• 한국실내디자인학회논문집
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• 제14권3호
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• pp.114-121
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• 2005

Louis 1. Kahn was a wise architect who learned from history. He developed his own unique architecture by combining his creative sense with design principles and vocabularies that can be found in historical architecture. When restricting a space, he surrounded the space with thick walls as it had been done in historical buildings. The interior space encompassed by this method became a center-oriented and stable space. The objective of this study is to find the characteristics of Kahn's interior spaces by analyzing his projects in terms of space, form, daylight and materials. For this purpose, five works that are considered to have significance from the aspect of interior design were selected and analyzed. The characteristics realized through this study are as follows. A) Spatial features: 1) Generally speaking, each required space has been arranged symmetrically. 2) Being clearly defined as the main space, the subsidiary space, or the service space, each space also was placed very functionally. 3) The space encompassed by thick walls became a center-oriented, stable space. And in most case, it was characterized as a dark space. B) Formative features: 4) The space was defined as a basic solid such as a cylinder, a hexahedron, and an octagonal box, and was developed into a complex shape by the recessed windows. 5) Historical vocabularies such as an arch, a vault, and a dome were reinterpreted in new ways by kahn's own eyes. 6) Haying diverse shapes, the skylights enrich the space in terms of form. C) Daylight feature: 7) The vertical light entering through the skylights creates a solemn and mysterious atmosphere. 8) Given the shadows from the windows that change according to time, the interior space becomes a very vivid space. D) Material feature: 9) Harmonized with cold and smooth materials such as exposed concrete, metal, and glass, the interior space provides a modern atmosphere. 10) Warm appearing wood was used for furniture and part of walls or floors. The effective use of wood takes on a role that is quite complementary to the cold ambience of the smooth and cold materials. 11) With flexibility In building shapes, the concrete becomes the form-endowing materials.

• 대한전자공학회논문지
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• 제26권4호
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• pp.67-72
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• 1989

부분산화공정(LOCOS : local oxidation of silicon)에서 발생하는 새부리의 길이를 줄이기 위하여 상온 플라즈마 질화막을 잉요한 시로운 공정에 대해 연구하였다. 400W, 100kHz의 교류 전력에 의한 질소 플라즈마로 실리콘 위에 두께가 $100{\AA}$ 미만의 균일한 실리콘 질화막을 형성시킬 수 있었다. 이렇게 형성된 질화막은 실리콘을 4000${\AA}$두께로 산화시키는 공정에서 실리콘의 산화를 효과적으로 방지할 수 있었고 새부리의 길이를 0.2${mu}m$로 감소시킬 수 있다는 것을 SEM 단면도로 확인하였다. 이 길이는 두꺼운 LPCVD 질화막을 이용한 기존의 부분산화공정에서의 0.7${mu}m$ 보다 훨씬 줄어든 것이다. Secco에칭 후 SCM으로 단면을 보았을때 새부리 근처에서 결정 결함을 관찰할 수 없었다. 이 새로운 LOCOS공정으로 $N^+/P^-\;well,\;P^+/N^-$ well 다이오드를 만들어 누설전류를 측정하였다. 그 결과 기존의 LOCOS 공정에 의한 성질보다 우수하거나 동등한 성질을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.525-526
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• 2007

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

• Bulletin of the Korean Chemical Society
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• 제14권1호
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• pp.82-86
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• 1993

Two crystal structures of dehydrated $Ag_{3.3}Ca_{4.35}-A ({\alpha} = 12.256(2){\AA})$ and of its ethylene sorption complex (${\alpha} = 12.259(2){\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(l)$^{\circ}$C. Both crystals were dehydrated at 360$^{\circ}$C and $2{\times}10^{-6}$ Torr for 2 days and one crystal was treated with 200 Torr of ethylene at 24(2)$^{\circ}$C. The structures were refined to final error indices, $R_1$=O.065 and $R_2$ = 0.088 with 202 reflections and $R_1$=0.049 and $R_2$ = 0.044 with 259 reflections, respectively, for which I>3${\sigma}$(I). In these structures, all Ag$^+$ and Ca$^{2+}$ ions are located on two and three different threefold axes associated with 6-ring oxygens, respectively. In $Ag_{3.3}Ca_{4.35}-A{\cdot}6.65\;C_2H_4,\;3.3\;Ag^+\;and\;3.35\;Ca^{2+}$ ions are recessed 1.09 ${\AA}$ and 0.21 ${\AA}$, respectively, into the large cavity from the (111) plane at O(3). Each Ag$^+$ and Ca$^{2+}$ ion in the large cavity forms a complex with one $C_2H_4$$^{2+}$ ions and ethylene molecules are longer than those between Ag$^+$ ions and ethylene molecules.

• Bulletin of the Korean Chemical Society
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• 제19권1호
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• pp.98-103
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• 1998

The crystal structure of dehydrated $Rb^+$-exchanged zeolite X, stoichiometry $Rb_{71}Na_{21}-X\; (Rb_{71}Na_{21}Si_{100}Al_{92}O_{384})$ per unit cell, has been determined from single-crystal X-ray diffraction date gathered by counter methods. The structure was solved and refined in the cubic space group Fd3, a=25.007(3) Å at 21(1) ℃. The crystal was prepared by ion exchange in a flowing stream using a 0.05 M aqueous RbOH solution (pH=12.7). The crystal was then dehydrated at 360 ℃ and $2{\times}10^{-6}$ torr for two days. The structure was refined to the final error indices, $R_1=0.047$ and $R_2=0.040$ with 239 reflections for which I> 3σ(I). In this structure, 71 $Rb^+$ ions per unit cell are found at six different crystallographic sites and 21 $Na^+$ ions per unit cell are found at two different crystallographic sites. Four and a half $Rb^+$ ions are located at site Ⅰ, the center of the hexagonal prism. Nine $Rb^+$ ions are found at site Ⅰ' in the sodalite cavity (Rb-O=2.910(15) Å and O-Rb-O=78.1(4)°). Eighteen $Rb^+$ ions are found at site Ⅱ in the supercage (Rb-O=2.789(9) Å and O-Rb-O=92.1(4)°). Two and a half $Rb^+$ ions, which lie at site Ⅱ', are recessed ca. 2.07 Å into the sodalite cavity from their three O(2) oxygen planes (Rb-O=3.105(37) Å and O-Rb-O=80.6(5)°). Thirty-two $Rb^+$ ions are found at site Ⅲ deep in the supercage (Rb-O=2.918(12) Å and O-Rb-O=71.9(4)°), and five $Rb^+$ ions are found at site Ⅲ'. Seven $Na^+$ ions also lie at site Ⅰ. Fourteen $Na^+$ ions are found at site Ⅱ in the supercage (Na-O=2.350(19) Å and O-Na-O=117.5(6)°).

• 한국표면공학회지
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• 제56권2호
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• 한국결정학회지
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• 제3권1호
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• pp.9-22
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• 1992

Cd2+ 이온으로 이온 교환된 제올라이트 A를 진공 탈수한 후 브롬을 흡착한 두개의 결정구조를 단결정 X-선 회절법으로 해석하였다. 이들 결정은 21℃에서 입방공간군 Pm3m을 사용하여 해석하고 정산(정산)하였다. 두 결정은 Cd(NO3)a와 Cd(OOCCH3)a의 물분율이 1 : 1이고 전체농도가 0.05M 되도록 만든 혼합용액을 이용하여 흐름법으로 이온교환하여 제조하였다. 첫번째 결정은 450℃에서 2 ×10-6 Torr의 진공하에서 2일간 탈수하였고, 두번째 결정은 650℃에서 2 ×10-sTorr 의 진공하에서 2일간 탈수하였다. 두 결정을 24℃에서 약 160Torr의 브롬증기로 반응시켰다. Fullmatrix 최소자승법 정산에서 첫번째 결정(a=12. 250(1) A)과 두번째 결정(a=12.204(2) k)의 마지막 오차인자는 I>3e(I)인 212개의 독립반사를 사용하여 Rl=0.075, R2=0.079이며 128개의 독립반사를 사용하여 Rl=0.089, R2=0.078까지 각각 정산하였다. 두 결정에서 단위세포당 6개의 Cd2+ 이온은 6-링 산소와 결합하면서 결정학적으로 서로 다른 2개의 3회 회전축상에 위치하고 있었다. 4.5개의 Cd2+이온은 Brs 혹은 Br3-의 이온과 착물을 형성하기 위해서 0(3)의 (111)평면에서 큰 동공쪽으로 약 0.441 차 들어가 있었다. 나머지 1.5개의 Cd2+이온은 0(3)의 (111)평면에서 Sodalite동공 깊숙히 약 0.678 입 들어간 자리에 위치하였다. 단위세포당 약 1.5개의 Brs-와 1.5 개의 Br3-이온이 흡착되었다. Brs-이온결합은 2 개의 Cd2+이온과 골조 산소이온과 착물을 이룸으로써 안정화되었다. Br3-이온은 한 개의 Cd2+이온 과 골조 산소이온과 결합하고 있었다. 생성된 Br3 -와 Brs-는 브롬 분자가 잔류하는 물분자와 반응하여 다음과 같이 생성할 수 있다.

