• 한국정보통신학회논문지
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• 제15권10호
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• pp.2209-2216
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• 2011

본 논문에서는 Magnachip $0.18{\mu}m$ 공정을 이용하여 PMIC용 32bit eFuse OTP IP를 설계하였다. eFuse 링크 아래에 N-Well을 두어 프로그램시 eFuse 링크와 p-기판의 VSS가 단락되는 문제점을 해결하였다. 그리고 디코딩된 WERP (WL Enable for Read or Program) 신호가 eFuse OTP 메모리로 바로 입력되는 경우 듀얼 포트 eFuse OTP 메모리 셀의 RWL (Read Word-Line)과 WWL (Write Word-Line)을 선택적으로 활성화해 주는 WL 구동회로를 제안하였다. 또한 BL 프리차징 회로에서 delay chain을 제거하여 제어회로의 레이아웃 면적을 줄였다. 메모리 테스트 장비를 이용하여 제작된 94개의 샘플 die를 측정한 결과 5.5V의 프로그램 전압에서 100%의 수율을 얻었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.419-421
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• 1996

We propose the digitized pressure sensor and the interface circuit to read directly the pressure signal in the digital form. The interface circuit has the control clock, comparator, and bit value decision circuit. The digitized sensor and interface circuit are integrated on the one chip using the post processing after IC fabrication. The dimension of the fabricated digitized pressure sensor is $3{\times}6{\times}1mm^3$.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.102-106
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• 1999

We have designed and fabricated a four-bit shift register circuit using YBCO bicrystal junctions and experimentally tested its operations by a computer-controlled digital measurement set-up. Laser ablated YBCO thin films with clean surface were used in this work. The circuit consists of the shift register and two read SQUIDs placed next to each sides of the shift register. The SQUIDs were inductively coupled to the nearby shift register stages. A probe equipped with high speed coax lines were used in this experiment. The major obstacle in testing the circuit was the interference between the read SQUIDs and we solved the problem by finding the correct operation points of the SQUIDs from the simultaneously measured modulation curves. Loaded Data("1" or "0") were successfully shifted from a stage to the next one by a controlled current pulse injected to the bias lines located between the stages and the data shifts were correctly monitored by the read SQUIDs

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.173-179
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• 2002

We propose a novel sensing circuit for 2T-2MTJ MRAM that can be used for high speed synchronous operation. Proposed bit-line sense amplifier detects small voltage difference in bit-lines and develops it into rail-to-rail swing while maintaining small voltage difference on TMR cells. It is small enough to fit into each column that the whole data array on selected word line are activated as in DRAMs for high-speed read-out by changing column addresses only. We designed a 256Kb read-only MRAM in a $0.35\mu\textrm{m}$ logic technology to verify the new sensing scheme. Simulation result shows a 25ns RAS access time and a cycle time shorter than 10 ns.

• 대한전자공학회논문지
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• 제15권3호
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• pp.11-17
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• 1978

Medium scale 집적회로인 BCD to seven segment decoder/driver를 P-channel Metal-Oxide-Semiconductor집적회로 제작 기법으로 설계, 제작하였다. 본 소자는 특별히 common cathode seven segment light emitting diode에 적합하도록 설계되었다. decoder logic은 직렬로 연결된 두 개의 Read-Only-Memory로 구성되어 있으며 driver로는 channel이 넓은 FET를 사용하였다. 제작된 집적회로는 전원 전압이 -7 volt에서 -26 volt까지 변화할 때 정상적으로 동작하였으며 LED각 segment 전류의 non-uniformity는 약 ±10%이었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.199-202
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• 2000

RFID (Radio Frequency Identification) is a technique which is used for identifying different types of objects and tracking people and animals. Passive RFID consists of reader, a passive tag. The reader transmit energy to a tag and read information back from tag. The tag is energized by a carrier frequency which is transmitted by the reader and transmit information back to the reader. In this paper, the circuit for read and write RFID system is presented. The presented RFID system adopts 125kHz carrier frequency, backscattering and PSK for communication method.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1991년도 추계종합학술발표회논문집
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• pp.137-140
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• 1991

The TDX-10 Time Switch architecture has modularity, high reliability and considerable large switch fabric having separated and both-way 1K time slot interchange switching circuit elements. In this paper, we present key functions, architecture, features and traffic characteristic of TDX-10 Time Switch. And we also describe some basic implementation technologies such as Frame Base Read-Write Separation Method, Multi-Write Method and Read-Write Separation Technique with Dual-port Memory.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.76-78
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• 2003

We have designed and tested an RSFQ (Rapid Single Flux Quantum) NDRO (Non Destructive Read Out) circuit for the development of a high speed superconducting ALU (Arithmetic Logic Unit). When designing the NDRO circuit, we used Julia, XIC and Lmeter for the circuit simulations and layouts. We obtained the simulation margins of larger than $\pm$25％. For the tests of NDRO operations, we attached the three DC/SFQ circuits and two SFQ/DC circuits to the NDRO circuit. In tests, we used an input frequency of 1 KHz to generate SFQ Pulses from DC/SFQ circuit. We measured the operation bias margin of NDRO to be $\pm$15％. The circuit was measured at the liquid helium temperature.

• 센서학회지
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• 제29권4호
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• pp.270-274
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• 2020

In this study, a read-out integrated circuit (ROIC) that can be applied to a colorimetry-based optical sensor for analyzing total phosphorus and total nitrogen was developed and characterized. The proposed ROIC minimizes the effect on temperature fluctuation, improves sensitivity, and extends the dynamic range by utilizing a dual optical path and feedback control circuit. Using a dual optical path makes it possible to calibrate the output signal of the optical sensor automatically, along with the temperature fluctuation. The calibrated voltage is fed back into the measurement stage; thus, the output current of the measurement is adaptively controlled. As a result, the sensitivity and dynamic range of the proposed ROIC are improved. Finally, a total-phosphorus analysis was conducted by utilizing the ROIC. The ROIC was found to operate stably over a wide temperature range.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.88-94
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• 2011

In this paper, we design a 1-kb OTP (Onetime programmable) memory IP in consideration of BCD process based EM (Electro-migration) and resistance variations of eFuse. We propose a method of precharging BL to VSS before activation of RWL (Read word-line) and an optimized design of read NMOS transistor to reduce read current through a non-programmed cell. Also, we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse. Peak current through the non-programmed eFuse is reduced from 728 ${\mu}A$ to 61 ${\mu}A$ when a simulation is done in the read mode. Furthermore, BL (Bit-line) sensing is possible even if sensed resistance of eFuse has fallen by about 9 $k{\Omega}$ in a wafer read test through a variable pull-up load resistance of BL S/A (Sense amplifier).