• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.230.1-230.1
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• 2016

본 연구에서는 Host-Dopant system 기반 적색 인광 OLED의 Emitting layer(EML)에서 doping 위치에 따른 특성 변화를 분석하였다. EML은 host 물질로 60 nm 두께의 CBP를 사용하고, 적색 발광을 위해 10 %의 $Ir(btp)_2$를 CBP의 Front, Middle, Back side에 각각 20 nm씩 doping하였다. 본 구조의 적색 인광 OLED는 current density, luminance, efficiency, EL spectrum 등을 통해 전기적, 광학적 특성 변화를 확인하였다. Front, Back side에 doping으로 인한 CBP의 Energy level이 3.6 eV에서 1.9 eV로 감소하여 각각 HTL/EML, EML/HBL의 경계에 carrier direct injection이 활성화 되었고, 이로 인한 charge balance의 저하를 확인하였다. EL spectrum결과 각 소자는 CBP의 618 nm 파장 외에도, 추가적으로 TPBi의 398 nm, NPB의 456 nm의 파장을 보였다. 이를 통해 doping 위치에 따라 exciton이 형성되는 recombination zone이 이동하고 있음을 확인하였고, Front side는 6 V의 인가전압에서는 발광 파장이 398 nm에서 높은 값을 보이나 8 V, 10 V, 12 V에서 618 nm에서 높은 값을 보이는 것으로 인가전압에 의해 recombination zone이 HTL쪽으로 이동되는 것 또한 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.305-306
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• 2009

In this study, we have invastigated the recombination zone in the blue phosphorescent organic light-emitting devices with various partially doped structures. The basic device structure of the blue PHOLED was anode / hole injection layer (HIL) / hole transport layer (HTL) / emittingvastigated the recombination zone in the blue layer (EML) / hole blocking layer (HBL) / electron transport layer (ETL) / electron injection layer (EIL) / cathode. After the preparation of the blue PHOLED, the current density (J) - voltage (V) - luminance (L) and current efficiency characteristics were measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.113-119
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• 2003

We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.947-950
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• 2001

We report the characteristics of organic light emitting diodes (OLEDS) by controlling the carrier mobility according to the crystalline of Iron(II) Phthalocyanine(Fe-Pc) and metal-free Phthalocyanine (H$_2$-Pc). In order to change the recombination zone, we controlled the hole mobility by changing the crystal structures of Fe-Pc and H$_2$-Pc. OLEDs were constructed with ITO/Fe-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq$_3$)/Al and ITO/H$_2$-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq$_3$)/Al. The electroluminescent properties were changed according to the heat-treatments of Fe-Pc and H$_2$-Pc. We observed that the recombination zone and the carrier mobility were changed as the higher occupied molecular orbital levels of Fe-Pc and H$_2$-Pc decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.45-49
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.927-930
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• 2001

We studied the electrical properties of Copper(II)-phthalocyanine (Cu-Pc) as a hole transport layer in organic light emitting devices (OLEDs). OLEDs were constructed with ITO/CU-Pc/triphenyl-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum ( Alq$_3$) + 4- (Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/Al. It was consisted of a thin DCM in Alq$_3$emission layer. We observed that the change of recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of Cu-Pc layer increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.675-678
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• 2001

We fabricated the organic light emittign diodes (OLEDs) with ITO/Cu-Pc/triphenyl-diamine (TPD)/TPD+tris-(8-hydroxyquinoline) aluminum (Alq$_3$)/Al. The electrical properties of Cu-Pc thin film were studied as a hole injection layer. the energy gap of Cu-Pc thin films is decreased according to the substrate heat treatment temperature increased. It could be controlled the hole mobility by changing the heat treatment condition of Cu-Pc. The emission wavelengths could be controlled by changing hole mobility and recombination zone in emission layer.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.156-156
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• 2010

We have developed highly efficient blue phosphorescent organic light-emitting devices (OLED) with simplified architectures using blue phosphorescent material. The basis device structure of the blue PHOLED was anode / emitting layer (EML) / electron transport layer (ETL) / cathode. The dopant was partially doped into the host layer for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs.