• Journal of the Korean Ceramic Society
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• v.42 no.11 s.282
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• pp.763-769
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• 2005

Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

• Journal of Information Technology Services
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• v.8 no.1
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• pp.99-111
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• 2009

Rapid growth of Management Information System (MIS) and evolution of software system enlarge maintenance necessity and it needs a process to implement information system service in business. This paper proposes service-oriented maintenance process of component software based on service design and implementation provided by existing processes for maintenance, MaRMI-RE and ITIL. The proposed process derives activities and tasks of the process by identifying services according to service guidelines. Service-oriented maintenance process is produced by analyzing correlation between the derived activities and tasks and MaRMI-RE's and adding the tasks to MaRMI-RE. To verify availability of the proposed service-oriented maintenance process, correlation between artifacts is proved.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.8
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• pp.1690-1697
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• 2002

The effects of re-peening on the fatigue damaged material are studied in this paper. The effects of re-peening process on surface hardness, surface roughness, surface compressive residual stress, and fatigue life are investigated. The results can be summarized in brief as follows: The depth of hardening layer was increased by re-peening process. There is no large variation of the surface roughness by re-peening process. The compressive residual stress of shot-peened specimen decreases under the fatigue loading and then increases again by re-peening process. Re-peening process increases the fatigue lifo of shot-peened and fatigue damaged specimen. The increase of fatigue lift under high stress level is much higher than under low stress level.

• Journal of KIISE:Software and Applications
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• v.29 no.9
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• pp.619-630
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• 2002

The various software engineering techniques have been come out in order to cope with the software crisis since 1980's. The software Engineering has focused on the process of software component development. The process products a development guide for a quality and productive improvement of software. But, most of the methodologies assume that a new system will be constructed and reused in the future. these do not actually support efficiently how we reuse legacy system's resources and construct a new system. In this paper, we present an efficient Reengineering Process for reusing legacy systems, RUP+re, which extends and customizes RUP. Rup+re consists of Reverse Engineering Workflow, Re-Engineering Workflow and forward Engineering Process. We describe RUP+re's workflows with their own detail steps and verify them practically through the case study. So, we provide efficient guidelines to the software Reengineering process construction which reuses the resources of a legacy system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• Journal of Powder Materials
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• v.16 no.1
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• pp.16-21
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• 2009

Nanostructured $ReSi_{1.75}$ was synthesized to have high density via rapid and cost effective process named as high-frequency induction heated combustion synthesis(HFIHCS) method. For the process, mechanically activated Re-Si powder was used, which had been prepared by mechanical ball milling of Re and Si powders with mixing ratio of 1:1.75. Both combustion synthesis and densification were accomplished simultaneously by applying electric current and mechanical pressure of 80 MPa during the process. The average grain size, hardness, and fracture toughness of the compound were 210 nm, 1085 $kg/mm^2$ and 4 $MPa{\cdot}m^{1/2}$, respectively. The experimental results show that HFIHCS is a promising process for synthesis of nanostructured $ReSi_{1.75}$ which has a potential for both high temperature and thermo-electric applications.

• Journal of Ocean Engineering and Technology
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• v.32 no.5
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• pp.372-379
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• 2018

High-pressure gas injection engines (HPGI) took center stage in LNG carrier propulsion systems after their advent. The HPGI engine system can be easily modified to include a re-liquefaction system by adding several devices, which can significantly increase the economic feasibility of the total system. This paper suggests the optimal operating conditions and capacity for a re-liquefaction system for an LNG carrier, which can minimize increases in the total annualized cost. The installation of a re-liquefaction system can save 0.23 million USD per year when the cost of LNG is 5 USD/Mscf. A sensitivity analysis with different LNG costs showed that the re-liquefaction system is profitable when the LNG cost is higher than 3.5 USD/Mscf.

• Journal of the Korea Society for Simulation
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• v.29 no.1
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• pp.57-69
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• 2020

Many researchers have recommended that DBR scheduling would be an efficient method to maintain the balance of their workload among many processes in the general flow shop. However, as product variety has increased in recent years, the process has become more complex and requires the re-entrance of raw materials and work in process. The re-entrant line has known for the complex manufacturing process that raw materials are repeatedly processed on the same machine. This study reviews the applicability of DBR against the re-entrant manufacturing line due to the distinguishing characteristics and the higher complexity caused by multiple visits of a job into the identical process. In order to apply the DBR method to the re-entrant process, the main idea is to reconstruct re-entrant process into a virtual flow process(loop) that has a single bottleneck. This study discusses the following two questions. First, DBR is also superior to traditional scheduling methods against re-entrant manufacturing line. And how we structure and detect the system bottleneck (or sub-bottleneck) through drum-buffer-rope concepts. To answer the above questions, we experimented and analyzed the effects of the applicability of DBR under the general re-entrant process model(TRC, Technology Research Center). As a result, we have identified a balance between loops for cycle time and work in process.

• Journal of the Korea Convergence Society
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• v.11 no.10
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• pp.1-7
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• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.51-52
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• 2018

Selective oxidation of RE elements from the U/RE metal ingot was studied in this paper using electrochemical process. Constant potential of -1.7V was applied between anode and cathode, where the potential value corresponds to standard potentials between actinide and rare earth materials. When the current values approached to nearly 0 mA, the reaction was finished. It is confirmed from the EPMA analysis that only U part of the U/RE ingot was remained. The metal recovered to the zinc cathode was obtained through the distillation process and it is being chemically analyzed in the KAERI analytical laboratory.