0,02 V, 8 % respectively, So the proposed resistor network model with the linear forward voltage approximation and the exponential light power model are useful in the simulation for the horizontal AlInGaN LED.