• Atmosphere
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• v.14 no.4
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• pp.3-18
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• 2004

Neglecting the vertical transport from the surface, most of the previous studies on the long-range transport of pollutants have only considered the horizontal transport caused by the free atmosphere wind. I used a three dimensional numerical model, MM5 (The fifth generation Penn State Univ./NCAR Mesoscale Model) for the simulation of vertical transport of pollutants and investigated the mechanism of the vertical transport of atmospheric pollutants between planetary boundary layer(PBL) and free atmosphere by fronts. From the three dimensional simulation of MM5, the amount of pollutants transport from PBL to free atmosphere is 48% within 18 hour after the development of front, 55% within 24 hour, and 53% within 30 hour. The ratios of the vertically transported pollutant for different seasons are 62%, 60%, 54%, and 43% for spring, summer, fall, and winter, respectively. The most active areas for the vertical transport are the center of low pressure and the warm sector located east side of cold front, in which the strong upward motion slanted northward occurs. The horizontal advection of pollutants at the upper level is stronger than at the lower level simply because of the stronger wind speed. The simulation results shows the well known plum shape distribution of pollutants. The high concentration area is located in the center and north of the low pressure system, while the second highest concentration area is in the warm sector. It is shown that the most important mechanism for the vertical transport is vertical advection, while the vertical diffusion process plays an important role in the redistribution of pollutants in the PBL.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.53.1-53.1
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• 2010

결정질 실리콘 태양전지의 효율을 향상시키기 위하여 수광면에 서로 다른 도핑농도를 가지는 고농도 도핑영역과 저농도 도핑영역으로 이루어진 emitter를 형성하는 것이 요구되며 이를 selective emitter라 칭한다. Selective emitter를 형성하면 고농도 도핑영역에서 금속전극과 저항 접촉이 잘 형성되기 때문에 직렬 저항이 최소화되고 저농도 도핑영역에서는 전하 재결합의 감소로 인하여 태양전지의 변환효율이 상승하는 이점이 있다. Selective emitter의 형성방법은 이미 다양한 방법이 제안되고 있으나, 본 연구에서는 기존에 제시된 방법과는 다르게 열산화 시 dopant redistribution에 의한 Boron depletion 현상을 이용하여 selective emitter를 형성하는 방법을 제안하였고, 이를 Simulation을 통하여 검증하였다. 초기 emitter 확산 후 junction depth는 0.478um, 면저항은 $104.2{\Omega}/sq.$ 이었으며, nitride masking layer 두께는 0.3um로 설정하였다. $1100^{\circ}C$에서 30분간 습식산화 공정을 거친 후 nitride mask가 있는 부분의 junction depth는 1.48um, 면저항은 $89.1{\Omega}/sq$의 값을 보였고, 산화막이 형성된 부분의 junction depth는 1.16um, 면저항은 $261.8{\Omega}/sq$의 값을 보였다. 위 조건의 구조를 가진 태양전지의 변환 효율은 19.28%의 값을 나타내었고 Voc, Jsc 및 fill factor는 각각 645.08mV, $36.26mA/cm^2$, 82.42%의 값을 보였다. 한편 일반적인 구조로 설정한 태양전지의 변환 효율, Voc, Isc 및 fill factor는 각각 18.73%, 644.86mV, $36.26mA/cm^2$, 80.09%의 값을 보였다.

• The KIPS Transactions:PartD
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• v.10D no.4
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• pp.639-646
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• 2003

Conventional two-tier databases have shown performance limitation in the presence of many concurrent clients. To this end, the three-tier architecture that exploits similarities in client's object access behavior has been proposed. In this system, clients are partitioned into clusters, and object requests can be then served in inter-cluster manner. Introducing an intermediate layer between server(s) and clients enables this. In this paper, we introduce the problem of client realignment in which access behavior changes, and propose on-line client clustering. This system facilitates adaptive reconfiguration and redistribution of sites. The core issue in this paper is to demonstrate the effectiveness of on-line client clustering. We experimentally investigate the performance of the scheme and necessary costs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.63-63
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• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.77-77
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• 2018

Panel level packaging (PLP) 공정은 차세대 반도체 패키징 기술로써 wafer level packaging 대비 net die 면적이 넓어 생산 단가 절감에 유리하다. PLP 공정에 적용되는 구리 재배선 층 (RDL, redistribution layer)은 두께 불균일도에 의해 전기 저항의 유동이 민감하게 변화하기 때문에 RDL의 두께를 균일하게 형성하는 것은 신뢰성 측면에서 매우 중요하다. 구리 RDL은 주로 도금 공정을 통해 형성되며, 균일한 도금막 형성을 위해 도금조에 평탄제를 첨가하여 도금 속도를 균일하게 한다. 도금막에 대한 흡착은 주로 평탄제의 imine 작용기에 포함된 질소 원자가 관여하며, imine 작용기의 4차화에 의한 평탄제의 흡착 정도를 제어하여 평탄제 성능을 개선할 수 있다. 본 연구에서는 도금 평탄제에 포함된 imine 작용기의 질소 원자를 4차화하여 구리 RDL의 도금 두께 불균일도를 제어하고자 하였다. 유기첨가제와 4차화 반응을 위해 알킬화제로써 dimethyl sulfate의 비율을 조절하여 각각 0, 50, 100 %로 4차화 반응을 진행하였다. 평탄제의 4차화 여부를 확인하기 위해 gel permeation chromatography (GPC) 분석을 실시하였다. 도금은 20 ~ 200 um의 다양한 배선 폭을 갖는 구리 RDL 미세패턴에서 진행하였으며, 4차화 평탄제를 첨가하여 광학 현미경과 공초점 레이저 현미경을 통해 도금막 표면과 두께에 대한 분석을 실시하였다. GPC 분석을 통해 4차화 반응 후 알킬화제에 의해 나타나는 GPC peak이 감소한 것을 확인하였다. 광학 현미경 및 공초점 레이저 현미경 분석 결과, 4차화된 질소 원자가 존재하지 않는 평탄제의 경우, 도금 시 도금막의 두께가 불균일하였으며 단면 분석 시 dome 형태가 관찰되었다. 또한 100 % 4차화를 실시한 평탄제를 첨가하여 도금 한 경우 마찬가지로 두께가 불균일한 dish 형태의 도금막이 형성되었다. 반면, 50 % 4차화를 적용한 평탄제를 첨가한 경우, 도금막 단면의 형태는 평평한 모습을 보였으며 매우 양호한 균일도를 가지는 것으로 확인되었다. 이로 인해 imine 작용기를 포함한 평탄제의 4차화 반응을 통해 구리 RDL의 단면 형상 및 불균일도가 제어되는 것을 확인하였으며, 4차화된 imine 작용기의 비율을 조절하여 높은 균일도를 갖는 구리 RDL 도금이 가능한 것으로 판단되었다.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1117-1122
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• 1999

Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.1-6
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• 2016

The Internet of Things (IoT) is a new technology paradigm demanding one packaged system of various semiconductor and MEMS devices. Therefore, the development of electronic packaging technology with very high connectivity is essential for successful IoT applications. This paper discusses both fan-out wafer level packaging (FOWLP) and 3D stacking technologies to achieve the integrattion of heterogeneous devices for IoT. FOWLP has great advantages of high I/O density, high integration, and design flexibility, but ultra-fine pitch redistribution layer (RDL) and molding processes still remain as main challenges to resolve. 3D stacking is an emerging technology solving conventional packaging limits such as size, performance, cost, and scalability. Among various 3D stacking sequences wafer level via after bonding method will provide the highest connectivity with low cost. In addition substrates with ultra-thin thickness, ultra-fine pitch line/space, and low cost are required to improve system performance. The key substrate technologies are embedded trace, passive, and active substrates or ultra-thin coreless substrates.

• Journal of Information Processing Systems
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• v.8 no.4
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• pp.603-620
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• 2012

Proxy Mobile IPv6 (PMIPv6) is a network-based mobility support protocol and it does not require Mobile Nodes (MNs) to be involved in the mobility support signaling. In the case when multiple interfaces are active in an MN simultaneously, each data flow can be dynamically allocated to and redirected between different access networks to adapt to the dynamically changing network status and to balance the workload. Such a flow redistribution control is called "flow mobility". In the existing PMIPv6-based flow mobility support, although the MN's logical interface can solve the well-known problems of flow mobility in a heterogeneous network, some missing procedures, such as an MN-derived flow handover, make PMIPv6-based flow mobility incomplete. In this paper, an enhanced flow mobility support is proposed for actualizing the flow mobility support in PMIPv6. The proposed scheme is also based on the MN's logical interface, which hides the physical interfaces from the network layer and above. As new functional modules, the flow interface manager is placed at the MN's logical interface and the flow binding manager in the Local Mobility Anchor (LMA) is paired with the MN's flow interface manager. They manage the flow bindings, and select the proper access technology to send packets. In this paper, we provide the complete flow mobility procedures which begin with the following three different triggering cases: the MN's new connection/disconnection, the LMA's decision, and the MN's request. Simulation using the ns-3 network simulator is performed to verify the proposed procedures and we show the network throughput variation caused by the network offload using the proposed procedures.

• Structural Engineering and Mechanics
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• v.41 no.6
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• pp.711-734
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• 2012

The foundation of a tall building frame resting on settable soil mass undergoes differential settlements which alter the forces in the structural members significantly. For tall buildings it is essential to consider seismic forces in analysis. The building frame, foundation and soil mass are considered to act as single integral compatible structural unit. The stress-strain characteristics of the supporting soil play a vital role in the interaction analysis. The resulting differential settlements of the soil mass are responsible for the redistribution of forces in the superstructure. In the present work, the nonlinear interaction analysis of a two-bay ten-storey plane building frame- layered soil system under seismic loading has been carried out using the coupled finite-infinite elements. The frame has been considered to act in linear elastic manner while the soil mass to act as nonlinear elastic manner. The subsoil in reality exists in layered formation and consists of various soil layers having different properties. Each individual soil layer in reality can be considered to behave in nonlinear manner. The nonlinear layered system as a whole will undergo differential settlements. Thus, it becomes essential to study the structural behaviour of a structure resting on such nonlinear composite layered soil system. The nonlinear constitutive hyperbolic soil model available in the literature is adopted to model the nonlinear behaviour of the soil mass. The structural behaviour of the interaction system is investigated as the shear forces and bending moments in superstructure get significantly altered due to differential settlements of the soil mass.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.2
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• pp.16-22
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• 2024

With advances of artificial intelligence (AI) technology, the demand is increasing for high-end semiconductors in various places such as data centers. In order to improve the performance of semiconductors, reducing the pitch of patterns and increasing density of I/Os are required. For this issue, 2.5dimension(D) packaging is gaining attention as a promising solution. The core technologies used in 2.5D packaging include microbump, interposer, and bridge die. These technologies enable the implementation of a larger number of I/Os than conventional methods, enabling a large amount of information to be transmitted and received simultaneously. This paper proposes the Molded Bridge die on Substrate (MBoS) process technology, which combines molding and Redistribution Layer (RDL) processes. The proposed MBoS technology is expected to contribute to the popularization of next-generation packaging technology due to its easy adaption and wide application areas.