• 대한두경부종양학회:학술대회논문집
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• 2008.11a
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• pp.235-238
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• 2008

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.11a
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• pp.57-98
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• 2005

• Proceedings of the Botanical Society of Korea Conference
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• 1996.07a
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• pp.1-3
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• 1996

• 대한생식의학회:학술대회논문집
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• 2006.06a
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• pp.102-103
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• 2006

• 한국전기화학회:학술대회논문집
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• 2004.06a
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• pp.61-64
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• 2004

• Journal of Pharmaceutical Investigation
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• v.18 no.4
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• pp.217-227
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• 1988

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.71.4-71
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• 1998

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.11-11
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• 2014

• Journal of Plant Biotechnology
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• v.43 no.4
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• pp.405-410
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• 2016

Auxins are essential in plant growth and development. The auxin-stimulated elongation of plant cells has been explained by the "acid-growth theory", which was proposed forty years ago. According to this theory, the auxin activates plasma membrane $H^+-ATPase$ to induce proton extrusion into the apoplast, promoting cell expansion through the activation of cell wall-loosening proteins such as expansins. Even though accepted as the classical theory of auxin-induced cell growth for decades, the major signaling components comprising this model were unknown, until publication of recent reports. The major gap in the acid growth theory is the signaling mechanism by which auxin activates the plasma membrane $H^+-ATPase$. Recent genetic, molecular, and biochemical approaches reveal that several auxin-related molecules, such as TIR1/AFB AUX/IAA coreceptors and SMALL AUXIN UP RNA (SAUR), serve as important components of the acid-growth model, phosphorylating and subsequently activating the plasma membrane $H^+-ATPase$. These researches reestablish the four-decade-old theory by providing us the detailed signaling mechanism of auxininduced cell growth. In this review, we discuss the recent research progress in auxin-induced cell elongation, and a set of possible future works based on the reestablished acid-growth model.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.38-45
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• 2020

With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.