• Journal of Welding and Joining
• /
• 제21권4호
• /
• pp.46-55
• /
• 2003

TiO$_2$-WO$_3$(8.2wt%) coatings were prepared by the APS (Atmospheric Plasma Spraying) process to clarify the relationship between the process parameters(H$_2$ gas flow rate of plasma 2nd gas and spraying distance) of the APS coating and photo-decomposition efficiency kinetics of the MB(methylene blue) aqueous solution decomposition and to understand the effect of addition of WO$_3$ on photocatalytic properties of TiO$_2$ sprayed coating. Further, the temperature and velocity of flying particles were measured by DPV-2000 to investigate the relationship between microstructure of coatings and process parameters. Properties of coatins were investigated by XRD, SEM, XPS, RAMAN, UV/VIS spectrometer. In case of the TiO$_2$-WO$_3$(8.2wt%) coating, it had a lower anatase fraction than that of pure-TiO$_2$ coatings because of flying in the higher temperature plasma plume by the heavy weight of TiO$_2$, WO$_3$. And, when WO$_3$ added powders were spayed, the doping effects of W ions substituted into the Ti ion sites was not occured during melting and solidification cycles of spraying. It was found that the addition of WO$_3$ was ineffective effective on increasing photo-decomposition efficiency of TiO$_2$ sprayed coating.

• 한국재료학회지
• /
• 제10권9호
• /
• pp.648-655
• /
• 2000

다이아몬드 합성 조건에서 질소 첨가량은 0%에서 95%까지 변화하였을 때의 합성 거동을 조사하였다. 질소 첨가량이 증가함에 따라 합성된 상은 {100} 성장면으로 이루어진 다이아몬드 막에서 고유의 결정면이 사라지고 나조 크기의 결정들로 이루어진 다이아몬 막으로 변화하였다. 심지어 수소가 없어 메탄과 질소만의 경우에서도 다이아몬드 막 합성이 가능함을 보여주었다. 또한 다이아몬드 구조를 갖는 개별적 입자의 형태는 30%∼80% 질소 첨가범위에서 정팔면체의 결정모양을 가졌고, 이 범위에서 기판온도가 증가함에 따라 육방정 모양의 새로운 결정상을 관찰하였다. 다이아몬드 막의 경우 질소, 첨가량에 무관하게 질소 혼입향은 측정되지 않을 만큼 적었지만, 육방정 결정상은 Si, C 그리고 N으로 이루어진 SiCN화합물임을 확인하였다.

• 한국재료학회지
• /
• 제10권3호
• /
• pp.241-245
• /
• 2000

고온에서 증발된 금속 갈륨 (Ga)을 암모니아 ($NH_3$) 기체와 직접 반응시켜 사파이어 (${\alpha}-Al_2O_3$) 기판 위에 GaN 후막을 성장하였다. 성장된 GaN는 주로 [0002] 방향으로 성장하였으나 낮은 성장온도에서는 [1011] 방향의 성장이 관찰되었으며 V-형태를 가진 매우 거친 표면을 보였다. 그러나 성장온도가 증가하면 [1010]와 [1011] 방향으로 성장이 관찰되었으며 피라미드면을 가진 육방정 결정이 성장되었다. 성장된 GaN의 두께는 온도가 증가할수록 증가하였으나, $1270^{\circ}C$의 고온에서는 열분해를 일으켜 두께가 감소하였다. 공급된 $NH_3$의 유량이 증가할수록 GaN의 결정성과 광특성은 향상되었다. X-선 회절기 (X-ray diffraction)와 광루미네센스(photoluminescence) 분석결과로 GaN 후막이 (1010) 면으로 성장되면 황색발광이 증가됨을 관찰할 수 있었다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.25.1-25.1
• /
• 2011

Over the past few decades, metallic nanoparticles (NPs) have been of great interest due to their unique mesoscopic properties which distinguish them from those of bulk metals; such as lowered melting points, greater versatility that allows for more ease of processability, and tunable optical and mechanical properties. Due to these unique properties, potential opportunities are seen for applications that incorporate nanomaterials into optical and electronic devices. Specifically, the development of metallic NPs has gained significant interest within the electronics field and technological community as a whole. In this study, gold (Au) pads for surface finish in electronic package were developed by inkjet printing of Au NPs. The microstructures of inkjet-printed Au film were investigated by various thermal treatment conditions. The film showed the grain growth as well as bonding between NPs. The film became denser with pore elimination when NPs were sintered under gas flows of $N_2$-bubbled through formic acid ($FA/N_2$) and $N_2$, which resulted in improvement of electrical conductance. The resistivity of film was 4.79 ${\mu}{\Omega}$-cm, about twice of bulk value. From organic anlayses of FTIR, Raman spectroscopy, and TGA, the amount of organic residue in the film was 0.43% which meant considerable removal of the solvent or organic capping molecules. The solder ball shear test was adopted for solderability and shear strength value was 820 gf (1 gf=9.81 mN) on average. This shear strength is good enough to substitute the inkjet-printed Au nanoparticulate film for electroplating in electronic package.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.29.1-29.1
• /
• 2011

The selective catalytic reduction (SCR) of $MnO_x$ with $NH_3$ is an effective method for the removal of $MnO_x$ from stationary system. The typical catalyst for this method is $V_2O_5-WO_3(MoO_3)/TiO_2$, caused by the high activity and stability. However, This catalyst is active within $300{\sim}400^{\circ}C$ and occurs the pore plugging from the deposition of ammonium sulfate salts on the catalysts surface. It needs to locate the SCR unit after the desulfurizer and electrostatic precipitator without reheating of the flue gas as well as deposition of dust on the catalyst. The manganese oxides supported on titania catalysts have attracted interest because of its high SCR activity at low temperature. The catalytic activity of $MnO_x/TiO_2$ SCR catalyst with different manganese precursors have investigated for low-temperature SCR in terms of structural, morphological, and physico-chemical analyses. The $MnO_x/TiO_2$ were prepared from three different precursors such as manganese nitrate, manganese acetate (II), and manganese acetate (III) by the sol-gel method and then it calcinated at $500^{\circ}C$ for 2 hr. The structural analysis was carried out to identify the phase transition and the change intensity of catalytic activity by various manganese precursors was analyzed by FT-IR and Raman spectroscopy. These different precursors also led to various surface Mn concentrations indicated by SEM. The Mn acetate (III) tends to be more suppressive the crystalline phase (rutile), and it has not only smaller particle size, but also better distributed than the others. It was confirmed that the catalytic activity of MA (III)-$MnO_x/TiO_2$ was the highest among them.

