• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.62-68
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• 2012

The conversion efficiency of solar cells depending on incident angle of light is important for building-integrated photovoltaics (BIPV) applications. The quantum efficiency is the ratio of the number of charge carriers collected by the solar cell to the number of photons of a given energy shining on the solar cell. The analysis of angle dependence of quantum efficiencies give more information upon the variation of power output of a solar cell by the incident angle of light. The variations in power output of solar cells with increasing angle of incidence is different for the type of cell structures. In this study we present the results of the quantum efficiency measurement of single-crystalline silicon solar cells and a-Si:H thin-film solar cells with the angle of incidence of light. As a result, as the angle of incidence increases in single-crystalline silicon solar cells, quantum efficiency at all wavelength (300~1,100 nm) of light were reduced. But in case of a-Si:H thin-film solar cells, quantum efficiency was increased or maintained at the angle of incidence from 0 degree to about 40 degrees and dramatically decrease at more than 40 degrees in the range of visible light. This results of quantum efficiency with increasing incident angle were caused by haze and interference effects in thin-film structure. Thus, the structural optimization considering incident angle dependence of solar cells is expected to benefit BIPV.

• Geophysics and Geophysical Exploration
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• v.14 no.4
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• pp.289-297
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• 2011

Chirp sub-bottom profilers (SBP) data are comparatively higher-resolution data than other seismic data and it's raw signal can be used as a final section after conducting basic filtering. However, Chirp SBP signal has possibility to include various noise in high-frequency band and to provide the distorted image for the complex geological structure in time domain. This study aims at the goal to establish the workflow of Chirp SBP data processing for enhanced image and to analyze the proper parameters for the domestic continental shelf. After pre-processing, we include the dynamic S/N filtering to eliminate the high-frequency component noise, the dip scan stack to enhance the continuity of reflection events and finally the post-stack depth migration to correct the distorted structure on the time domain sections. We demonstrated our workflow on the data acquired by domestically widely used equipments and then we could obtain the improved seismic sections of depth domain. This workflow seems to provide the proper seismic section to interpretation when applied to data processing of Chirp SBP that are largely used for domestic acquisition.

• Journal of the Korean earth science society
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• v.32 no.6
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• pp.674-686
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• 2011

Choosing a seismic source and geophone type including a coupling method can be the most important factor in shallow seismic surveys. We studied the characteristics of seismic signals by analyzing 6 different seismic data sets that collected from several sources and geophone conditions. Geophones attached to weight plate (1.8 kg) can be easily and economically installed on the paved road where geophones with spikes would cause the coupling problem. In addition, experiments in this study revealed that a small handy hammer can be used as a seismic source by striking the paved road to generate the seismic signals within 200 ms two-way travel time. Attaching weight plates to geophones may change the geophone response curve which generally depends on the geophone mass, but the change seems not to give significant differences in the first arrival of refracted wave and in the pattern of reflection events. Consequently, using weight plates on paved roads can be an efficient and cost-saving method in the near-surface high-resolution seismic surveys.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.132-138
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• 2003

A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The $CdIn_2Te_4$ single crystal was evaluated to be tetragonal by the power method. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61\times 1016 \textrm {cm}^{-3}$ and 242 $\textrm{cm}^2$/V.s at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $1.4750ev - (7.69\times10^{-3})\; ev/k)\;T^2$/(T + 2147k).The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2Te_4$ single crystal have been estimated to be 0.2704 eV and 0.1465 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the $\Gamma_7$ states of the valence band of the $CdIn_2Te_4$ single crystal. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-} B_{1-}$ and Cl-exciton peaks for n = 1.

• KIEAE Journal
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• v.17 no.1
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• pp.69-75
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• 2017

Purpose: Heat transfer analysis of recently developed 'slim type double-skin system window' were presented. This window system is designed for curtain wall type façade that main energy loss factor of recent elegant buildings. And the double skin system is the dual window system integrated with inner shading component, enclosed gap space made by two windows when both windows were closed and shading component effectively reflect and terminate solar radiation from outdoor. Usually double-skin system requires much more space than normal window systems but this development has limited by 270mm, facilitated for curtain wall façade buildings. In this study, we estimated thermophysical phenomena of our double-skin curtain wall system window with solar load conditions at the summer season. Method: A fully 3-Dimentional analysis adopted for flow and convective and radiative heat transfer. The commercial CFD package were used to model the surface to surface radiation for opaque solid region of windows' frame, transparent glass, fluid region at inside of double-skin and indoor/outdoor environments. Result: Steep angle of solar incident occur at solar summer conditions. And this steep solar ray cause direct heat absorption from outside of frame surface rather than transmitted through the glass. Moreover, reflection effect of shading unit inside at the double-skin window system was nearly disappeared because of solar incident angle. With this circumstances, double-skin window system effectively cuts the heat transfer from outdoor to indoor due to separation of air space between outdoor and indoor with inner space of double-skin window system.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.27 no.5
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• pp.324-338
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• 2015

