• 제목/요약/키워드: rapid thermal process

검색결과 452건 처리시간 0.028초

The Influence of Rapid Thermal Annealing Processed Metal-Semiconductor Contact on Plasmonic Waveguide Under Electrical Pumping

  • Lu, Yang;Zhang, Hui;Mei, Ting
    • Journal of the Optical Society of Korea
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    • 제20권1호
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    • pp.130-134
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    • 2016
  • The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

RF 스퍼터링 및 급속열처리 공정으로 제작한 ZnS:Nd 박막의 구조 및 광학적 특성 (Structure and Optical Properties of ZnS:Nd Thin filmsss Produced by RF Sputtering and Rapid Thermal Annealing Process)

  • 김원배
    • 한국전자통신학회논문지
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    • 제16권2호
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    • pp.233-240
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    • 2021
  • 다양한 함량으로 네오디뮴이 도핑된 황화아연 박막제작은 RF 마그네트론 스퍼터링 장비를 이용하여 황화아연과 네오디뮴을 동시 증착하여 박막을 제작하였고, 후처리 공정으로 급속열처리를 400℃ 에서 30분간 실시하였다. 다양한 네오디뮴의 도핑 함량(0.35at.%, 1.31at.%, 1.82at.% 및 1.90at.%)을 갖는 ZnS 박막의 구조, 형태, 광학적 특성을 연구하였다. X-선 회절 패턴은 모든 박막에서 (111)방향의 큐빅 구조로 성장하였다. SEM 이미지와 AFM 이미지를 통해 네오디뮴 도핑 함량에 의한 박막의 표면 및 구조적 형태에 대하여 설명하였다. EDAX를 통해 다른 불순물이 포함되지 않은 Zn, S 및 Nd의 원소만을 확인하였다. UV-vis 스펙트럼을 이용하여 제작된 박막의 투과율과 밴드갭을 확인하였다.

쾌속조형과 스크린 인쇄기술을 이용한 빌드업인쇄회로기판의 제조공정기술개발 (Development of Build-up Printed Circuit Board Manufacturing Process Using Rapid Prototyping Technology and Screen Printing Technology)

  • 조병희;정해도;정해원
    • 한국정밀공학회지
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    • 제17권2호
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    • pp.130-136
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    • 2000
  • Generally, the build-up printed circuit board manufactured by the sequential process with etching, plating, drilling etc. requires many types of equipments and lead time. Etching process is suitable for mass production, however, it is not adequate for manufacturing prototype in the developing stage. In this study, we introduce a screen printing technology to prototyping a build-up printed circuit board. As for the material, photo/thermal curable resin and conductive paste are used for the formation of dielectric and conductor. The build-up structure is made by subsequent processes such as the formation of liquid resin thin layer, the solidification by UV/IR light, and via filling with conductive paste. By use of photo curable resin, productivity is greatly enhanced compared with thermal curable resin. Finally, the basic concept and the possibility of build-up printed circuit board prototyping are proposed in comparison with to the conventional process.

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Film Boiling Chemical Vapor Infiltration of C/C Composites: Influence of Mass and Thermal Transfers

  • Delhaes, P.;Trinquecoste, M.;Derre, A.;Rovillain, D.;David, P.
    • Carbon letters
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    • 제4권4호
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    • pp.163-167
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    • 2003
  • The "Film boiling" Chemical Vapor Infiltration (CVI) process is a rapid densification one developed in particular for the elaboration of carbon/carbon composite materials. In order to optimize this new thermal gradient process, we have carried out several studies, on one hand, about the nature of the complex chemical reactions in a confined medium, and on the other hand, relative to the role of heat and mass transfers inside the preform. We show in this study that the introduction of a permeable sheath around the preform leads to hybrid liquid/gas CVI process which presents the advantages of very high densification rates associated with a moderate input energy.

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급속 열처리 시스템의 개발 및 응용 (Development and Application of Rapid Thermal Process System)

  • 김윤태;정기로;김호영;김현태;유형준
    • 대한전자공학회논문지
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    • 제25권9호
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    • pp.1051-1059
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    • 1988
  • In this study, we developed a proto-type RTP equipment by using tungsten halogen lamps. The system has been designed utilizing the result of the numerical analysis of the reactor. In order to analyze the system performance, experiments for activation of implanted atoms and oxidation process were performed. As a result, we obtained 2-3% uniformity in sheet resistance and 2-4% uniformity in oxide thickness, although after a long time process at high temperatures slip lines and warpage of the wafer have been observed.