• 대한화학회지
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• 제35권3호
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• pp.189-195
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• 1991

탈수한 $(Ag_{2.8}Zn_{4.6}-A)$의 구조와 이 결정에 에틸렌 기체가 흡착된 구조를 X-선 단결정 회절법으로 입방공간군인 Pm3m을 사용하여 구조를 해석하고 정밀화시켰다. $Ag^+$ 이온 및 $Zn^{2+}$ 이온으로 이온교환시킨 두 개의 결정을 400$^{\circ}$C, $2.0{\times}10^{-6}$Torr의 진공하에서 2일간 탈수시킨 후, 그 중 하나의 결정에는 25(1)$^{\circ}$C에서 250 Torr의 에틸렌 기체를 1시간 동안 처리하였다. 탈수한 $Ag_{2.8}ZN_{4.6}-A$ (a = 12.137(2) ${\AA}$)의 결정구조는 I > 3${\sigma}$(I)인 237개의 회절점을 사용하여 $R_w$ 값이 0.044까지 정밀화시켰고, 에틸렌을 흡착시킨 $Ag_{2.8}ZN_{4.6}-A{\cdot}5.6C_2H_4$(a = 12.137(2) ${\AA}$)의 결정구조에서는 301개의 회절점을 사용하여 $R_w$값이 0.050까지 정밀화시켰다. 2.8개의 $Ag^+$ 이온은 에틸렌 분자와 ${\pi}$착물을 형성하며, 6-링 평면에서 큰 동공쪽으로 0.922(2) ${\AA}$이동한 위치에 골조의 산소와 2.240(5)${\AA}$에서 결합하고 있었고, 에틸렌 분자의 탄소원자와 2.290(5)${\AA}$에서 결합하고 있었다. $Zn^{2+}$ 이온은 단위세포단 두 개의 서로 다른 3회 회전축상에 위치하고 있으며, 이 중 2.8개의 $Zn^{2+}$ 이온은 에틸렌 분자와 ${\pi}$착물을 형성하며, (111) 평면에서 큰 동공쪽으로 0.408(2)${\AA}$이동한 위치에 골조의 산소와 결합하고 있었다. $Zn^{2+}$ 이온과 에틸렌 분자의 탄소원자간 결합거리는 2.78(4)${\AA}$이며, 이는 비교적 약한 결합임을 나타낸다.

• 대한화학회지
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• 제39권1호
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• pp.7-13
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• 1995

$Ca^{2+}$ 이온으로 완전히 치환된 제올라이트 $X(Ca_{46}Al_{92}Si_{100}O_{384})$와 $Ca^{2+}$ 이온과 $K^+$ 이온으로 치환된 제올라이트 $X(Ca_{46}Al_{92}Si_{100}O_{384})$를 $360^{\circ}C에서2{\times}10^{-6}$ Torr의 진공하에서 탈수한 구조를 $21^{\circ}C에서$ 입방공간군 Fd3을 사용하여 단결정 X-선 회절법으로 해석하고 구조를 정밀화하였다. 탈수한 $Ca_{46}-X$의 구조는 Full-matrix 최소자승법 정밀화 계산에서 $I>3\sigma(I)인$ 166개의 독립반사를 사용하여 최종오차인자를 R_1=0.096,\;R_2=0.068$까지 정밀화 계산하였고, $Ca_{32}K_{28}-X$의 구조는 130개의 독립반사를 사용하여 R_1=0.078,\;R_2=0.056$까지 정밀화시켰다. 탈수된 $Ca_{46}-X$에서 $Ca^{2+}$ 이온은 점유율이 높은 서로 다른 두개의 자리에 위치하고 있었다. 16개의 $Ca^{2+}$ 이온은 이중 6-산소고리(D6R)의 중심에 위치하였고(자리 I; $(Ca(1)-O(3)=2.51(2)\AA)$, 30개의 $Ca^{2+}$ 이온은 큰 동공쪽으로 약 0.44 $\AA$ 들어간 자리에 위치하고 있다(Ca(2)-O_(2)=2.24(2) $\AA$, $O(2)-Ca(2)-O(2)=119(1)^{\circ}).$ 탈수한 $Ca_{32}K_{28}-X$의 구조에서 모든 $Ca^{2+}$ 이온과 $K^+$ 이온은 4개의 서로 다른 결정학적 자리에 위치하고 있었다 : 16개의 $Ca^{2+}$ 이온은 D6R의 중심에 위치하였고, 다른 16개의 $Ca^{2+}$ 이온과 16개의 $K^+$ 이온은 큰 동공에 있는 자리 II에 각각 위치하고 있었다. 이러한 $Ca^{2+}$ 이온과 $K^+$ 이온은 O(2)의 평면에서 큰 동공쪽으로 약 0.56 $\AA$과 1.54 $\AA$ 들어간 자리에 각각 위치하고 있었다. $(Ca(2)-O(2)=2.29(2)\AA$, $O(2)-Ca(2)-O(2)=119(1)^{\circ}$, $K(1)-O(2)=2.59(2)\AA$, and $O(2)-K(1)-O(2)=99.2(8)^{\circ}).$ 12개의 $K^+$ 이온은 큰 동공에 있는 자리 III에 위치하고 있었다. $(K(2)-O(4)=3.11(6)\AA$ and $O(1)-K(2)-O(1)=128(2)^{\circ}).$

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).