• 제목/요약/키워드: recombination current

검색결과 222건 처리시간 0.026초

Efficient Deep-Blue Organic Light-emitting Diodes with Double-Emission Layers

  • Seo, Ji-Hoon;Park, Jung-Sun;Seo, Bo-Min;Lee, Kum-Hee;Park, Jung-Keun;Yoon, Seung-Soo;Kim, Young-Kwan
    • Journal of Information Display
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    • 제10권3호
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    • pp.107-110
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    • 2009
  • Efficient deep-blue organic light-emitting diodes were demonstrated using 4,4'-bis(9-ethyl-3-carbazovinylene)-1,1'-biphenyl doped in double-emission layers (D-EMLs). The D-EML system, which consists of 2-methyl-9,10-di(2-naphthyl)anthracene and 1,4-(dinaphthalen-2-yl)-naphthalene as blue hosts, was employed to broaden the recombination zone and to ensure the good confinement of the holes and electrons. The optimized device showed a peak current efficiency of 4.47 cd/A, a peak external quantum efficiency of 4.09%, and Commission Internationale de L'Eclairage coordinates of (0.16, 0.10).

레이저 다이오드의 비이상적인 전류-전압 미분특성에 관한 연구 (Non-Ideal Electrical Derivative Characteristics and Their Implications in Laser Diodes)

  • Sang Bae Kim
    • 전자공학회논문지A
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    • 제28A권10호
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    • pp.830-839
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    • 1991
  • The correlation between electrical (derivativer) characteristics and electro-optical conversion characteristics of laser diodes has been investigated both theoretically and experimentally with emphasis on the nonideal behavior. Laser diodes are electrically pumped devices with the current resulting from the carrier recombination dynamics, and their junction voltage is given by the separation of the quasi-Fermi levels which are determined by the injected carrier concentration. Thus most of the informaiton related to laser diode operation characteristics is reveraled in the electrical characteristics which are relatively simple to measure with sufficient accuracy. Therefore the measurement of electrical characteristics and their derivatives is a very useful tool of laser diode characteristion.

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HgCdTe 이종접합 광다이오드의 수치 해석 (Numerical analysis of HgCdTe heterojunction photodiodes)

  • 조남홍;곽규달
    • 전자공학회논문지D
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    • 제34D권7호
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    • pp.45-55
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    • 1997
  • Electircal characteristics of HgCdTe photodiodes with a heterostructure to achieve high performance are analyzed numerically. A two-dimensional device simulator which can handle a HgCdTe heterostructure, was developed for this work. The effects of band nonparabolicity, carrier degeneracy, and band-offset of heterointerace are included in a carrier transport model. A unified generation-recombination model includes simultaneously phonon-assisted tunneling and pure tunneling of carriers via traps is newly employed for describing the electric field and temperature dependency of dark current effectively. Furthermore, to accurately predict the effect mole fraction variations on genration rates, ray-trace algorithm is incorporated in the our simulator. Under the various circumstances such as dark, illumination, and surface states, electrical properties of planar heterostructure photodiode are presented and those of homojunction are compared. These results serve as a explanation of cap layer's role on performance.

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CFD analysis of the effect of different PAR locations against hydrogen recombination rate

  • Lee, Khor Chong;Ryu, Myungrok;Park, Kweonha
    • Journal of Advanced Marine Engineering and Technology
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    • 제40권2호
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    • pp.112-119
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    • 2016
  • Many studies have been conducted on the performance of a passive autocatalytic recombiner (PAR), but not many have focused on the locations where the PAR is installed. During a severe accident in a nuclear reactor containment, a large amount of hydrogen gas can be produced and released into the containment, leading to hydrogen deflagration or a detonation. A PAR is a hydrogen mitigation method that is widely implemented in current and advanced light water reactors. Therefore, for this study, a PAR was installed at different locations in order to investigate the difference in hydrogen reduction rate. The results indicate that the hydrogen reduction rate of a PAR is proportional to the distance between the hydrogen induction location and the bottom wall.

