• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1991년도 하계학술대회 논문집
• /
• pp.183-186
• /
• 1991

In order to prepare the functional organic optic meterials, the capacitive coupled gas flow type plasma polymerization apparatus was designed and manufactured. Styrene and para-Xylene monomer were adopt as organic materisl. Optical constant, refrative index, extinction coefficient of organic thin films by the gas flow type plasma polymerization appratus were determined by envelope method using spectrophotometry. The refractive index of plasma polymerized thin films was decreased in accordance to increase of wave length and discharge time. The extinction coefficient was very small compared with refractive index. From the experimental result of optical constant and film thickness, it was considered that the films which had required optical properties and thickness can be prepared by control of polymerization condition.

• Elastomers and Composites
• /
• 제50권2호
• /
• pp.98-102
• /
• 2015

A series of polyurethane-acrylate hybrids were synthesized by 2-step emulsion polymerization of a variety of acrylate monomers such as 2-hydroxy ethyl methacrylate (HEMA), methyl methacrylate (MMA). Experiment was performed to improve stability and emulsibility of surface treatment agent, and it was found that the polyurethane-acrylate hybrids having an optimum composition (MMA : 20%, LA(EO)3-S : 3% and TDA-7 : 5%) was shown to be quite surface active in the solid contents. These results suggests that the optimal polyurethane-acrylate hybrids in this study have high potential as top coating agent, which may have high gloss and excellent properties.

• 한국안광학회지
• /
• 제8권2호
• /
• pp.31-35
• /
• 2003

몇 가지 합성한 poly(6-dialkylamino-1,3,5-triazine-2,4-dithioxylene) 유도체들은 poly(6-dialkylamino-1,3,5-triazine-2,4-dithiol과 m- 또는 p-dibromide xylene으로부터 $70^{\circ}C$에서 약 24시간 동안 cetyltrimethyl ammo-nium bromide와 중축합반응 시켜서 얻었다. 합성해서 얻은 유도체들의 굴절률이 97~196.6을 보였으며, 물흡광계수는 97~196.6범위에서 나타났다. 따라서 이들 고분자 유도체들이 높은 전자밀도를 가지는 황 원자와 트리아진 고리를 가지므로 인해 복굴절 현상이 없으면서 높은 굴절률을 가진다는 것을 알았다.

• 한국전기전자재료학회논문지
• /
• 제17권6호
• /
• pp.580-585
• /
• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• 한국재료학회지
• /
• 제3권4호
• /
• pp.352-360
• /
• 1993

열산화막위에 LPCVD법을 이용하여 질화막을 형성시킨 후, 질화막의 열처리 유무와 습식재산화처리의 공정조건에 따른 다양한 막의 두께를 가진 ONO(oxide nitride oxide)캐패시터를 제작하여 여러가지 물성을 조사하였다. 질화막을 습식산화처리하여 전체막의 굴절윷과 식각거동을 관찰한 결과, 40$\AA$두께의 질화막은 치밀하지 못하여 계속되는 산화공정동안에 하부층 산화막이 성장되었고 정전용량의 확보능력도 떨어졌다. ONO다층유전박막의 전도전류는 하부층 혹은 상부층 산화막의 두께가 증가함에 따라 감소하였다. 그러나 산화막이 50$\AA$ 이상인 경우에는 정전용량의 감소요인으로 작용할 뿐, hole유입에 대한 barrier역할은 크게 향상되지 못하였다. 산화전 질화막에 대한 열처리 효과는 막의 굴절율과 정전용량에 큰 영향을 주지 못하였으나 절연파괴전압은 약 2-3V 상승효과를 보였다.