• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.80-80
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• 1998

RU02 박막은 전이금속으로서 rutile 구조이며, 넓은 온도 영역에서 금속성의 를 나타내고, 700도 이상의 높은 온도에서 열적 안정성을 갖는 물질이다 이러한 특성 때문 에 RU02 박막은 실리콘 디바이스에서 배선 게이트 전극 확산 장벽 등에 응용가능성이 높 은 물질로 각광을 받고 있다- 특히 다결정 RU02 박막은 DRAM (dynamic random access m memory) 내의 강유전성 축전기의 전극으로서 유망한 물질이다. 지금까지 이러한 응용분야에 사용된 전극물질은 pt 금속이었다 그러나 이러한 금속전극은 SI 산소 그리고 강유전체의 구성물질 등과의 상호확산, pt 표면의 hillock의 존재로 생기는 전기적 단락, 기판과의 나쁜 점작성, 어려운 에칭 프로세스 등의 단점을 가지고 있다 더욱 더 심각한 문제는 P Pt'ferroelectric/Pt 구조에서 나타나는 aging과 fatigue인데, 이는 108 사이쿨 이후에 스위칭 가 능한 잔류 pOlarization 으$\mid$ 감소를 유발하게 된다- 최근 Berstein은 Pt 대신에 RU02를 사용함으로써 강유전체 축전기에서의 fatigue 현상을 크게 감소시켰다고 보고 한 바 있다 Burst川도 RU02 가 실리콘 표면과 유전체 물질 사이에 전기전도 어떠한 상호 확산도 일어나지 않음을 보였다. 그러나 이러한 연구 결과에도 증착조건과 RU02 박악의 특성에 관한 상호 관계가 충분히 더욱 더 중은 강유전성 박막올 만들기 위해서는 이러한 박막 전극에 않고 있다 연구되지 대한 상세한 연구가 반드시 필요하다고 본다. RU02 박막은 실리콘 기판 위에 고주파 마그네트론 스퍼터링 방법으로 증착하였다. 사용 한 타켓은 2 인치의 직경을 가지는 CERAC 사에서 제작한 Ruol다 초기 진공은 1O~6 Torr 이하였고, 고주파 전력은 20 - 80W 까지 변화시켰다 반응성 스퍼터링율 하기 위해 아르곤과 산소롤 주입하였고, 산소/(산소+아르곤)의 비를 변화시켰다 기판의 온도와 증착압력은 각각 상온에 서 500도까지 , 5mTorr에 서 100mTorr 까지 변 화시 켰 다 RU02 박막의 결정성을 조사하기 위해 XRD 표면 형상과 단면을 조사하기 위해 SEM을 사용하였다‘ 박악의 비저항을 조사하기 위해 4-단자법 van der Pauw 방법을 사용하였다. RU02 박막은 증착압력이 높을수록 비저항은 높아지고, 두께는 감소하였다. 특히 1 100mTorr에서는 작업가스와 스퍼터된 입자사이의 심각한 산란 때문에 아예 증착이 이루어 지지 않았다‘ RF 전력이 증가할수록 비저항이 낮아졌다. 이는 두께에 의존하는 결과이며 전형적인 금속박막에서 나타나는 현상과 유사함을 알 수 있었다- 기판온도와 작업가스의 산소 분압이 높을수록 비저항이 감소하였다‘ 이러한 사실은 성장한 박악의 결정구조와 밀접한 관련이 있음을 보여준다.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2000.11a
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• pp.463-470
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• 2000

In this paper, we describe a wireless MAC protocol named APRMA(Abitrary Period Reservation Multiple Access), which is capable of supporting the ABR type data service and maximizing channel utilization. In original PRMA protocol, data terminals with random data packets cannot reserve slot. That is, slot reservation is applicable to the. time constraint voice packet exclusively. But the reservation scheme have to be performed for loss sensitive data packet, so data packets can get their quality of service. The aspects of service, if fixed bandwidth is allocated to data terminals, time constraint voice packets may have a low efficiency So in this study, the terminal which wants to request for ABR type service, acquires a minimum bandwidth from system for the first time. If the system have extra available bandwidth, ABR terminals would acquire additional bandwidth slot by slot. As a result, APRMA protocol can support the data service with loss sensitivity and maintain their channel utilization highly. Also high Priority services like voice can be satisfied with their QoS by APRMA.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.56-56
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• 2011