Interfacially Controlled Hybrid Thin-film Solar Cells Using a Solution-processed Fullerene Derivative

  • 남상길;송명관;김동호;김창수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.190.2-190.2
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    • 2014
  • We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

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Carrier Conducting Path in the Crystalline Silicon Solar Cells

  • Choi, Pyungho;Kim, Sangsub;Choi, Byoungdeog
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.457-457
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    • 2013
  • Current-voltage (I-V) measurements of crystalline silicon solar cells was conducted under dark conditions with the temperature range of 260 K~350 K. Using the calculation method, we extracted the crucial factors of ideality factor (n) and activation energy (Ea) to investigate the carrier conducting path in the space charge region (SCR) and the quasi-neutral region (QNR). Values of n were decreased with increasing temperature in both SCR and QNR. We also conformed that the value of Ea of SCR was larger than that of QNR about 0.4 eV. The temperature dependence of n indicates that the carrier conducting path is dominated by carrier recombination-generation in the SCR region than in the QNR region.

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유한요소법에 의한 DI 스위칭 소자의 모델링에 관한 연구 (A Study on the Modeling of DI Switching Device by FEM)

  • Lee, Hyun-Seok;Lee, Kye-Hoon;Rhle, Dong-Hee;Park, Sung-Hee
    • 대한전기학회논문지
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    • 제43권2호
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    • pp.285-295
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    • 1994
  • Double Injection(DI) switching devices consist of PS0+T and nS0+T contact separated by a nearly intrinsic semiconductor region containing deep trap. The equation set for DI switching device simulation by FEM is proposed. The existance of deep trap requires the modification of conventional equation set. So recombination rate equation is modified and a new equation is included in the equation set which conventionally consists op Poisson equation and current continuity equation. Consequently, the modeling equation set, which is proposed in this paper, can be applied to other semiconductor devices with trap.

Influence of a TiCl4 Treatment Condition on Dye-Sensitized Solar Cells

  • Kim, Jung-Kyu;Shin, Ka-Hee;Lee, Kun-Seok;Park, Jong-Hyeok
    • Journal of Electrochemical Science and Technology
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    • 제1권2호
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    • pp.81-84
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    • 2010
  • In dye-sensitized solar cells (DSSCs), the back transfer of photo-generated electrons from FTO glass to triiodide ions in an electrolyte is an important loss mechanism, which leads to low cell efficiency. Recently, this back electron transfer was greatly suppressed by the introduction of a compact $TiO_2$ blocking layer, which was prepared by the treatment of $TiCl_4$ solution. In the present work, more detailed $TiCl_4$ treated surface conditions on FTO substrate were investigated and DSSC performances were correlated with the surface morphology as well as dark current behavior.

Charge Balance in High Efficiency Blue Phosphorescent Organic Light Emitting Diodes

  • Chopra, Neetu;Lee, Jae-Won;So, Franky
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.184-187
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    • 2009
  • In this paper, we study effect of charge balance on performance of blue phosphorescent organic light emitting diodes (OLEDs). Charge balance determines the location of recombination zone in the OLEDs. By tuning the charge balance in iridium (III) bis[(4,6-difluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) based blue phosphorescent organic light-emitting devices (PHOLEDs) with a high mobility and high triplet energy electron transporting material, we were able to achieve a high current efficiency of 60 cd/A which is a 3X improvement over previous devices with 3,5'-N,N'-dicarbazole-benzene (mCP) host.

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Improved Performance of Organic Light-Emitting Diodes Using Novel Hole-transporting Materials

  • Kim, Young-Kook;Hwang, Seok-Hwan;Kwak, Yoon-Hyun;Lee, Chang-Ho;Yi, Jeoung-In;Lee, Jong-Hyuk;Kim, Sung-Chul
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.758-761
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    • 2009
  • The electroluminescent devices with the phenylnaphthyldiamine HTMs as the hole-transporting layer were more efficient than that with the biphenyldiamine HTM 1. Particularly, the life-time of the device IV using HTM 2 is about two times longer than that of the reference device III with HTM 1 within the measured current density, indicating more effective recombination at the emitting layer of device IV.

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