• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.183-186
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• 1991

In order to prepare the functional organic optic meterials, the capacitive coupled gas flow type plasma polymerization apparatus was designed and manufactured. Styrene and para-Xylene monomer were adopt as organic materisl. Optical constant, refrative index, extinction coefficient of organic thin films by the gas flow type plasma polymerization appratus were determined by envelope method using spectrophotometry. The refractive index of plasma polymerized thin films was decreased in accordance to increase of wave length and discharge time. The extinction coefficient was very small compared with refractive index. From the experimental result of optical constant and film thickness, it was considered that the films which had required optical properties and thickness can be prepared by control of polymerization condition.

• Elastomers and Composites
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• v.50 no.2
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• pp.98-102
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• 2015

A series of polyurethane-acrylate hybrids were synthesized by 2-step emulsion polymerization of a variety of acrylate monomers such as 2-hydroxy ethyl methacrylate (HEMA), methyl methacrylate (MMA). Experiment was performed to improve stability and emulsibility of surface treatment agent, and it was found that the polyurethane-acrylate hybrids having an optimum composition (MMA : 20%, LA(EO)3-S : 3% and TDA-7 : 5%) was shown to be quite surface active in the solid contents. These results suggests that the optimal polyurethane-acrylate hybrids in this study have high potential as top coating agent, which may have high gloss and excellent properties.

• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.31-35
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• 2003

Several poly(6-dialkylamino-1,3,5-triazine-2,4-dithioxylene) derivatives were synthesized by the polycondensation of 6-dialkylamino-1,3,5-triazine-2.4-dithiol with m- and p-dibromide xylene in a cetyltrimethyl ammonium bromide at $70^{\circ}C$ for 24h. The synthesized derivatives had refractive Indexes of 1.580~1.697 and had molar absorptivity of 97~196.6. In these derivatives, we knew that they are a polymer having high refraction indexes without double refraction because they contain triazine rings and sulfur atoms with high electron density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.352-360
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• 1993

A nitride layer was df'posited on the thermal oxide layer by LPCVD process. ONO(oxidenitricle oxide) capacitors with various thickness of component layer wore fabricated by wet reoxidation of the nitride with and without anrwalmg treatment and their properties were investigated. As a result of observation on the refrative index and etching behavior of the ONO fIlms, the nitride layer OF 40 A thick ness was not so dense that the bottom oxide during the reoxidation process and the capability of securing the capacitance decreased. The conduction current in the ONO multl-Iayer dielctric film was reduced as the bottom(or top) oxide layer became thicker. However, in the case of oxide with thickness more than 50A, it merely plays a factor of reduction in capacitance, and the effect of barrier for hole injection was not so much increased. Annealing of the nitride laypr bpfore reoxidation did not show a grpat effects on the refractive index and capacitance of the film, however, the annealing process increased the breakdown voltage by 2${\cdot}$V.