• 제목/요약/키워드: read-circuit

검색결과 139건 처리시간 0.025초

비휘발성 단일트랜지스터 강유전체 메모리 회로 (Memory Circuit of Nonvolatile Single Transistor Ferroelectric Field Effect Transistor)

  • 양일석;유병곤;유인규;이원재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.55-58
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    • 2000
  • This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

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2-Transistor와 2-Resister 구조의 MRAM cell을 위한 CMOS Macro-Model (A CMOS Macro-Model for MRAM cell based on 2T2R Structure)

  • 조충현;고주현;김대정;민경식;김동명
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.863-866
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    • 2003
  • Recently, there has been growing interests in the magneto-resistive random access memory (MRAM) because of its great potential as a future nonvolatile memory. In this paper, a CMOS macro-model for MRAM cell based on a twin cell structure is proposed. The READ and WRITE operations of the MTJ cell can be emulated by adopting data latch and switch blocks. The behavior of the circuit is confirmed by HSPICE simulations in a 0.35-${\mu}{\textrm}{m}$ CMOS process. We expect the macro model can be utilized to develope the core architecture and the peripheral circuitry. It can also be used for the characterization and the direction of the real MTJ cells.

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초고주파수 진동 감지를 위한 이온 질량기반 진동센서 (Ion-Based Micro Vibration Sensor for Ultra-High Frequency Vibration Detection)

  • 김광호;서영호
    • 대한기계학회논문집A
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    • 제32권9호
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    • pp.728-732
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    • 2008
  • This paper presents ion-based micro vibration sensor for the ultra-high frequency vibration detection. Presented sensor uses the motion of anion and cation in an electrolyte. Electrolyte vibration sensors have the high shock survival characteristics and a simple read-out circuit because of the small mass and own charges of ions. Presented sensor measures the induced electric potential by the mechanical-electrical coupling. It consist of electrolyte chamber and detection electrode. Electrolyte chamber was fabricated by PDMS molding. Detection electrode was made of gold evaporation on pyrex glass. Size of electrolyte chamber was designed as $600{\times}600{\times}100um$. Detection electrode had 200nm-thick and 42um-gap. In the experimental study, 5.8M sodium Chloride (NaCl) solution was used as electrolyte in 36nl-chamber. Mechanical vibration was measured from 2kHz to 4MHz.

Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories

  • Kim, Young Su;Min, Kyeong-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.539-545
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    • 2013
  • In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of $TiO_2$ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.

Dynamic Power Supply Current Testing for Open Defects in CMOS SRAMs

  • Yoon, Doe-Hyun;Kim, Hong-Sik;Kang, Sung-Ho
    • ETRI Journal
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    • 제23권2호
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    • pp.77-84
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    • 2001
  • The detection of open defects in CMOS SRAM has been a time consuming process. This paper proposes a new dynamic power supply current testing method to detect open defects in CMOS SRAM cells. By monitoring a dynamic current pulse during a transition write operation or a read operation, open defects can be detected. In order to measure the dynamic power supply current pulse, a current monitoring circuit with low hardware overhead is developed. Using the sensor, the new testing method does not require any additional test sequence. The results show that the new test method is very efficient compared with other testing methods. Therefore, the new testing method is very attractive.

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방사선 치료위치 검증을 위한 다이오드 검출기의 특성에 관한 연구 (A Study on Characteristics of Diode Detecter for Verification of Radiation Therapy)

  • 이동훈;김윤종;지영훈;이동한;홍승홍
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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    • pp.106-109
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    • 2000
  • The diode characteristics for therapy radiation sensor have been studied by irradiating therapy radiation from the MM22 microtron accelerator. Signal processing has been performed in the pulse mode which can process the signal fast. We have designed integrator, peak detector and synchronization circuit to detect diode signal in the pulse mode for implementation of portal image. We also read the diode signal by A/D board and displayed the peak value with LabView program. Because the quality of portal image obtained by film in the case of therapy radiation is much worse than that of diagnostic film, Digital radiography system by rectifier diode detector was suggested for portal Image.