투명 메모리 소자는 향후 투명 디스플레이 등 투명 전자기기와 집적화해 통합형 투명 전자시스템을 구현을 위해 지속적으로 연구가 진행 되고 있으며, 산학계에서는 다양한 메모리 소자중 큰 밴드-갭(>3 eV) 특성을 가지는 저항 변화 메모리(Resistive Random Access Memory, ReRAM)를 이용한 투명 메모리 구현 가능성을 지속적으로 보고하고 있다. 현재까지의 저항 변화 메모리 연구는 물질 최적화를 위해 다양한 금속-산화물계(Metal-Oxide) 저항 변화 물질에 대한 연구가 활발하게 진행 되고 있지만, 금속-산화물계 물질의 경우 근본 적으로 그 제조 공정상 산소에 의한 다수의 산소 디펙트 형성과 제작 시 쉽게 발생할 수 있는 표면 오염의 문제점을 안고 있으며, 또한 Endurance 및 Retention 등의 신뢰성에 문제를 보이고 있다. 따라서, 이러한 문제점을 근본 적으로 해결하기 위해 새로운 저항 변화 물질에 관한 물질 최적화 연구가 요구 되며, 본 연구진은 다양한 금속-질화물계(Metal-Nitride) 물질을 저항변화 물질로 제안해 연구를 진행 하고 있다. 이전 연구에서, 물질 고유의 우수한 열전도(285 W/($m{\cdot}K$)) 및 절연 특성, 큰 밴드-갭(6.2 eV), 높은 유전율(9)을 가지고 있는 금속-질화물계 박막인 AlN를 저항변화 물질로 이용하여 저항변화 메모리 소자 연구를 진행하였으며, 저전압 고속 동작 특성을 보이는 신뢰성 있는 저항 변화 메모리를 구현하였다. 본 연구에서는 AlN의 큰 밴드-갭 특성을 이용하여 투명 메모리 소자를 구현하기 위한 연구를 진행 하였다. 투과도 실험 결과, 가시광 영역 (380-700 nm)에서 80% 이상의 투과도를 보였으며, 이는 투명 메모리 소자로써의 충분한 가능성을 보여 준다. 또한, I-V 실험에서 전형적인 bipolar 스위칭 특성을 보이며, 스위칭 전압 및 속도는 VSET=3 V/Time=10 ns, VRESET=-2 V/Time=10ns에서 가능하였다. 신뢰성 실험에서, 108번의 endurance 특성 및 105 초의 retention 특성을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.353-353
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• 2011

Titanium dioxide is a suitable material for industrial use at present and in the future because titanium dioxide has efficient photoactivity, good stability and low cost [1]. Among the three phases (anatase, rutile, brookite) of titanium dioxide, the anatase form is particularly photocatalytically active under ultraviolet (UV) light. In fabrication of photocatalytic devices based on catalytic nanodiodes [2], it is challenging to obtain a photocatalytically active TiO2 thin film that can be prepared at low temperature (< 200$^{\circ}C$). Here, we present the synthesis of a titanium dioxide film using TiO2 nanoparticles and sol-gel methods. Titanium tetra-isopropoxide was used as the precursor and alcohol as the solvent. Titanium dioxide thin films were made using spin coating. The change of atomic structure was monitored after heating the thin film at 200$^{\circ}C$ and at 350$^{\circ}C$. The prepared samples have been characterized by X-ray diffraction (XRD), scanning electron microcopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ultraviolet-visible spectroscopy (UV-vis), and ellipsometry. XRD spectra show an anatase phase at low temperature, 200$^{\circ}C$. UV-vis confirms the anatase phase band gap energy (3.2 eV) when using the photocatalyst. TEM images reveal crystallization of the titanium dioxide at 200$^{\circ}C$. We will discuss the switching behavior of the Pt /sol-gel TiO2 /Pt layers that can be a new type of resistive random-access memory.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.4 no.6
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• pp.1098-1115
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• 2010

An inseparable challenge associated with every random access network is the design of an efficient Collision Resolution Algorithm (CRA), since collisions cannot be completely avoided in such network. To maximize the collision resolution efficiency of a popular CRA, namely Binary Exponential Backoff (BEB), we propose a reactive backoff algorithm. The proposed backoff algorithm is reactive in the sense that it updates the contention window based on the previously selected backoff value in the failed contention stage to avoid a typical type of collision, referred as cross-collision. Cross-collision would occur if the contention slot pointed by the currently selected backoff value appeared to be present in the overlapped portion of the adjacent (the previous and the current) windows. The proposed reactive algorithm contributes to significant performance improvements in the network since it offers a supplementary feature of Cross Collision Exclusion (XCE) and also retains the legacy collision mitigation features. We formulate a Markovian model to emulate the characteristics of the proposed algorithm. Based on the solution of the model, we then estimate the throughput and delay performances of WLAN following the signaling mechanisms of the Distributed Coordination Function (DCF) considering IEEE 802.11b system parameters. We validate the accuracy of the analytical performance estimation framework by comparing the analytically obtained results with the results that we obtain from the simulation experiments performed in ns-2. Through the rigorous analysis, based on the validated model, we show that the proposed reactive cross collision exclusionary backoff algorithm significantly enhances the throughput and reduces the average packet delay in the network.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.11
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• pp.5400-5418
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• 2016

