• Korean Journal of Materials Research
• /
• v.20 no.4
• /
• pp.199-203
• /
• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• Korean Journal of Materials Research
• /
• v.23 no.9
• /
• pp.537-542
• /
• 2013

Two types of Tb- and Na-substituted green phosphors $Ca_{(1-1.5x)}WO_4:Tb_x^{3+}$: and $Ca_{(1-2x)}WO_4:Tb_x^{3+},Na_x^+$ were synthesized with various x values, using a solid-state reaction. The former phosphors contained both substitutional and vacancy point defects, while the later had only substitutional defects. X-ray diffraction results showed that the main diffraction peak, (112), was centered at $2{\theta}=28.72^{\circ}$ and indicated that there was no basic structural deformation caused by substitutions or vacancies. The photoluminescence emission and photoluminescence excitation spectra revealed the optical properties of trivalent terbium ions, $Tb^{3+}$. Typical transitions, $^5D_3{\rightarrow}^7F_6,\;^7F_5,\;^7F_4$ and $^5D_4{\rightarrow}^7F_6,\;^7F_5,\;^7F_4,\;^7F_3$, and cross relaxations were observed. Subtle differences in the photoluminescence of green phosphors were observed as a result of the point defects. The FT-IR spectra indicated that some of the ungerade vibrational modes had shifted positions and changed shapes, spreading out over a wide range of frequencies. This change can be attributed to the different masses of $Tb^{3+}$ and $Na^+$ ions and $V_{Ca}$" vacancies compared to $Ca^{2+}$ ions. The gerade normal modes of the Raman spectra exhibited subtle differences resulting from point defects in $Ca_{(1-1.5x)}Tb_xWO_4$ and $Ca_{(1-2x)}Tb_xNa_xWO_4$.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.214-220
• /
• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

• Korean Journal of Materials Research
• /
• v.21 no.2
• /
• pp.78-82
• /
• 2011

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.298-302
• /
• 2011

This study developed a pigment by doping Cr to Pyrochlore-type stannate crystals and investigated the chromogenic relationship in a glaze. Crystal phases of the pigment according to firing temperatures were analyzed by XRD, and the doping relationship was analyzed by Raman Spectroscopy. Color and reflection rate of the pigment were measured by UV-vis Spectrophotometer. Consequently, stannate characteristic band appeared at 307, 408, 505 and $755cm^{-1}$ until 0.1 mole substitution of $Cr_2O_3$. However, as amount of $Cr_2O_3$ increased, the stannate characteristic peak was decreased and shift happened at the left hand side due to Cr-dope. In composition of 0.12~0.14 mole substituted, the unreacted $Cr_2O_3$ stannate characteristic peak, which was not engaged, was shown. This result shows the maximum limit of solid solution was 0.1 mole $Cr_2O_3$. The color of the glaze, which was produced by adding 6 wt% of $Y_2Sn_{1.94}Cr_{0.06}O_7$ pigment in a lime or a lime-magnesia glaze and fired the mixture at $1260^{\circ}C$, was grayish pink with $L^*$ 70.29, $a^*$ 5.68 and $b^*$ 6.27. It showed gray with $L^*$ 68.82, $a^*$ 3.07and $b^*$ 8.13 for $Y_2Sn_{1.9}Cr_{0.1}O_7$.

• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.122-127
• /
• 2007

In this research, amophous carbon films (a-C, a-C:H, a-C:N) were synthesized by closed-field unbalanced magnetron (CFUBM) sputtering using graphite target. We also fabricated amorphous carbon films with applying negative DC bias voltage of 200 V in during the deposition in working pressure. Also, a-C:H and a-C:N films was synthesized by adding acethylene($C_{2}H_{2}$) and nitrogen(N) gases of 4 and 3 sccm into Ar pressure. The a-C:H film synthesized at -200 V exhibited the maxumum hardness of 26.3 GPa, the smooth surface of 0.1 nm and the good adhesion of 30.5 N. And a-C:N film synthesized at -200 V exhibited at -200 V exhibited the best adhesion of 32 N. This paper examined the effect of $C_{2}H_{2}$ gas, $N_{2}$ gas and negative DC bias voltage as the parameter for improving the physical properties and the relation between structral and physical properties of carbon films.

• Solar Energy
• /
• v.17 no.2
• /
• pp.55-66
• /
• 1997

The structural and optoelectronic properties of polycrystalline CdS films up to several microns in thickness, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. All films were deposited on an indium tin oxide on glass substrate. The three methods are: 1) alternated spraying of cation and anion solution at room temperature; 2) spray pyrolysis with substrate temperature up to $500^{\circ}C$; 3) chemical bath deposition (CBD). Deposited films were thermally treated in various ways. All films showed a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions <0.5 microns. Annealing at $400^{\circ}C$ increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from $400^{\circ}C\;to\;500^{\cir\c}C$ were oriented in the <002> direction. For growth by pyrolysis at $500^{\circ}C$, the surface is rough on a lateral scale of 0.1 to 0.3 microns. The optical band gap and defect states are investigated by optical absorption, photoluminescene, Raman, and photothermal deflection spectroscopies.