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마이크로 프로세서를 이용한 미숙아 보육기 시스템 (Development of the Infant Incubator Using Micro Processor)

  • 차동익;이성용;김종만;서규영;박민용
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1992년도 추계학술대회
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    • pp.83-85
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    • 1992
  • In this paper, the Infant Incubator Consisting of amp lifer, A/D Convert, I/O Expand, Watchdog Timer, Alarm Circuit. Display, and mirco-Computer part was developed. The care of Premature new borns of the required that they be in an environment in which temperature is elevaled and Controlled, because they are unable to regulated their own temperature. The central and processing methods based on micro-processor employ the flexibility, and economy over other conventional system. The system characteristic were as follows 1) system based on micro-processor. 2) Easy-to read, touch-Operate control panel all displays and indicators 3) System flexibility.

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솔라셀과 RF송수신기를 이용한 무선인식장치 (A Wireless Identification System Using a Solar Cell and RF Transceivers)

  • 이성호
    • 센서학회지
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    • 제25권5호
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    • pp.337-343
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    • 2016
  • In this paper, we newly introduce a wireless identification system using a solar cell and RF transceivers. The reader sends interrogating signal to a transponder using LED visible light, and the transponder responds to the reader using RF signal. The transponder consists of a solar cell, an amplifier, a microprocessor, and an RF transmitter. The solar cell receives the visible light from the reader and generates current to supply electric power to the other devices in the transponder. At the same time, the solar cell detects interrogating signal in the reader light. The microprocessor senses the interrogating signal and generates a responding signal. The RF transmitter radiates the responding signal to the reader. The transponder is a passive circuit because it operates without external power. In experiments, the maximum read distance between a reader and a transponder was about 1.6 meter.

A Scaling Trend of Variation-Tolerant SRAM Circuit Design in Deeper Nanometer Era

  • Yamauchi, Hiroyuki
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.37-50
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    • 2009
  • Evaluation results about area scaling capabilities of various SRAM margin-assist techniques for random $V_T$ variability issues are described. Various efforts to address these issues by not only the cell topology changes from 6T to 8T and 10T but also incorporating multiple voltage-supply for the cell terminal biasing and timing sequence controls of read and write are comprehensively compared in light of an impact on the required area overhead for each design solution given by ever increasing $V_T$ variation (${\sigma}_{VT}$). Two different scenarios which hinge upon the EOT (Effective Oxide Thickness) scaling trend of being pessimistic and optimistic, are assumed to compare the area scaling trends among various SRAM solutions for 32 nm process node and beyond. As a result, it has been shown that 6T SRAM will be allowed long reign even in 15 nm node if ${\sigma}_{VT}$ can be suppressed to < 70 mV thanks to EOT scaling for LSTP (Low Standby Power) process.

차동 입력단 구조를 이용한 비냉각형 적외선 센서용 신호 검출회로의 설계 (The Design of a Read-Out Circuit for Uncooled Infrared Sensor by Using Differential Input Stage)

  • 홍승우;황상준;박상원;정은식;강이구;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.180-182
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    • 2005
  • 비냉각형 적외선 검출 회로 설계 시 공정상 변화에 의해 발생하는 센서의 저항값 변동이 크다. 본 논문에서는 이것을 해결하기 위해 차동적 입력 수신 구조를 이용한 방법을 제시하였다. 볼로미터 타입 비냉각형 적외선 영상 센서 회로는 입사된 적외선 에너지 양에 따라 센서의 저항값이 변하는 특성을 이용하며 그에 따른 전압 또는 전류의 변화를 측정하여 적외선의 파장을 알아내는 방식으로 검출회로 설계 시 가장 큰 문제점인 공정상의 변화 등으로 인한 신호검출 회로의 오동작을 개선하기 위하여 검출회로의 입력단을 차동적으로 받아들이도록 설계하였다.

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