Femtocells are envisioned as a key solution to embrace the ever-increasing high data rate and thus are extensively deployed. However, the dense and random deployments of femtocell access points (FAPs) induce severe intercell inference that in turn may degrade the performance of spectral efficiency. Hence, unrestrained proliferation of FAPs may not acquire a net throughput gain. Besides, given that numerous FAPs deployed in ultra-dense networks (UDNs) lead to significant energy consumption, the amount of FAPs deployed is worthy of more considerations. Nevertheless, little existing works present an analytical result regarding the optimal FAP density for a given User Equipment (UE) density. This paper explores the realistic scenario of randomly distributed FAPs in UDN and derives the coverage probability via Stochastic Geometry. From the analytical results, coverage probability is strictly increasing as the FAP-to-UE ratio increases, yet the growing rate of coverage probability decreases as the ratio grows. Therefore, we can consider a specific FAP-to-UE ratio as the point where further increasing the ratio is not cost-effective with regards to the requirements of communication systems. To reach the optimal FAP density, we can deploy FAPs in line with peak traffic and randomly switch off FAPs to keep the optimal ratio during off-peak hours. Furthermore, considering the unbalanced nature of traffic demands in the temporal and spatial domain, dynamically and carefully choosing the locations of active FAPs would provide advantages over randomization. Besides, with a huge FAP density in UDN, we have more potential choices for the locations of active FAPs and this adds to the demand for a strategic sleeping policy.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.8 no.6
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• pp.1881-1900
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• 2014

Since 802.11 wireless LANs are so widely used, it has become common for numerous access points (APs) to overlap in a region, where most of those APs are managed individually without any coordinated control. This pattern of wireless LAN usage is called the private OBSS (Overlapping Basic Service Set) environment in this paper. Due to frame collisions across BSSs, each BSS in the private OBSS environment suffers severe performance degradation. This study approaches the problem from the perspective of congestion control rather than noise or collision resolution. The retry limit, one of the 802.11 attributes, could be used for traffic control in conjunction with TCP. Reducing the retry limit causes early discard of a frame, and it has a similar effect of random early drops at a router, well known in the research area of congestion control. It makes the shared link less crowded with frames, and then the benefit of fewer collisions surpasses the penalty of less strict error recovery. As a result, the network-wide performance improves and so does the performance of each BSS eventually. Reducing the retry limit also has positive effects of merging TCP ACKs and reducing HOL-like blocking time at the AP. Extensive experiments have validated the idea that in the OBSS environment, reducing the retry limit provides better performance, which is contrary to the common wisdom. Since our strategy is basically to sacrifice error recovery for congestion control, it could yield side-effects in an environment where the cost of error recovery is high. Therefore, to be useful in general network and traffic environments, adaptability is required. To prove the feasibility of the adaptive scheme, a simple method to dynamically adjust the value of the retry limit has been proposed. Experiments have shown that this approach could provide comparable performance in unfriendly environments.

• Journal of Broadcast Engineering
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• v.22 no.3
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• pp.381-396
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• 2017

In this paper, the perceptual rate control algorithm is studied for HEVC (High Efficiency Video Coding) encoder with bit allocation based on perceived visual quality. This paper proposes perceptual rate control algorithm which could consider perceived quality for HEVC encoding method. The proposed rate control algorithm employs adaptive bit allocation for frame and CTU level using the perceived visual importance of each CTU. For performance evaluation of the proposed algorithm, the proposed algorithm was implemented on HM 16.9 and tested for sequences in Class B under the CTC (Common Test Condition) RA (Random Access) case. Experimental results show that the proposed method reduces the bitrate of 3.12%, and improves BD-PSNR of 0.08dB and bitrate accuracy of 0.07% on average. And also, we achieved MOS improvement of 0.16 with the proposed method, compared with the conventional method based on DSCQS (Double Stimulus Continuous Quality Scale).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.3B
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• pp.462-473
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• 2010

The RFID system has the security problem of location tracking and user privacy. In order to solve this problem, the cryptographic access method using hash function is difficult to in real applications. Because there is a limit of computing and storage capacity of Tag, but the safety is proved. The lightweight authentication methods like HB and LMAP guarantee the high efficiency, but the safety is not enough to use. In this paper, we use the AES for RFID Authentication, and solve the problem of using fixed key with key change step by step. The symmetric keys of the tag and server are changed by the random number generated by tag, reader and server successively. This could prevent the key exposure. As a result, the output of the tag and reader always changes. These key changes could make it possible to prevent eavesdropping, replay attack, location tracking and spoofing.