• Polymer(Korea)
• /
• v.34 no.2
• /
• pp.150-153
• /
• 2010

In this research, biomolecule-immobilized multi-walled carbon nanotubes (MWCNTs) were prepared by using radiation-induced graft polymerization. For the immobilization of biomolecules, the surface of MWNCTs was functionalized by radiation-induced graft polymerization of acrylic acid. Based on the results of TGA and Raman spectroscopy it was found that acrylic acid was effectively graft-polymerized on the MWCNTs. Biomolecules such as DNA and proteins were immobilized onto the resultant poly(acrylic acid)-grafted MWCNTs. The results of the X-ray photoelectron spectroscopy and fluorescence microscopy confirmed that the biomoelcules were successfully immobilized on the poly(acrylic acid)-grafted MWCNTs.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.123-123
• /
• 2003

탄소나노튜브는 지금까지의 많은 연구를 통해 다양한 분야에 대한 응용 가능성이 확인되었으며, 그 중에서도 특히 탄소나노튜브를 이용한 전계방출표시소자(carbon nanotube field emission display, CNT-FED)는 상용화를 눈앞에 두고 있는 상황이다. 본 연구에서는 탄소나 노튜브를 합성할 수 있는 여러 가지 방법 중에서 열화학기상증착법(thermal chemical vapor deposition, thermal CVD)을 이용하여 유리기판 위에 탄소나노튜브를 합성하였다. Electron beam evaporation으로 유리기판 위에 전극층으로 Cr을 150nm를 증착하고 연속하여 촉매층인 Invar(Fe-53%Ni-6%Co 합금)를 10nm의 두께로 형성하였다. 사진식각으로 Cr층을 line 패턴한 후 Cr line 내의 Invar층을 line 및 dot 패턴하였다. 나노튜브 합성을 위해 480-58$0^{\circ}C$까지 진공분위기 또는 질소 분위기에서 20분간 승온한 후 CO(150sccm)와 H$_2$(1200sccm)를 주입하여 20분간 성장시키고 질소 분위기에서 냉각시켰다. 성장된 탄소나노튜브는 SEM, TEM, Raman spectroscopy 등을 통하여 구조 및 형상분석을 하였다. 진공승온의 경우 탄소불순물인 a-C이 많은 양 증착 되었으며 탄소나노튜브는 온도에 따라 1-5$\mu\textrm{m}$의 두께로 성장하였으나, 질소분위기 승온의 경우는 a-C이 거의 증착되지 않았으며 나노튜브의 두께가 10-20$\mu\textrm{m}$였다. 본 연구에서는 diode구조를 갖는 탄소나노튜브 에미터의 수명예측을 위해 여러 가지 가속측정조건에서 전계방출 특성을 연구하였다. Anode와 cathode 간의 간격을 400$\mu\textrm{m}$로 유지한 diode 구조에 대해 $10^{-6}$ torr 이하의 진공에서 전계방출을 측정하였다. 100 line의 에미터를 60Hz의 주파수에서 1/100 duty로 구동하였으며, duty비 증가에 따라 pulse의 on-time을 고정하고 frequency를 변화시켰다. dc까지 duty비가 증가됨에 따라 방출전류의 양이 선형적으로 증가하였다. 전압을 일정하게 고정시키고 각 duty비에서 시간에 따라 방출전류를 측정한 결과 duty비가 높을수록 방출전류가 시간에 따라 급격히 감소하였다. 각 duty비에서 방출전류의 양이 1/2로 감소하는 시점을 에미터의 수명으로 볼 때 duty비 대 에미터 수명관계를 구해 높은 duty비에서 전계방출을 시킴으로써 실제의 구동조건인 낮은 duty비에서의 수명을 단시간에 예측할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.136-136
• /
• 2003

카본나노튜브는 상용되는 기존의 센서에 비해 표면적이 넓어 감도가 놀고 응답속도가 빠르다. 또한 나노 스케일의 크기를 가지므로 고직접화를 실현할 수 있으며 기능복구성이 뛰어나 상온동작을 통한 저전력화가 가능하다. 본 실험에서는 아크방전법으로 합성한 카본나노튜브를 가스센서로 제작하여 상온에서 NH$_3$, NO 가스와의 반응 특성을 평가하였다. 또한 origin soot와 이를 정제한 purified CNT를 SEM(주사전자현미경), TEM(투과전자현미경), Raman scattering spectroscopy(라만 산란 분광기)를 통해 재료적 특성을 조사하고 이를 가스 감응 곡선과 연관하여 비교, 분석하였다. 전극에 CNT막을 형성시키기 위해 3g의 N,N dimethylformamide 용액에 CNT 10mg을 분산시킨 후 2시간동안 초음파 처리하였다. 이 용액을 mask를 이용해 전극 위에 막을 형성시킨 후 20$0^{\circ}C$에서 열처리하였다. 이렇게 제조된 origin soot와 purified CNT센서는 flow system을 이용하여 측정하였고 $N_2$분위기 하에서 센서를 안정화시킨 후 측정가스와의 반응을 살펴보았다 센서의 반응속도, 회복속도, 감도 등의 측정결과 origin soot는 NH$_3$ 25ppm에서 20%, purified CNT는 1%의 감도를 보여 20배 높은 감도를 보았다. NO 25ppm의 경우에도 origin soot가 8%, purified CNT는 0.8%의 감도를 보여 10배 높은 감도를 보였다. 이는 탄소입자가 많은 origin soot가 purified CNT 보다 표면적이 넓어 보다 많은 가스 흡착 싸이트를 가지기 때문이다. 하지만 origin soot는 반응시간과 회복속도가 Purified CNT 보다 2배 이상 느려 표면적 증가에 따른 가스 흡착과 탈착 능력이 떨어짐을 알 수 있었다. 또한 CNT와 가스사이의 전하 이동 방향에 따라 NH$_3$는 양의 감도를 NO는 음의 감도를 보였다 이는 전하의 이동 방향에 따라 전하와 캐리어 사이의 결합 및 해리가 일어나게 되고 결국 카본나노튜브 내의 캐리어 수를 증감시킴에 따라 나타나는 현상이다. 이러한 가스의 감도는 농도에 따라 증가하였으며 origin soot를 이용하여 1ppm이하의 NH$_3$ 가스를 검출할 수 있었다.