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ReMnO3(Re:Ho, Er) 박막의 강유전성에 미치는 열처리 공정의 영향 (Effects of Thermal Heat Treatment Process on the Ferroelectric Properties of ReMnO3 (Re:Ho, Er) Thin Films)

  • 김응수;채정훈
    • 한국세라믹학회지
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    • 제42권11호
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    • pp.763-769
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    • 2005
  • Ferroelectric $ReMnO_3$(Re:Ho, Er) thin films were deposited on Si(100) substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). Crystallinity and electric properties of $ReMnO_3$(Re:Ho, Er) thin films were investigated as a function of thermal heat treatment process, CHP (Conventional Heat-treatment Process) and RTP (Rapid Thermal Process). $ReMnO_3$(Re:Ho, Er) thin films prepared by RTP showed higher c-axis preferred orientation and homogeneous surface roughness than those prepared by CHP. The remnant polarization of ferroelectric hysteresis loop of $ReMnO_3$(Re:Ho, Er) thin films was strongly dependent on the c­axis preferred orientation of hexagonal single phase, and the leakage current characteristics of thin films were dependent on the homogeneity of grain size as well as surface roughness of thin films.

급속 금형가열 시스템 개발을 위한 고주파 유도가열 과정의 유한요소해석 (Finite Element Analysis of Induction Heating Process for Development of Rapid Mold Heating System)

  • 황재진;권오경;윤재호;박근
    • 소성∙가공
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    • 제16권2호
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    • pp.113-119
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    • 2007
  • Rapid mold heating has been recent issue to enable the injection molding of thin-walled parts or micro/nano structures. Induction heating is an efficient way to heat material by means of an electric current that is caused to flow through the material or its container by electromagnetic induction. It has various applications such as heat treatment, brazing, welding, melting, and mold heating. The present study covers a finite element analysis of the induction heating process which can rapidly raise mold temperature. To simulate the induction heating process, the electromagnetic field analysis and transient heat transfer analysis are required collectively. In this study, a coupled analysis connecting electromagnetic analysis with heat transfer simulation is carried out. The estimated temperature changes are compared with experimental measurements for various heating conditions.

급속응고기술에 의한 n-type 90%$Bi_{2}Te_{3}+10% Bi_{2}Se_{3}$ 열간압축제의 열전특성 (Thermoelectric Properties of n-type 90%$Bi_{2}Te_{3}+10% Bi_{2}Se_{3}$ Materials Prepared by Rapid Solidification Process and Hot Pressing)

  • 김익수
    • 한국분말재료학회지
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    • 제3권4호
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    • pp.253-259
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    • 1996
  • The efficiency of thermoelectric devices for different applications is known to depend on the thermoelectric effectiveness of the material which tends to grow with the increase of its chemical homogeneity. Thus an important goal for thermal devices is to obtain chemically homogeneous solid solutions. In this work, the new process with rapid solidification (melt spinning method) followed by hot pressing was investigated to produce homogeneous material. Characteristics of the material were examined with HRD, SEM, EPMA-line scan and bending test. Property variations of the materials were investigated as a function of variables, such as dopant ${CdCl}_{2}$ quantity and hot pressing temperature. Quenched ribbons are very brittle and consist of homogeneous $Bi_2Te_3$, ${Bi}_{2}{Se}_{3}$ solid solutions. When the process parameters were optimized, the maximum figure of merit was 2.038$\times$$10^{-3}K^{-4}. The bending strength of the material hot pressed at 50$0^{\circ}C$ was 8.2 kgf/${mm}^2$.

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Dense Thermal 3D Point Cloud Generation of Building Envelope by Drone-based Photogrammetry

  • Jo, Hyeon Jeong;Jang, Yeong Jae;Lee, Jae Wang;Oh, Jae Hong
    • 한국측량학회지
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    • 제39권2호
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    • pp.73-79
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    • 2021
  • Recently there are growing interests on the energy conservation and emission reduction. In the fields of architecture and civil engineering, the energy monitoring of structures is required to response the energy issues. In perspective of thermal monitoring, thermal images gains popularity for their rich visual information. With the rapid development of the drone platform, aerial thermal images acquired using drone can be used to monitor not only a part of structure, but wider coverage. In addition, the stereo photogrammetric process is expected to generate 3D point cloud with thermal information. However thermal images show very poor in resolution with narrow field of view that limit the use of drone-based thermal photogrammety. In the study, we aimed to generate 3D thermal point cloud using visible and thermal images. The visible images show high spatial resolution being able to generate precise and dense point clouds. Then we extract thermal information from thermal images to assign them onto the point clouds by precisely establishing photogrammetric collinearity between the point clouds and thermal images. From the experiment, we successfully generate dense 3D thermal point cloud showing 3D thermal distribution over the building structure.

원자층 증착 기술을 이용한 TiO2 활성층 기반 TFT 연구 (Study on the Thin-film Transistors Based on TiO2 Active-channel Using Atomic Layer Deposition Technique)

  • 김성진
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.415-418
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    • 2015
  • In this paper, $TiO_2$ based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. $TiO_2$ semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a $200{\mu}m$ channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V ~ 0 V), and a much higher on/off current ratio (<$10^5$), respectively.