• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1811-1819
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• 2013

In this paper, we carried out a study on how to find an appropriate helper node for cooperative communications, the role of which is very import to enhance system throughput of wireless communication system. The busy tone cooperative MAC (BT-COMAC) protocol proposed in this paper is a new cooperative MAC protocol with a reactive helper node scheme and maximizes the benefits of existing schemes while making up for their shortcomings. We conducted performance evaluation of this new protocol using computer simulation experiment. System throughput in bps and channel access delay are utilized as performance measures. We used a random way point mobility model where every communication node moves independently one another, and slow fading channel where every communication node decided its transmission rate with received power basis. Numerical results show that the new MAC protocol enhances system throughput as much as 15% of the existing scheme.

• Journal of KIISE:Information Networking
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• v.30 no.1
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• pp.9-16
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• 2003

In this paper, we propose a method for supporting VCR operations in a patching based multicast VOD system. Random access, pause and resume operations are supported in our system, and the channel and session scheduling algorithms for the VCR operations are proposed. When it is necessary to join a sharable multicast channel in the admission control for the VCR operations, the patching technique, which shares an on-going regular channel and allocates a new patching channel for the missing data, is used. Therefore, unlike the previous approach that allocates an excessive number of I-channels, service latency is minimized and channel usage is optimized in our system. Moreover buffered data. which is saved in disk during patching, is reused to prevent unnecessary patching channel allocation. For this. the patching management information is extended and a buffed data management scheme is proposed. In our system, the First-Come-First-Served scheduling is used to inform clients the service latency for the VCR operations immediately.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.7B
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• pp.647-659
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• 2003

LPM(Longest Prefix Matching)searching in If address lookup is a major bottleneck of IP packet processing in the high speed router. In the conventional lookup table for the LPM searching in CAM(Content Addressable Memory) the complexity of fast update take 0(1). In this paper, we designed pipeline architecture for fast update of 0(1) cycle of lookup table and high throughput and low area complexity on LPM searching. Lookup-table architecture was designed by CAM(Content Addressable Memory)away that uses 1bit RAM(Random Access Memory)cell. It has three pipeline stages. Its LPM searching rate is affected by both the number of key field blocks in stage 1 and stage 2, and distribution of matching Point. The RTL(Register Transistor Level) design is carried out using Verilog-HDL. The functional verification is thoroughly done at the gate level using 0.35${\mu}{\textrm}{m}$ CMOS SEC standard cell library.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.3
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• pp.604-611
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• 2017

In wireless sensor networks, an energy efficient operation is important since the energy of the sensors is limited. This paper proposes an energy efficient method that reduces a packet generation with Matrix Completion method where sensor value matrix has low-rank and decreases a collision rate and an overhead by transmitting only sensor ID to a time slot corresponding to the sensor value. Computer simulations demonstrates that the proposed method shows 17% of transmission failure and 73% of the packet generation compared to a conventional CSMA/CS. Delay time of transmitting information of the proposed method exhibits 22% of the CSMA/CA and the MSE error after reconstructing sensor values by Singular Value Thresholding(SVT) in Fusion Center is 87% of the CSMA/CA.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.289-294
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• 2014

In this paper, we investigate the user scheduling, transmit beamforming, and receive beamforming of uplink space division multiple access (SDMA) systems where multiple users are allowed to transmit their signal to a base station (BS) using the same frequency band simultaneously. The BS performs a receive beamforming using the predetermined pseudo-random pattern and select users with a specific criterion. Especially, in this paper, we propose the threshold-based transmit power control, in which a user decrease its transmit power according if its generating interference to other users's signal is larger than a predetermined threshold. Assuming that the TDD system is used, the channel state information (CSI) can be obtained at each user from pilot signals from the BS. Simulation results show that the proposed technique significantly outperforms the existing user scheduling algorithms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.115-115
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• 2007

PRAM (Phase Change Random Access Memory)은 상변화 물질의 비저항 차이를 이용한 메모리 소자로 차세대 비휘발성 메모리로 주목받고 있다. 현재 상변화 물질로 사용되고 있는 $Ge_2Sb_2Te_5$ 박막은 결정질 상태에서 저항이 낮아 RESET 동작에서 많은 전력이 소비되고 메모리의 고집적의 어려움이 있다. 이러한 문제를 해결하기 위해 상변화 물질의 개선과 소자 구조의 개선 등의 새로운 접근이 시도되고 있다. 본 연구에서는 $Ge_2Sb_2Te_5$ 박막의 전기적 특성을 개선하기 위해서 이종 원소인 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ 박막에 대한 특성을 살펴 보았다. $SiO_2$/Si 기판 위에 100 nm 두께의 박막을 D.C. magnetron sputter 방법으로 증착하여, 질소 분위기 $100^{\circ}C{\sim}300^{\circ}C$온도 구간에서 열처리하였다. 열처리에 따른 박막 특성을 관찰하기 위해 면저항 측정, XRD, TEM 분석을 통해 박막 특성을 관찰하였다. 면저항 측정과 XRD peak 분석을 통해 $Ge_2Sb_2Te_5$ 시스템에 비하여 N-doped $Ge_2Sb_2Te_5$ 시스템의 결정화 온도가 상승하였음을 확인하였다. 면저항은 첨가된 질소의 조성이 증가할수록 증가하였고, FCC 상에서 HCP 상으로의 상변화 온도 역시 증가하였다. 첨가된 질소가 $Ge_2Sb_2Te_5$, 박막의 결정 성장을 억제하였고, 상대적으로 높은 저항을 가지고 안정한 FCC상을 고온 열처리 이후에도 유지하였다. 질소 첨가를 이용한 상변화 물질의 열안정성 향상과 저소비전력 구동을 통해 향후 고집적 상변화 메모리에의 적용이 가능하다.