Analytical solutions for interaction between seabed and waves such as progressive wave or partial standing wave with arbitrary reflection ratio or standing wave have been developed by many researchers including Lee et al.(2014; 2015a; 2015b; 2015c; 2015d) and Yamamoto et al.(1978). They handled the pore-water pressure as oscillating pore-water pressure and residual pore-water pressure separately and discussed the seabed response on each pore-water pressure. However, based on field observations and laboratory experiments, the oscillating and residual pore-water pressures in the seabed do occur not separately but together at the same time. Therefore, the pore-water pressure should be investigated from a total pore-water pressure point of view. Thus, in this paper, the wave-induced seabed response including liquefaction depth was discussed among oscillating, residual, and total pore-water pressures' point of view according to the variation of wave, seabed, and flow conditions. From the results, in the field of flow with the same direction of progressive wave, the following seabed response has been identified; with increase of flow velocity, the dimensionless oscillating pore-water pressure increases, but the dimensionless residual pore-water pressure decreases, and consequently the dimensionless total pore-water pressure and the dimensionless liquefaction depth decrease.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.148-148
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• 2000

지금까지 반도체 표면에 대한 연구는 주로 (1000, (111) 표면 등 낮은 밀러 지표를 가진 표면에 대해 이루어져 왔다. 이에 반해 밀러 지표가 높은 Si 면은 불안정하고, 가열하면 다른 표면, 즉 지표가 낮은 면으로 재배열하는 경향이 있는 것으로 알려져 있는데 아직 이들 높은 밀러 지표를 가진 표면에 대한 연구는 미미한 상태이다. 그러나, Si(113)면은 밀러 지표가 높으면서도 안정하기 때문에 Si(113)의 구조를 정확하게 알 수 있다면 밀러 지표가 낮은 Si 표면이 안정한 이유를 이해할 수 있을 것이다. 따라서 본 연구에서는 TOF-CAICISS 장치(Time of Flight - CoAxial Impact Collision Ion Scattering Spectroscopy) 장비와 RHEED(Reflection High Energy Electron Diffrction)를 이용하여 Si(113) 표면의 구조와 Si(113) 표면의 온도에 따른 구조 변화를 관찰하였다. TOF-CAICISS 실험결과를 보면 (3$\times$2)에서 (3$\times$1)으로 상변환하면서 Si(113) 표면에 오각형을 이루는 dimer 원자들과 adatom 원자들간의 높이차가 작아짐을 알 수 있다. RHEED 실험결과와 전산 모사 결과로부터 상온에서 Si(113)(3$\times$2) 구조를 가지다가 45$0^{\circ}C$~50$0^{\circ}C$에서 Si(113) (3$\times$1) 구조로 상변환한다는 것을 알 수 있다. 그러나, 아직 상전이 메카니즘은 명확하게 밝혀지지 않았다. 실험결과를 전산 모사와 비교함으로써 Si(113) 표면에 [33]방향으로 이온빔을 입사시켰을 경우 dabrowski 모델과 Ranke AI 모델이 적합하지 않다는 것을 알 수 있다./TEX>, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다. 결과 필름의 잔류 응력과 biaxial elastic modulus는 필름의 두께가 감소함에 따라 감소하는 경향을 나타냈으며, 같은 두께의 필름인 경우, 식각 깊이에 따른 biaxial elastic modulus 의 변화를 통해 최적의 식각 깊이를 알 수 있었다.도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.43-49
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• 1992

RHEED apparatus which is one of the systems of surface structure analysis has been constructed.Electron beam is focused by means of magnetic lens, and the beam divergence is about $1{\times}10^{-3}$ rad. The Acceleration voltage of this RHEED apparatus is continuously variable from 0 to 20 kV. K and Cs-adsorbed structureson Si(111)$7{\times}7$ surface at room and high temperatures($200{\times}700^{\circ}C$) have been investigated by RHEED. It is observed that the K and Cs-adsorbed Si(111)surface structures at saturation coverage are Si(111)$7{\tiems}7-K$ and Si(111)$1{\tiems}1-Cs$ at room temperature, respectively. When the specimen temperature was elevated during evaporation,the $3{\times}1$ structure appears in the range of temperature between $300^{\circ}C$ and $550^{\circ}C$, and the $1{\tiems}1$ structure appears above $550^{\circ}C$ in K/Si(111)system. Also, in Cs/Si(111) system the $\sqrt{3}{\times}\sqrt{3}$ structure appears at $300^{\circ}C$, and the $\sqrt{3}{\times}\sqrt{3}+3{\times}1$ structure appears between $350^{\circ}C$ and $400^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.67-72
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• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.