• 한국재료학회지
• /
• 제19권10호
• /
• pp.544-549
• /
• 2009

Activated carbon (AC) with very large surface area has high capacitance per weight. However, such activation methods tend to suffer from low yields, below 50%, and are low in electrode density and capacitance per volume. Carbon NanoFibers (CNFs) had high surface area polarizability, high electrical conductivity and chemical stability, as well as extremely high mechanical strength and modulus, which make them an important material for electrochemical capacitors. The electrochemical properties of immobilized CNF electrodes were studied for use as in electrical double layer capacitor (EDLC) applications. Immobilized CNFs on Ni foam grown by thermal chemical vapor deposition (CVD) were successfully fabricated. CNFs had a uniform diameter range from 50 to 60 nm. Surface area was 56 m$^2$/g. CNF electrodes were compared with AC and multi wall carbon nanotube (MWNT) electrodes. The electrochemical performance of the various electrodes was examined with aqueous electrolyte of 2M KOH. Equivalent series resistance (ESR) of the CNF electrodes was lower than that of AC and MWNT electrodes. The specific capacitance of 47.5 F/g of the CNF electrodes was achieved with discharge current density of 1 mA/cm$^2$.

• 한국재료학회지
• /
• 제20권4호
• /
• pp.199-203
• /
• 2010

Hybridization of semiconductor materials with carbon nanotubes (CNTs) is a recent field of interest in which new nanodevice fabrication and applications are expected. In this work, nanowire type GaAs structures are synthesized on porous single-wall carbon nanotubes (SWCNTs) as templates using the molecular beam epitaxy (MBE) technique. The field emission properties of the as-synthesized products were investigated to suggest their potential applications as cold electron sources, as well. The SWCNT template was synthesized by the arc-discharge method. SWCNT samples were heat-treated at $400^{\circ}C$ under an $N_2/O_2$ atmosphere to remove amorphous carbon. After heat treatment, GaAs was grown on the SWCNT template. The growth conditions of the GaAs in the MBE system were set by changing the growth temperatures from $400^{\circ}C$ to $600^{\circ}C$. The morphology of the GaAs synthesized on the SWCNTs strongly depends on the substrate temperature. Namely, nano-crystalline beads of GaAs are formed on the CNTs under $500^{\circ}C$, while nanowire structures begin to form on the beads above $600^{\circ}C$. The crystal qualities of GaAs and SWCNT were examined by X-ray diffraction and Raman spectra. The field emission properties of the synthesized GaAs nanowires were also investigated and a low turn-on field of $2.0\;V/{\mu}m$ was achieved. But, the turn-on field was increased in the second and third measurements. It is thought that arsenic atoms were evaporated during the measurement of the field emission.

• 한국재료학회지
• /
• 제23권9호
• /
• pp.537-542
• /
• 2013

Two types of Tb- and Na-substituted green phosphors $Ca_{(1-1.5x)}WO_4:Tb_x^{3+}$: and $Ca_{(1-2x)}WO_4:Tb_x^{3+},Na_x^+$ were synthesized with various x values, using a solid-state reaction. The former phosphors contained both substitutional and vacancy point defects, while the later had only substitutional defects. X-ray diffraction results showed that the main diffraction peak, (112), was centered at $2{\theta}=28.72^{\circ}$ and indicated that there was no basic structural deformation caused by substitutions or vacancies. The photoluminescence emission and photoluminescence excitation spectra revealed the optical properties of trivalent terbium ions, $Tb^{3+}$. Typical transitions, $^5D_3{\rightarrow}^7F_6,\;^7F_5,\;^7F_4$ and $^5D_4{\rightarrow}^7F_6,\;^7F_5,\;^7F_4,\;^7F_3$, and cross relaxations were observed. Subtle differences in the photoluminescence of green phosphors were observed as a result of the point defects. The FT-IR spectra indicated that some of the ungerade vibrational modes had shifted positions and changed shapes, spreading out over a wide range of frequencies. This change can be attributed to the different masses of $Tb^{3+}$ and $Na^+$ ions and $V_{Ca}$" vacancies compared to $Ca^{2+}$ ions. The gerade normal modes of the Raman spectra exhibited subtle differences resulting from point defects in $Ca_{(1-1.5x)}Tb_xWO_4$ and $Ca_{(1-2x)}Tb_xNa_xWO_4$.

• 한국재료학회지
• /
• 제28권4호
• /
• pp.214-220
• /
• 2018

We report on the fabrication and photoelectrochemical(PEC) properties of a $Cu_2O$ thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in $Cu_2O$ thin film as an efficient photoelectrode for solar-driven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/ZnO$ p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/ZnO$ photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., $0.77mA/cm^2$ at 0.5 V vs $Hg/HgCl_2$ in a $1mM\;Na_2SO_4$ electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs $Hg/HgCl_2$, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

• 한국재료학회지
• /
• 제21권2호
• /
• pp.78-82
• /
• 2011

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.